Integrated directional coupler within an rf matching network

Patent metadata

Field	Value
Publication number	US-2016359216-A1
Application number	US-201615194315-A
Country	US
Kind code	A1
Filing date	Jun 27, 2016
Priority date	Apr 23, 2012
Publication date	Dec 8, 2016
Grant date	—

Abstract

A directional coupler utilizes an inductive element of a power amplifier and a coupled conductive element. The inductive element of the power amplifier is a functioning element within the power amplifier and at least part of the inductive element of the power amplifier is disposed in a multi-layer substrate. At least part of the coupled conductive element is disposed in the multi-layer substrate. The coupled conductive element is configured to be inductively coupled to the inductive element of the power amplifier such that the coupled conductive element carries a first RF signal that is representative of a second RF signal within the inductive element of the power amplifier.

First claim

What is claimed is:

1 . An integrated directional coupler, comprising:
an input port; an output port; an isolated port; a coupled port; an inductive element within a power amplifier, wherein the inductive element is coupled between the input port and the output port, and wherein the inductive element includes a first wire loop; and a coupled conductive element coupled between the isolated port and the coupled port, wherein the coupled conductive element is electromagnetically coupled to the inductive element such that a signal at the coupled port is representative of a signal output by the power amplifier, and wherein the coupled conductive element includes a second wire loop.

2 . The integrated directional coupler of claim 1 , wherein the first wire loop and the second wire loop are separated by a dielectric layer.

3 . The integrated directional coupler of claim 1 , wherein the first wire loop and the second wire loop are circular.

4 . The integrated directional coupler of claim 1 , wherein the first wire loop and the second wire loop are octagonal.

5 . The integrated directional coupler of claim 1 , wherein the inductive element further includes a third wire loop coupled in series with the first wire loop.

6 . The integrated directional coupler of claim 5 , wherein the first wire loop is separated from the third wire loop by a first dielectric layer and the second wire loop is separated from the third wire loop by a second dielectric layer.

7 . The integrated directional coupler of claim 5 , wherein the first wire loop is disposed on a first dielectric layer of a multilayer substrate, wherein the third wire loop is disposed between the first dielectric layer and a second dielectric layer of the multilayer substrate, and where the second wire loop is disposed on the second dielectric layer of the multilayer substrate.

8 . The integrated directional coupler of claim 7 , wherein the power amplifier is at least partially disposed in an integrated circuit die mounted to an upper surface of the multilayer substrate.

9 . The integrated directional coupler of claim 8 , further comprising:
a first pad coupled to the isolated port; and a second pad coupled to the coupled port, wherein the first pad and the second pad are disposed on a bottom surface of the multilayer substrate.

10 . The integrated directional coupler of claim 9 , further comprising a third pad coupled to the output port, wherein the third pad is disposed on the bottom surface of the multilayer substrate.

11 . The integrated directional coupler of claim 10 , wherein a first end of the second wire loop is coupled to the first pad by a first via, wherein a second end of the second wire loop is coupled to the second pad by a second via, wherein an end of the first wire loop is coupled to a first end of the third wire loop by a third via, and wherein a second end of the third wire loop is coupled to the third pad by a via stack.

12 . The integrated directional coupler of claim 1 , wherein the first wire loop is disposed on a first dielectric layer of a multilayer substrate, and where the second wire loop is disposed on a second dielectric layer of the multilayer substrate.

13 . The integrated directional coupler of claim 12 , wherein the power amplifier is at least partially disposed in an integrated circuit die mounted to an upper surface of the multilayer substrate.

14 . The integrated directional coupler of claim 13 , further comprising:
a first pad coupled to the isolated port; and a second pad coupled to the coupled port, wherein the first pad and the second pad are disposed on a bottom surface of the multilayer substrate.

15 . The integrated directional coupler of claim 14 , further comprising a third pad coupled to the output port, wherein the third pad is disposed on the bottom surface of the multilayer substrate.

16 . A radio-frequency matching network and integrated directional coupler, comprising:
a tuned matching network having an inductive element to carry a first radio-frequency signal, the inductive element including a first wire loop; and a coupled conductive element to carry a second radio-frequency signal, the coupled conductive element including a second wire loop electromagnetically coupled to the first wire loop such that the second radio-frequency signal is representative of the first radio-frequency signal.

17 . The radio-frequency matching network and integrated directional coupler of claim 16 , wherein the tuned matching network is an output match circuit of a power amplifier.

18 . The radio-frequency matching network and integrated directional coupler of claim 17 , wherein the first wire loop is configured to resonate with at least one other passive component.

19 . The radio-frequency matching network and integrated directional coupler of claim 16 , wherein at least part of the inductive element is disposed in a multilayer substrate and wherein at least part of the coupled conductive element is disposed in the multilayer substrate.

20 . The radio-frequency matching network and integrated directional coupler of claim 19 , further comprising a dielectric layer disposed between the first wire loop and the second wire loop.

21 . The radio-frequency matching network and integrated directional coupler of claim 19 , wherein the inductive element further includes a third wire loop coupled in series with the first wire loop.

22 . The radio-frequency matching network and integrated directional coupler of claim 21 , wherein the first wire loop, the second wire loop, and the third wire loop are separated by dielectric layers.

23 . The radio-frequency matching network and integrated directional coupler of claim 19 , further comprising a power amplifier having an output coupled to the first wire loop.

24 . The radio-frequency matching network and integrated directional coupler of claim 23 , wherein the power amplifier is disposed in an integrated circuit die mounted to the multilayer substrate.

25 . The radio-frequency matching network and integrated directional coupler of claim 16 , wherein the first wire loop and the second wire loop are circular.

26 . The radio-frequency matching network and integrated directional coupler of claim 16 , wherein the first wire loop and the second wire loop are octagonal.

Assignees

• Qualcomm Inc

Inventors

• Kase Kiyoshi
• Goldenberg Marius
• Paul Susanne A

Classifications

• H10W44/234

  Arrangements for impedance matching · CPC title

• H10W44/216

  Waveguides, e.g. strip lines · CPC title

• H10W44/209

  Vertical interconnections, e.g. vias · CPC title

• H10W44/20

  at high-frequency [HF] or radio frequency [RF] · CPC title

• H10W44/501

  Inductive arrangements (H10W44/20 takes precedence) · CPC title