Semiconductor device

Patent metadata

Field	Value
Publication number	US-2016358874-A1
Application number	US-201515119051-A
Country	US
Kind code	A1
Filing date	Feb 16, 2015
Priority date	Apr 16, 2014
Publication date	Dec 8, 2016
Grant date	—

Abstract

A semiconductor device capable of inhibiting oxidation of a Cu wiring even in a high temperature operation. The semiconductor device includes a semiconductor substrate having a main surface, a Cu electrode which is selectively formed on a side of the main surface of the semiconductor substrate, an antioxidant film formed on an upper surface of the Cu electrode except an end portion thereof, an organic resin film which is formed on the main surface of the semiconductor substrate and covers a side surface of the Cu electrode and the end portion of the upper surface thereof, and a diffusion prevention film formed between the organic resin film and the main surface of the semiconductor substrate and between the organic resin film and the side surface and the end portion of the upper surface of the Cu electrode, being in contact therewith.

First claim

1 - 13 . (canceled)

14 : A semiconductor device comprising:
a semiconductor substrate having a main surface; a Cu electrode which is selectively formed on a side of said main surface of said semiconductor substrate; an antioxidant film formed on an upper surface of said Cu electrode except an end portion thereof; an inorganic film which is formed on said main surface of said semiconductor substrate so as to be in close contact with said antioxidant film and to cover a side surface of said Cu electrode and said end portion of said upper surface thereof on which said antioxidant film is not formed; and an organic resin film formed on said inorganic film except a region of said upper surface of said Cu electrode on which said antioxidant film is formed.

15 : The semiconductor device according to claim 14 , wherein
said antioxidant film comprises a first antioxidant film formed on said Cu electrode; and a second antioxidant film formed on an upper surface of said first antioxidant film except an end portion thereof, and said inorganic film is formed to be in contact with a side surface of said first antioxidant film.

16 : The semiconductor device according to claim 14 , further comprising:
a barrier metal layer formed between said semiconductor substrate and said Cu electrode, wherein said inorganic film is formed to be in contact with a side surface of said barrier metal layer.

17 : The semiconductor device according to claim 16 , wherein
said Cu electrode is formed on an upper surface of said barrier metal layer except an end portion thereof, and said inorganic film is formed to be in contact with said upper surface of said barrier metal layer.

18 : The semiconductor device according to claim 14 , wherein
said antioxidant film is formed of Ni, Ag, Sn, Al, Au, or an alloy containing these metals, having a thickness not smaller than 10 nm and smaller than 100 μm.

19 : The semiconductor device according to claim 15 , wherein
said first antioxidant film is formed of Ni, Ag, Sn, Al, Au, or an alloy containing these metals, having a thickness not smaller than 10 nm and smaller than 10 μm.

20 : The semiconductor device according to claim 15 , wherein
said second antioxidant film is formed of Ni, Ag, Sn, Al, Au, or an alloy containing these metals, having a thickness not smaller than 10 nm and smaller than 100 μm.

21 : The semiconductor device according to claim 14 , wherein
said inorganic film is formed of SiN, having a thickness not smaller than 30 nm and smaller than 10 μm.

22 : The semiconductor device according to claim 21 , wherein
said inorganic film is formed of semi-insulating SiN having a refractive index not lower than 2.4 and lower than 2.7.

23 : The semiconductor device according to claim 14 , wherein
said inorganic film is formed of SiON, having a thickness not smaller than 30 nm and smaller than 10 μm.

24 : The semiconductor device according to claim 14 , wherein
a thickness of said organic resin film is not smaller than 3 μm and smaller than 100 μm.

25 : The semiconductor device according to claim 14 , wherein
a thickness of said Cu electrode is not smaller than 7 μm and smaller than 100 μm.

26 : The semiconductor device according to claim 14 , wherein
said semiconductor substrate is a silicon carbide substrate.

27 : A semiconductor device comprising:
a semiconductor substrate having a main surface; a Cu electrode which is selectively formed on a side of said main surface of said semiconductor substrate; an antioxidant film formed on an upper surface of said Cu electrode except an end portion thereof; an inorganic film which is so formed on said main surface of said semiconductor substrate so as to cover a side surface of said Cu electrode, said end portion of said upper surface of said Cu electrode, said end portion not comprising said antioxidant film, and an end portion of an upper surface of said antioxidant film, and to expose a region of said upper surface of said antioxidant film except said end portion thereof as an exposed region; and an organic resin film formed on said inorganic film except said exposed region of said upper surface of said antioxidant film.

Assignees

• Mitsubishi Electric Corp

Inventors

• YOSHIDA Motoru
• Endo Kazuyo
• Fujita Jun
• Okabe Hiroaki
• Sugahara Kazuyuki

Classifications

• H10W90/736

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W72/9232

  with additional elements interposed between layers · CPC title

• H10W72/07354

  changes in dispositions · CPC title