Nanostructured graphene with atomically-smooth edges

Patent metadata

Field	Value
Publication number	US-2016368773-A1
Application number	US-201615184036-A
Country	US
Kind code	A1
Filing date	Jun 16, 2016
Priority date	Oct 27, 2011
Publication date	Dec 22, 2016
Grant date	—

Abstract

Methods of producing layers of patterned graphene with smooth edges are provided. The methods comprise the steps of fabricating a layer of crystalline graphene on a surface, wherein the layer of crystalline graphene has a crystallographically disordered edge, and decreasing the crystallographic disorder of the edge of the layer of crystalline graphene by heating the layer of crystalline graphene on the surface at an elevated temperature in a catalytic environment comprising carbon-containing molecules.

First claim

What is claimed is:

1 . Patterned graphene comprising a layer of graphene having plurality of features defined therein, wherein the features have internal or external edges that are aligned with the crystallographic direction of the graphene lattice and further wherein the plurality of features comprises at least 1,000 features.

2 . The patterned graphene of claim 1 , comprising a graphene antidot lattice, wherein the plurality of features are a plurality of holes defined in the layer of graphene, wherein the holes are hexagonal in shape and aligned with the hexagonal crystal symmetry of the graphene lattice, the graphene antidot lattice having an area of at least 1 μm 2 and a hole density of at least 1×10 11 holes/cm 2 .

3 . The patterned graphene of claim 2 , wherein the holes have diameters of 50 nm or less.

4 . The patterned graphene of claim 2 , wherein the holes have diameters of 10 nm or less.

5 . The patterned graphene of claim 1 , comprising a graphene nanoribbon array, wherein the plurality of features are a plurality of graphene nanoribbons aligned in a parallel arrangement along their longitudinal axes, wherein the edges of the nanoribbons have a root mean square roughness no greater than 5 nm and are aligned with the crystallographic direction of the graphene, the graphene nanoribbon array comprising at least 1000 nanoribbons.

6 . The patterned graphene of claim 5 , wherein the graphene nanoribbons have a pitch of 500 nm or less and the graphene nanoribbon array covers an area of at least 1 μm 2 .

7 . The patterned graphene of claim 5 , wherein the edges of the graphene nanoribbons have a zigzag configuration.

8 . The patterned graphene of claim 1 , comprising a graphene nanoribbon array, wherein the plurality of features are a plurality of graphene nanoribbons aligned in a parallel arrangement along their longitudinal axes, wherein the edges of the nanoribbons have a root mean square roughness no greater than 3 nm and are aligned with the crystallographic direction of the graphene, the graphene nanoribbon array comprising at least 1000 nanoribbons.

9 . The patterned graphene of claim 1 , comprising a graphene nanoribbon array, wherein the plurality of features are a plurality of graphene nanoribbons aligned in a parallel arrangement along their longitudinal axes, wherein the edges of the nanoribbons have a root mean square roughness no greater than 1 nm and are aligned with the crystallographic direction of the graphene, the graphene nanoribbon array comprising at least 1000 nanoribbons.

10 . The patterned graphene of claim 1 , wherein the internal or external edges a zigzag configuration.

11 . The patterned graphene of claim 1 having an area of at least 1 mm 2 .

Assignees

• Wisconsin Alumni Res Found

Inventors

• Arnold Michael Scott
• Gopalan Padma
• Safron Nathaniel S
• Kim Myungwoong

Classifications

• C01B31/0453

  Chemistry & Metallurgy · mapped topic

• C01B2204/32

  Size or surface area · CPC title

• C01B31/0484 Primary

  Chemistry & Metallurgy · mapped topic

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title

• Y10S977/734

  Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc. · CPC title