Semiconductor apparatus, stacked semiconductor apparatus, encapsulated stacked-semiconductor apparatus, and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-2016358833-A1
Application number	US-201615163016-A
Country	US
Kind code	A1
Filing date	May 24, 2016
Priority date	Jun 8, 2015
Publication date	Dec 8, 2016
Grant date	—

Abstract

The present invention is a semiconductor apparatus including a semiconductor device, an on-semiconductor-device metal pad and a metal interconnect each electrically connected to the semiconductor device, a through electrode and a solder bump each electrically connected to the metal interconnect, a first photosensitive insulating layer formed on the semiconductor device, and a second photosensitive insulating layer formed on the first photosensitive insulating layer, in which the first and second photosensitive insulating layers are composed of a photo-curable resin composition containing a silicone polymer compound having an epoxy group-containing repeating unit shown by formula (1) and a phenolic hydroxyl group-containing repeating unit shown by formula (2), a photosensitive acid generator, a solvent, and crosslinking agents. There can be provided a semiconductor apparatus that can be easily placed on a circuit board and stacked by forming a fine electrode on the semiconductor device and providing a through electrode outside the semiconductor device.

First claim

1 . A semiconductor apparatus comprising: a semiconductor device; an on-semiconductor-device metal pad electrically connected to the semiconductor device; a metal interconnect electrically connected to the semiconductor device; a through electrode electrically connected to the metal interconnect; a solder bump electrically connected to the metal interconnect; a first photosensitive insulating layer formed on the semiconductor device; and a second photosensitive insulating layer formed on the first photosensitive insulating layer, wherein the first photosensitive insulating layer and the second photosensitive insulating layer are composed of a photo-curable resin composition containing
(A) a silicone polymer compound having an epoxy group-containing repeating unit shown by the following general formula (1) and a phenolic hydroxyl group-containing repeating unit shown by the following general formula (2), wherein the silicone polymer compound has a weight average molecular weight of 3,000 to 500,000 and satisfies 0.05≦J/(J+K)≦0.95 where J is a mole of epoxy groups in the general formula (1) and K is a mole of phenolic hydroxyl groups in the general formula (2),

wherein a and b represent a positive number; R 1 , R 2 , R 3 , and R 4 may be the same or different and represent a hydrogen atom or an alkyl or alkoxy group having 1 to 4 carbon atoms; r independently represents 0, 1, or 2; R 5 to R 8 independently represent a hydrogen atom or a monovalent hydrocarbon group having 1 to 10 carbon atoms; R 9 represents a divalent hydrocarbon group having 1 to 10 carbon atoms; n represents 0 or 1; k represents 0, 1, or 2; R 10 and R 11 may be the same or different and represent an alkyl or alkoxy group having 1 to 4 carbon atoms; Z represents a divalent organic group selected from any of

and X represents a divalent organic group shown by the following formula (3) or the following general formula (4),

wherein R 12 , R 13 , R 14 , and R 15 may be the same or different and represent a monovalent hydrocarbon group having 1 to 10 carbon atoms; and m represents a positive number of 1 to 100,
(B) a photosensitive acid generator capable of generating an acid by decomposition with light having a wavelength of 190 to 500 nm,
(C) a solvent,
(D) one or two or more compounds selected from an amino condensate modified with formaldehyde or formaldehyde-alcohol, a phenol compound having on average two or more methylol groups or alkoxymethylol groups per molecule, and a polyhydric phenol compound whose phenolic hydroxyl group is substituted with a glycidoxy group, and
(E) one or two or more compounds selected from polyhydric phenols having 3 or more hydroxyl groups.

2 . The semiconductor apparatus according to claim 1 , wherein the photo-curable resin composition further contains (F) a basic compound.

3 . The semiconductor apparatus according to claim 1 , wherein a cured product of the photo-curable resin composition has an elastic modulus of 0.1 to 2 GPa and a tensile strength of 1 to 80 MPa.

4 . The semiconductor apparatus according to claim 2 , wherein a cured product of the photo-curable resin composition has an elastic modulus of 0.1 to 2 GPa and a tensile strength of 1 to 80 MPa.

5 . The semiconductor apparatus according to claim 1 , wherein the first photosensitive insulating layer is formed of a photo-curable dry film, and the second photosensitive insulating layer is formed of the photo-curable dry film or a photo-curable resist coating film.

6 . A stacked semiconductor apparatus, comprising a plurality of semiconductor apparatuses according to claim 1 , the semiconductor apparatuses being stacked by flip chip.

7 . An encapsulated stacked-semiconductor apparatus, comprising a stacked semiconductor apparatus according to claim 6 placed on a substrate having an electric circuit, the stacked semiconductor apparatus being encapsulated with an insulating encapsulating resin layer.

8 . A method for manufacturing a semiconductor apparatus, comprising the steps of:
(1) preparing a photo-curable dry film comprising a photo-curable resin layer sandwiched between a supporting film and a protective film, the photo-curable resin layer having a thickness of 10 to 300 m and being composed of a resist composition; (2) forming a first photosensitive insulating layer by laminating the photo-curable resin layer of the photo-curable dry film on a substrate including a semiconductor device adhering or temporarily adhering to an upper surface of the substrate such that the semiconductor device is covered with the photo-curable resin layer, the semiconductor device having a height of 20 to 100 μm and including an exposed electrode pad; (3) patterning the first photosensitive insulating layer by lithography through a mask to simultaneously form an opening on the electrode pad and an opening for forming a through electrode provided outside the semiconductor device; (4) after patterning, baking a pattern obtained by the patterning of the first photosensitive insulating layer to cure the pattern; (5) after curing, forming a seed layer by sputtering and then filling the opening on the electrode pad and the opening for forming a through electrode by plating to form an on-semiconductor-device metal pad and a through electrode respectively, and connecting the on-semiconductor-device metal pad and the through electrode formed by plating through a metal interconnect formed by plating; (6) after forming the metal interconnect, forming a second photosensitive insulating layer by laminating the photo-curable resin layer of the photo-curable dry film or applying the resist composition, and patterning the second photosensitive insulating layer to form an opening on the through electrode; (7) after patterning, baking a pattern obtained by the patterning of the second photosensitive insulating layer to cure the pattern; and (8) after curing, forming a solder bump in the opening on the through electrode, wherein
the resist composition constituting the photo-curable resin layer of the photo-curable dry film prepared in the step (1) is a chemically amplified negative resist composition containing
(A) a silicone polymer compound having an epoxy group-containing repeating unit shown by the following general formula (1) and a phenolic hydroxyl group-containing repeating unit shown by the following general formula (2), wherein the silicone polymer compound has a weight average molecular weight of 3,000 to 500,000 and satisfies 0.05≦J/(J+K)≦0.95 where J is a mole of epoxy groups in the general formula (1) and K is a mole of phenolic hydroxyl groups in the general formula (2),

wherein a and b represent a positive number; R 1 , R 2 , R 3 , and R 4 may be the same or different and represent a hydrogen atom or an alkyl or alkoxy group having 1 to 4 carbon atoms; r independently represents 0, 1, or 2; R 5 to R 8 independently represent a hydrogen atom or a monovalent hydrocarbon group having 1 to 10 carbon atoms; R 9 represents a divalent hydrocarbon group having 1 to 10 carbon atoms; n represents 0 or 1; k represents 0, 1, or 2; R 10 and R 11 may be the same or different and represent an alkyl or alkoxy group having 1 to 4 carbon atoms; Z represents a divalent organic group selected from any of

Assignees

• Shinetsu Chemical Co

Inventors

• Soga Kyoko
• Asai Satoshi
• Takemura Katsuya

Classifications

• H10W90/722

  between stacked chips · CPC title

• H10W90/291

  characterised by containers, encapsulations, or other housings for the stacked chips · CPC title

• H10W90/26

  the stacked chips being of the same size without any chips being laterally offset, e.g. chip stacks having a rectangular shape · CPC title

• H10W74/142

  the encapsulations exposing the passive side of the semiconductor body · CPC title

• H10W72/9413

  on encapsulations · CPC title