Semiconductor manufacturing system and semiconductor manufacturing method

Patent metadata

Field	Value
Publication number	US-2016358762-A1
Application number	US-201514836080-A
Country	US
Kind code	A1
Filing date	Aug 26, 2015
Priority date	Jun 3, 2015
Publication date	Dec 8, 2016
Grant date	—

Abstract

In one embodiment, a semiconductor manufacturing system includes a gas supply module configured to supply an etching gas. The system further includes a chamber configured to house a substrate. The system further includes a metal member housing provided outside the chamber and configured to house a metal member, the metal member housing being configured to introduce the etching gas and to discharge a metal-containing gas that contains a metal etched from the metal member by the etching gas. Furthermore, the chamber is configured to introduce the metal-containing gas discharged from the metal member housing and to form a metal film on the substrate by the metal-containing gas.

First claim

1 . A semiconductor manufacturing system comprising:
a gas supply module configured to supply an etching gas; a chamber configured to house a substrate; and a metal member housing provided outside the chamber and configured to house a metal member, the metal member housing being configured to introduce the etching gas and to discharge a metal-containing gas that contains a metal etched from the metal member by the etching gas, wherein the chamber is configured to introduce the metal-containing gas discharged from the metal member housing and to form a metal film on the substrate by the metal-containing gas.

2 . The system of claim 1 , further comprising a heating module configured to heat the metal member in the metal member housing.

3 . The system of claim 1 , further comprising a plasma generator configured to change the etching gas to be introduced to the metal member housing into plasma.

4 . The system of claim 1 , further comprising a valve provided between the metal member housing and the chamber and configured to control supply of the metal-containing gas from the metal member housing to the chamber.

5 . The system of claim 1 , wherein the metal member includes a hole through which the etching gas passes.

6 . The system of claim 1 , wherein the metal member contains a group 4, 5 or 6 metal element.

7 . The system of claim 1 , wherein the metal member contains two or more kinds of metal elements.

8 . The system of claim 1 , wherein the metal film contains a metal element that configures the metal member.

9 . The system of claim 1 , wherein the etching gas contains a halogen.

10 . The system of claim 1 , further comprising a reducing gas supply module configured to supply, to the chamber, a reducing gas that reduces the metal-containing gas.

11 . The system of claim 10 , wherein the reducing gas contains ammonia, monosilane or disilane.

12 . The system of claim 1 , comprising, as the metal member housing, a first metal housing configured to house a first metal member and a second metal member housing configured to house a second metal member.

13 . A semiconductor manufacturing method comprising:
housing a substrate in a chamber; housing a metal member in a metal member housing provided outside the chamber; introducing an etching gas into the metal member housing and discharging, from the metal member housing, a metal-containing gas that contains a metal etched from the metal member by the etching gas; and introducing the metal-containing gas discharged from the metal member housing into the chamber, and forming a metal film on the substrate by the metal-containing gas.

14 . The method of claim 13 , wherein the metal member includes a hole through which the etching gas passes.

15 . The method of claim 13 , wherein the metal member contains a group 4, 5 or 6 metal element.

16 . The method of claim 13 , wherein the metal member contains two or more kinds of metal elements.

17 . The method of claim 13 , wherein the metal film contains a metal element that configures the metal member.

18 . The method of claim 13 , wherein the etching gas contains a halogen.

19 . The method of claim 13 , further comprising supplying, to the chamber, a reducing gas that reduces the metal-containing gas.

20 . The method of claim 19 , wherein the reducing gas contains ammonia, monosilane or disilane.

Assignees

• Toshiba Kk

Inventors

• Beppu Takayuki
• Nakajima Kazuaki
• Omoto Seiichi

Classifications

• H10P14/43

  Chemical deposition, e.g. chemical vapour deposition [CVD] · CPC title

• H01J37/32889 Primary

  Connection or combination with other apparatus · CPC title

• H01L21/28556

  Electricity · mapped topic

• H01J2237/334

  Etching · CPC title

• C23C16/18

  from metallo-organic compounds · CPC title