Light emitting device

Patent metadata

Field	Value
Publication number	US-2016365486-A1
Application number	US-201615244744-A
Country	US
Kind code	A1
Filing date	Aug 23, 2016
Priority date	Nov 12, 2014
Publication date	Dec 15, 2016
Grant date	—

Abstract

A light emitting device includes a light emitting structure including a support structure including a first bulk electrode a second bulk electrode disposed on and electrically connected to the first electrode and the second electrode, respectively. A substrate is disposed adjacent to the support structure, wherein each of the first and second bulk electrodes includes an upper region and a lower region with the upper regions of the first and second bulk electrodes being separated from each other by a first distance. The substrate includes a first interconnection portion and a second interconnection portion electrically connected to the first bulk electrode and the second bulk electrode, respectively, and separated from each other by a second distance. The second distance is greater than the first distance.

First claim

What is claimed is:

1 . A light emitting device comprising:
a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer, and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode electrically connected to the first conductive type semiconductor layer; a second electrode disposed on and electrically connected to the second conductive type semiconductor layer; a support structure comprising a first bulk electrode disposed on and electrically connected to the first electrode, and a second bulk electrode disposed on and electrically connected to the second electrode, and wherein the first bulk electrode and the second bulk electrode are separated from each other with an insulation support layer disposed between the first bulk electrode and the second bulk electrode; and a substrate disposed adjacent to the support structure, is wherein each of the first and second bulk electrodes comprises an upper region and a lower region, with the upper regions of the first and second bulk electrodes being separated from each other by a first distance, the substrate includes a first interconnection portion and a second interconnection portion electrically connected to the first bulk electrode and the second bulk electrode, respectively, and separated from each other by a second distance greater than the first distance.

2 . The light emitting device of claim 1 , wherein
the first bulk electrode comprises a first plane facing the second bulk electrode and a second plane disposed opposite the first plane; the second bulk electrode comprises a third plane facing the first bulk electrode and a fourth plane disposed opposite the third plane; and the first and second bulk electrodes comprises a first depression inset from lower edges of the first and third planes, respectively.

3 . The light emitting device of claim 2 , wherein the first depression comprises a single substantially planar surface.

4 . The light emitting device of claim 2 , wherein the first depression comprises a convex or a concave surface.

5 . The light emitting device of claim 2 , wherein the first depression comprises a plurality of planar surfaces.

6 . The light emitting device of claim 2 , wherein each of the first and second bulk electrodes comprise a second depression inset from lower edges of the second and fourth planes, respectively.

7 . The light emitting device of claim 1 , wherein the lower regions of the first and second bulk electrodes are separated from each other by a third distance greater than the first distance between the upper regions.

8 . The light emitting device of claim 7 , wherein the first distance between the upper regions is 100 μm or less.

9 . The light emitting device of claim 7 , wherein the third distance between the lower regions is 250 μm or less.

10 . The light emitting device of claim 1 , wherein the lower regions of the first and second bulk electrodes are separated from each other by a third distance and the second distance between the first and the second interconnection portions is greater than the third distance between the lower regions.

11 . The light emitting device of claim 1 , wherein the first bulk electrode and the second bulk electrode have a thickness approximately 5 to 20 times greater than the thickness of the first electrode and the second electrode, respectively.

12 . The light emitting device of claim 1 , further comprising:
a first insulation layer covering a lower surface of the light emitting structure and lower and side surfaces of the second electrode, and disposed between the light emitting structure and the first electrode to insulate the first electrode from the second electrode.

13 . The light emitting device of claim 1 , further comprising a second insulation layer covering a portion of the first electrode.

14 . The light emitting device of claim 1 , wherein the substrate further comprises a base supporting the first interconnection portion and the second interconnection portion, the substrate including at least one via-hole formed through the base.

15 . The light emitting device of claim 14 , wherein via-holes are disposed on the first bulk electrode and the second bulk electrode, respectively.

16 . The light emitting device of claim 14 , wherein the at least one via-hole does not overlap the first bulk electrode and the second bulk electrode in a vertical direction.

17 . The light emitting device of claim 1 , wherein each of the first and second bulk electrodes comprises a monolithic layer.

18 . The light emitting device of claim 1 , further comprising:
solder material disposed between the first bulk electrode and the first interconnection portion and between the second bulk electrode and the second interconnection portion.

19 . The light emitting device of claim 18 , wherein the insulation support layer between the first and second bulk electrodes prevents the solder material from flowing between and disconnecting the bulk electrodes.

Assignees

• Seoul Viosys Co Ltd

Inventors

• Kim Chang Yeon
• Son Sung Su
• Lee Joon Sup
• Chae Jong Hyeon

Classifications

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10H20/8585

  being an interconnection · CPC title

• H10H20/032

  of electrodes · CPC title

• H10H20/018

  Bonding of wafers · CPC title

• H10H20/8506

  Containers · CPC title