Organic thin-film transistor and method for manufacturing same

Patent metadata

Field	Value
Publication number	US-2016372662-A1
Application number	US-201615252898-A
Country	US
Kind code	A1
Filing date	Aug 31, 2016
Priority date	Mar 3, 2014
Publication date	Dec 22, 2016
Grant date	—

Abstract

An organic thin-film transistor including: a gate electrode, an organic semiconductor layer, a gate insulating layer, a source electrode, and a drain electrode on a substrate, in which the organic semiconductor layer includes an organic semiconductor and a resin (C) having one or more groups selected from the group consisting of a group having fluorine atoms, a group having silicon atoms, an alkyl group having one or more carbon atoms or having two or more carbon atoms in a case of forming an alkoxycarbonyl group, a cycloalkyl group, an aralkyl group, an aryloxycarbonyl group, an aromatic ring group substituted with at least one alkyl group, and an aromatic ring group substituted with at least one cycloalkyl group; and a method for manufacturing an organic thin-film transistor including: applying a coating solution which contains the organic semiconductor and the resin (C) and causing the resin (C) to be unevenly distributed.

First claim

What is claimed is:

1 . An organic thin-film transistor comprising, on a substrate:
a gate electrode; an organic semiconductor layer; a gate insulating layer provided between the gate electrode and the organic semiconductor layer; and a source electrode and a drain electrode provided in contact with the organic semiconductor layer and connected to each other through the organic semiconductor layer, wherein the organic semiconductor layer includes an organic semiconductor and a resin (C) having one or more groups selected from the group consisting of a group having fluorine atoms, a group having silicon atoms, an alkyl group having one or more carbon atoms or having two or more carbon atoms in a case of forming an alkoxycarbonyl group, a cycloalkyl group, an aralkyl group, an aryloxycarbonyl group, an aromatic ring group substituted with at least one alkyl group, and an aromatic ring group substituted with at least one cycloalkyl group.

2 . The organic thin-film transistor according to claim 1 , wherein the resin (C) has a repeating unit represented by any one of the following Formulae (C-Ia) to (C-Id),

in the formula, R 10 and R 11 represent a hydrogen atom, a fluorine atom, or an alkyl group,
W 3 represents an organic group having one or more groups selected from the group consisting of a group having fluorine atoms, a group having silicon atoms, an alkyl group having two or more carbon atoms, a cycloalkyl group, an aryl group, and an aralkyl group,
W 4 represents an organic group having one or more groups selected from the group consisting of a fluorine atom, a group having fluorine atoms, a group having silicon atoms, an alkyl group, and a cycloalkyl group,
W 5 and W 6 represent an organic group having one or more groups selected from the group consisting of a group having fluorine atoms, a group having silicon atoms, an alkyl group, a cycloalkyl group, an aryl group, and an aralkyl group,
Ar 11 represents an (r+1)-valent aromatic ring group, and
r represents an integer of 1 to 10.

3 . The organic thin-film transistor according to claim 1 , wherein the resin (C) has at least one of a group having fluorine atoms or a group having silicon atoms.

4 . The organic thin-film transistor according to claim 1 ,
wherein the organic semiconductor is unevenly distributed on the gate insulating layer side, and the resin (C) is unevenly distributed on the opposite side to the gate insulating layer.

5 . The organic thin-film transistor according to claim 1 ,
wherein the organic semiconductor is phase-separated on the gate insulating layer side, and the resin (C) is phase-separated on the opposite side to the gate insulating layer.

6 . The organic thin-film transistor according to claim 1 , wherein the surface energy of the resin (C) is 30 mNm −1 or less.

7 . The organic thin-film transistor according to claim 1 , wherein the organic thin-film transistor is a bottom-gate type OTFT.

8 . The organic thin-film transistor according to claim 7 , wherein the organic thin-film transistor is a bottom-contact type OTFT.

9 . The organic thin-film transistor according to claim 1 , wherein the organic semiconductor is a low molecular weight compound.

10 . The organic thin-film transistor according to claim 1 , wherein the organic semiconductor is a condensed polycyclic aromatic compound.

11 . The organic thin-film transistor according to claim 1 , wherein the organic semiconductor is a compound represented by any one of the following Formulae (C) to (T),

in Formula (C), A C1 and A C2 represent an oxygen atom, a sulfur atom, or a selenium atom, R C1 to R C6 represent a hydrogen atom or a substituent, and at least one of R C1 , . . . , or R C6 represents a substituent represented by the following Formula (W), in Formula (D), X D1 and X D2 represent NR D9 , an oxygen atom, or a sulfur atom, A D1 represents CR D7 or a nitrogen atom, A D2 represents CR D8 or a nitrogen atom, R D9 represents a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an acyl group, R D1 to R D8 represent a hydrogen atom or a substituent, and at least one of R D1 , . . . , or R D8 represents a substituent represented by the following Formula (W),
in Formula (E), X E1 and X E2 represent an oxygen atom, a sulfur atom, or NR E7 , A E1 and A E2 represent CR E8 or a nitrogen atom, R E1 to R E8 represent a hydrogen atom or a substituent, and at least one of R E1 , . . . , or R E8 represents a substituent represented by the following Formula (W),
in Formula (F), X F1 and X F2 represent an oxygen atom, a sulfur atom, or a selenium atom, R F1 to R F10 , R Fa , and R Fb represent a hydrogen atom or a substituent, at least one of R F1 , . . . , or R F10 , R Fa , or R Fb represents a substituent represented by Formula (W), and p and q represent an integer of 0 to 2,
in Formula (G), X G1 and X G2 represent NR G9 , an oxygen atom, or a sulfur atom, A G1 represents CR G7 or a nitrogen atom, A G2 represents CR G8 or a nitrogen atom, R G9 represents a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an acyl group, an aryl group, or a heteroaryl group, R G1 to R G8 represent a hydrogen atom or a substituent, and at least one of R G1 , . . . , or R G8 represents a substituent represented by the following Formula (W),
in Formula (H), X H1 and X H4 represent NR H7 , an oxygen atom, or a sulfur atom, R H7 represents a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an acyl group, an aryl group, or a heteroaryl group, R H1 to R H6 represent a hydrogen atom or a substituent, and at least one of R H1 , . . . , or R H6 represents a substituent represented by the following Formula (W),
in Formula (J), X J1 and X J2 represent an oxygen atom, a sulfur atom, a selenium atom, or NR J9 , X J3 and X J4 represent an oxygen atom, a sulfur atom, or a selenium atom, R J1 to R J9 represent a hydrogen atom or a substituent, and at least one of R J1 , . . . , or R J9 represents a substituent represented by the following Formula (W),
in Formula (K), X K1 and X K2 represent an oxygen atom, a sulfur atom, a selenium atom, or NR K9 , X K3 and X K4 represent an oxygen atom, a sulfur atom, or a selenium atom, R K1 to R K9 represent a hydrogen atom or a substituent, and at least one of R K1 , . . . , or R K9 represents a substituent represented by the following Formula (W),
in Formula (L), X L1 and X L2 represent an oxygen atom, a sulfur atom, or NR L11 , R L1 to R L11 represent a hydrogen atom or a substituent, and at least one of R L1 , . . . , or R L11 represents a substituent represented by the following Formula (W),
in Formula (M), X M1 and X M2 represent an oxygen atom, a sulfur atom, a selenium atom, or NR M9 , R M1 to R M9 represent a hydrogen atom or a substituent, and at least one of R M1 , . . . , or R M9 represents a substituent represented by the following Formula (W),
in Formula (N), X N1 and X N2 represent an oxygen atom, a sulfur atom, a selenium atom, or NR N13 , R N1 to R N13 represent a hydrogen atom or a substituent, and at least one of R N1 , . . . , or R N13 represents a substituent represented by the following Formula (W),
in Formula (P), X P1 and X P2 represent an o

Assignees

• Fujifilm Corp

Inventors

• Takizawa Hiroo
• Niori Teruki
• Yonekuta Yasunori
• Hirano Syuji

Classifications

• C08F212/08

  Styrene · CPC title

• H01L51/0003

  Electricity · mapped topic

• H01L51/052

  Electricity · mapped topic

• H01L51/0541

  Electricity · mapped topic

• H01L51/0094

  Electricity · mapped topic