Antenna Apparatus and Method

Patent metadata

Field	Value
Publication number	US-2016359221-A1
Application number	US-201615237904-A
Country	US
Kind code	A1
Filing date	Aug 16, 2016
Priority date	Dec 13, 2012
Publication date	Dec 8, 2016
Grant date	—

Abstract

An antenna apparatus comprises a semiconductor die embedded in and adjacent to a first side of a molding compound layer, a plurality of first interconnects formed on the first side of the molding compound layer, wherein the plurality of first interconnects are electrically connected the semiconductor die and an antenna structure formed on a second side of the molding compound layer, wherein the antenna structure is electrically connected to the semiconductor die through a via connected between the plurality of first interconnects and the antenna structure.

First claim

What is claimed is:

1 . A device comprising:
a semiconductor die embedded in and adjacent to a first side of a molding compound layer; a plurality of first interconnects formed on the first side of the molding compound layer, wherein the plurality of first interconnects are electrically connected the semiconductor die; and an antenna structure formed on a second side of the molding compound layer, wherein:
the antenna structure is electrically connected to the semiconductor die through a via connected between the plurality of first interconnects and the antenna structure.

2 . The device of claim 1 , wherein:
the first side and the second side are on opposite sides of the molding compound layer.

3 . The device of claim 1 , wherein:
the via extends through the molding compound layer.

4 . The device of claim 1 , wherein:
the via extends through the semiconductor die.

5 . The device of claim 1 , wherein:
the antenna structure and the semiconductor die are separated by the molding compound layer.

6 . The device of claim 1 , wherein:
the antenna structure is of a dipole shape.

7 . The device of claim 6 , wherein:
the antenna structure is in a fan-out region beyond an outermost edge of the semiconductor die.

8 . A device comprising:
a semiconductor die embedded in a molding compound layer to form a fan-out package; a plurality of interconnect structures formed over a first side of the molding compound layer; and an antenna structure formed over a second side of the molding compound layer, wherein the antenna structure is electrically connected to the semiconductor die through a conductive path formed by the plurality of interconnect structures and a via extending through the molding compound layer.

9 . The device of claim 8 , wherein:
the semiconductor die is adjacent to the first side of the molding compound layer, and wherein at least one interconnect structure is in contact with the semiconductor die.

10 . The device of claim 8 , wherein:
the antenna structure is an L-shaped metal line.

11 . The device of claim 8 , wherein:
the via is a conductive via having one terminal in contact with the antenna structure.

12 . The device of claim 8 , wherein:
the antenna structure is of a patch shape.

13 . The device of claim 8 , wherein:
the antenna structure is formed of copper.

14 . The device of claim 8 , wherein:
the antenna structure is of a meander line shape.

15 . A method comprising:
embedding a semiconductor die in a molding compound layer form a fan-out package; forming a portion of a via in the molding compound layer and an L-shaped antenna structure on a first side of the molding compound layer; and forming an interconnect structure on a second side of the molding compound layer, wherein the interconnect structure is electrically connected to the L-shaped antenna structure through the via.

16 . The method of claim 15 , wherein:
the via extends through the semiconductor die and partially through the molding compound layer, and wherein the via has a first terminal in contact with the L-shaped antenna structure and a second terminal in contact with the interconnect structure.

17 . The method of claim 15 , wherein:
the via extends through the molding compound layer, and wherein the via has a first terminal in contact with the L-shaped antenna structure and a second terminal in contact with the interconnect structure.

18 . The method of claim 15 , further comprising:
forming the L-shaped antenna structure on the first side of the molding compound layer, wherein at least a portion of the L-shaped antenna structure extends over a top surface of the semiconductor die.

19 . The method of claim 15 , further comprising:
forming the L-shaped antenna structure on the first side of the molding compound layer, wherein the L-shaped antenna structure is in a fan-out region of the fan-out package.

20 . The method of claim 15 , wherein:
the L-shaped antenna structure is formed of copper.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Chih Lai Wei
• Liu Monsen
• Yeh En-Hsiang
• Wang Chuei-Tang
• Yu Chen-Hua

Classifications

• H01Q9/0407

  Substantially flat resonant element parallel to ground plane, e.g. patch antenna (dipole H01Q9/285; monopole H01Q9/40) · CPC title

• H01Q1/2283 Primary

  mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package · CPC title

• H01Q1/36

  Structural form of radiating elements, e.g. cone, spiral, umbrella; {Particular materials used therewith}(H01Q1/08, H01Q1/14 take precedence) · CPC title

• H10W74/114

  by a substrate and the encapsulations · CPC title

• H10W74/019

  using temporary auxiliary substrates (H10W74/017 takes precedence) · CPC title