Variable capacitance element
US-2024266427-A1 · Aug 8, 2024 · US
Complementary gallium nitride integrated circuits and methods of their fabrication
US2016372575A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016372575-A1 |
| Application number | US-201615251114-A |
| Country | US |
| Kind code | A1 |
| Filing date | Aug 30, 2016 |
| Priority date | Aug 12, 2013 |
| Publication date | Dec 22, 2016 |
| Grant date | — |
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Abstract
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An embodiment of a complementary GaN integrated circuit includes a GaN layer with a first bandgap. A second layer with a second bandgap is formed on the GaN layer, resulting in a 2DEG in a contact region between the GaN layer and the second layer. The second layer has a relatively thin portion and a relatively thick portion. A third layer is formed over the relatively thick portion of the second layer. The third layer has a third bandgap that is different from the second bandgap, resulting in a 2DHG in a contact region between the second layer and the third layer. A transistor of a first conductivity type includes the 2DHG, the relatively thick portion of the second layer, and the third layer, and a transistor of a second conductivity type includes the 2DEG and the relatively thin portion of the second layer.
First claim
Opening claim text (preview).
What is claimed is: 1 . A method of fabricating an integrated circuit, the method comprising the steps of: providing a first gallium nitride (GaN) layer, wherein the GaN layer has a first bandgap, a first region, and a second region adjacent to the first region; forming a first sub-layer of a second layer over a top surface of the GaN layer, wherein the first sub-layer has a second bandgap that is different from the first bandgap, resulting in a two dimensional electron gas (2…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US2016372575A1 cover?
- An embodiment of a complementary GaN integrated circuit includes a GaN layer with a first bandgap. A second layer with a second bandgap is formed on the GaN layer, resulting in a 2DEG in a contact region between the GaN layer and the second layer. The second layer has a relatively thin portion and a relatively thick portion. A third layer is formed over the relatively thick portion of the secon…
- Who is the assignee on this patent?
- Freescale Semiconductor Inc
- What technology area does this patent fall under?
- Primary CPC classification H10D84/05. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Dec 22 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).