Semiconductor device

Patent metadata

Field	Value
Publication number	US-2016365359-A1
Application number	US-201615239006-A
Country	US
Kind code	A1
Filing date	Aug 17, 2016
Priority date	Jul 10, 2013
Publication date	Dec 15, 2016
Grant date	—

Abstract

A semiconductor device includes first and second transistors having the same conductivity type and a circuit. One of a source and a drain of the first transistor is electrically connected to that of the second transistor. First and third potentials are supplied to the circuit through respective wirings. A second potential and a first clock signal are supplied to the others of the sources and the drains of the first and second transistors, respectively. A second clock signal is supplied to the circuit. The third potential is higher than the second potential which is higher than the first potential. A fourth potential is equal to or higher than the third potential. The first clock signal alternates the second and fourth potentials and the second clock signal alternates the first and third potentials. The circuit controls electrical connections between gates of the first and second transistors and the wirings.

First claim

What is claimed is:

1 . A semiconductor device comprising:
a first transistor; a second transistor; a third transistor; a fourth transistor; a fifth transistor; a first wiring supplied with a first potential; a second wiring supplied with a second potential; and a third wiring supplied with a third potential, wherein one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor, wherein a gate of the third transistor is electrically connected to a gate of the first transistor, wherein one of a source and a drain of the third transistor is electrically connected to one of a source and a drain of the fourth transistor, wherein one of a source and a drain of the fifth transistor is electrically connected to a gate of the second transistor, wherein the other of the source and the drain of the fifth transistor is electrically connected to the one of the source and the drain of the third transistor and the one of the source and the drain of the fourth transistor, wherein the other of the source and the drain of the third transistor is electrically connected to the first wiring, wherein the other of the source and the drain of the first transistor is electrically connected to the second wiring, wherein the other of the source and the drain of the fourth transistor is electrically connected to the third wiring, wherein a gate of the fifth transistor is electrically connected to the third wiring, wherein the second potential is higher than the first potential, wherein the third potential is higher than the second potential, and wherein each of the first transistor, the second transistor, the third transistor, the fourth transistor and the fifth transistor is an n-channel transistor.

2 . The semiconductor device according to claim 1 , further comprising a sixth transistor and a seventh transistor,
wherein one of a source and a drain of the sixth transistor is electrically connected to one of a source and a drain of the seventh transistor, wherein the other of the source and the drain of the sixth transistor is electrically connected to the first wiring, wherein a gate of the sixth transistor is electrically connected to the gate of the first transistor, and the gate of the third transistor, and wherein a gate of the seventh transistor is electrically connected to the one of the source and the drain of the third transistor, the one of the source and the drain of the fourth transistor, and the other of the source and the drain of the fifth transistor.

3 . The semiconductor device according to claim 2 , further comprising an eighth transistor,
wherein one of a source and a drain of the eighth transistor is electrically connected to the gate of the first transistor, the gate of the third transistor, and the gate of the sixth transistor, wherein a gate of the eighth transistor is electrically connected to a gate of the fourth transistor, and wherein the other of the source and the drain of the eighth transistor is electrically connected to the first wiring.

4 . The semiconductor device according to claim 3 , further comprising a ninth transistor,
wherein one of a source and a drain of the ninth transistor is electrically connected to the gate of the first transistor, the gate of the third transistor, the gate of the sixth transistor, and the one of the source and the drain of the eighth transistor, and wherein the other of the source and the drain of the ninth transistor is electrically connected to the third wiring.

5 . The semiconductor device according to claim 4 , further comprising a tenth transistor,
wherein one of a source and a drain of the tenth transistor is electrically connected to the gate of the first transistor, the gate of the third transistor, the gate of the sixth transistor, the one of the source and the drain of the eighth transistor, and the other of the source and the drain of the ninth transistor, and wherein the other of the source and the drain of the tenth transistor is electrically connected to the third wiring.

6 . The semiconductor device according to claim 5 , further comprising a eleventh transistor,
wherein one of a source and a drain of the eleventh transistor is electrically connected to the gate of the seventh transistor, wherein the other of the source and the drain of the eleventh transistor is electrically connected to the one of the source and the drain of the third transistor, the one of the source and the drain of the fourth transistor, and the other of the source and the drain of the fifth transistor, and wherein a gate of the eleventh transistor is electrically connected to the third wiring.

7 . The semiconductor device according to claim 5 , further comprising a twelfth transistor,
wherein one of a source and a drain of the twelfth transistor is electrically connected to the other of the source and the drain of the fifth transistor and the gate of the seventh transistor, wherein the other of the source and the drain of the twelfth transistor is electrically connected to the one of the source and the drain of the third transistor and the one of the source and the drain of the fourth transistor, and wherein a gate of the twelfth transistor is electrically connected to the third wiring.

8 . A semiconductor device comprising:
a first transistor; a second transistor; a third transistor; a fourth transistor; a fifth transistor; a first wiring supplied with a first potential; a second wiring supplied with a second potential; and a third wiring supplied with a third potential, wherein one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor, wherein a gate of the third transistor is electrically connected to a gate of the first transistor, wherein one of a source and a drain of the third transistor is electrically connected to one of a source and a drain of the fourth transistor, wherein one of a source and a drain of the fifth transistor is electrically connected to a gate of the second transistor, wherein the other of the source and the drain of the fifth transistor is electrically connected to the one of the source and the drain of the third transistor and the one of the source and the drain of the fourth transistor, wherein the other of the source and the drain of the third transistor is electrically connected to the first wiring, wherein the other of the source and the drain of the first transistor is electrically connected to the second wiring, wherein the other of the source and the drain of the fourth transistor is electrically connected to the third wiring, wherein a gate of the fifth transistor is electrically connected to the third wiring, wherein the second potential is higher than the first potential, wherein the third potential is higher than the second potential, and wherein each of the first transistor, the second transistor, the third transistor, the fourth transistor and the fifth transistor comprises an oxide semiconductor film comprising a channel formation region.

9 . The semiconductor device according to claim 8 , further comprising a sixth transistor and a seventh transistor,
wherein one of a source and a drain of the sixth transistor is electrically connected to one of a source and a drain of the seventh transistor, wherein the other of the source and the drain of the sixth transistor is electrically connected to the first wiring, wherein a gate of the sixth transistor is electrically connected to the gate of the first transistor, and the gate of the third transistor, and wherein a gate of the seventh transistor is electrically connecte

Assignees

• Semiconductor Energy Lab

Inventors

• Toyotaka Kouhei
• Koyama Jun
• Miyake Hiroyuki

Classifications

• G02F1/1368

  in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)} · CPC title

• G02F1/136286

  Wiring, e.g. gate line, drain line · CPC title

• G09G2310/08

  Details of timing specific for flat panels, other than clock recovery · CPC title

• G11C19/287

  Organisation of a multiplicity of shift registers · CPC title

• G09G3/3688

  suitable for active matrices only · CPC title