Structures and methods for templated growth of high areal density heat assisted magnetic recording media

Patent metadata

Field	Value
Publication number	US-2016358622-A1
Application number	US-201514728871-A
Country	US
Kind code	A1
Filing date	Jun 2, 2015
Priority date	Jun 2, 2015
Publication date	Dec 8, 2016
Grant date	—

Abstract

Methods are disclosed for increasing areal density in Heat Assisted Magnetic Recording (HAMR) data storage systems by controlling the media layer grain size, grain size distribution, and pitch via templating techniques that are compatible with the high temperature HAMR media deposition. Embodiments include using current HAMR media seed layers as well as additionally introduced interlayers for the templating process. Topographic as well as chemical templating methods are disclosed that may employ nanoimprint technology or nanoparticle self-assembly among other patterning techniques.

First claim

1 . A method for generating high areal density HAMR media using templated growth on a substrate, comprising the steps of:
depositing an underlayer stack, wherein the underlayer stack may comprise a first layer and a second layer on top of the first layer; patterning the second layer in the underlayer stack to form a patterned seed layer; and depositing HAMR magnetic material at high temperatures ranging from 300 to 700° C. onto the patterned seed layer to form a tightly distributed magnetic grain structure, and wherein the deposition process for the magnetic material is shadowed to prevent deposition of magnetic material onto the underlayer stack or onto the first layer of the underlayer stack.

2 . The method of claim 1 , wherein the underlayer stack may comprise one or more of the following materials: (002) magnesium oxide, (002) titanium nitride, both (002) magnesium oxide and (002) titanium nitride, and/or single layers or combinations of materials including (002) strontium titanium-oxide, (002) magnesium titanium-oxide, and/or (002) magnesium oxide-silicon oxide.

3 . The method of claim 2 , wherein the underlayer stack may range from 1 to 70 nm in thickness and is deposited at a temperature ranging from room temperature to 300° C.

4 . The method of claim 1 , wherein the step of patterning the second layer in the underlayer stack to form the patterned seed layer comprises the steps of:
depositing a resist layer; patterning the resist layer; and transferring the pattern in the resist layer to the second layer in the underlayer stack, thereby patterning the second layer in the underlayer stack into a patterned seed layer.

5 . The method of claim 4 , wherein the step of patterning the resist layer comprises imprint lithography.

6 . The method of claim 4 , wherein the steps of depositing the resist layer and patterning the resist layer are replaced by a step of depositing a nanoparticle array layer.

7 . A method for generating high areal density HAMR media using templated growth on a substrate, comprising the steps of:
depositing an underlayer stack, wherein the underlayer stack may comprise a first layer and a second layer on top of the first layer; depositing a metal layer onto the second layer in the underlayer stack at temperatures above 300° C.; patterning the metal layer to form a patterned metal seed layer; and depositing HAMR magnetic material at high temperatures ranging from 300 to 700° C. onto the patterned metal seed layer to form a tightly distributed magnetic grain structure, and wherein the deposition process for the magnetic material is shadowed to prevent deposition of magnetic material onto the underlayer stack.

8 . The method of claim 7 , wherein the underlayer stack may comprise one or more of the following materials: (002) magnesium oxide, (002) titanium nitride, both (002) magnesium oxide and (002) titanium nitride, and/or combinations of materials including (002) strontium titanium-oxide, (002) magnesium titanium-oxide, and/or (002) magnesium oxide-silicon oxide.

9 . The method of claim 8 , wherein the underlayer stack may range from 1 to 70 nm in thickness and is deposited at a temperature ranging from room temperature to 300° C.

10 . The method of claim 7 , wherein the step of patterning the metal layer to form the patterned metal seed layer comprises the steps of:
depositing a resist layer; patterning the resist layer; and transferring the pattern in the resist layer to the metal layer, thereby patterning the metal layer into a patterned metal seed layer.

11 . The method of claim 10 , wherein the step of patterning the resist layer comprises imprint lithography.

12 . The method of claim 10 , wherein the steps of depositing the resist layer and patterning the resist layer are replaced by a step of depositing a nanoparticle array layer.

13 . The method of claim 7 , wherein the depositing the metal layer comprises the steps of:
an optional first step depositing an underlayer of (002)-oriented CrRu, RuAl, CrA, and/or RuA alloys (where A is another metal); and a second step depositing one or more metal layers of (002)-oriented Pt, Pd, Ir, Rh, Os, or FePt, wherein each layer may comprise one or more of these metals; wherein the metal layer deposition is performed at elevated temperatures, typically at least 300° C.

14 . The method of claim 13 , wherein the metal layer may range from 1 to 10 nm in thickness.

15 . A method for generating high areal density HAMR media using hole tone templated growth on a substrate, comprising the steps of:
depositing an underlayer stack, wherein the underlayer stack may comprise a first layer and a second layer on top of the first layer; optionally depositing a metal layer at temperatures above 300° C. onto the second layer in the underlayer stack; depositing a template material layer onto the second layer of the underlayer stack or onto the optional metal layer; patterning the template material layer to form a hole-tone template; and depositing HAMR magnetic material at high temperatures ranging from 300 to 700° C. onto the template layer to form a tightly distributed magnetic grain structure, and the dimensions of the holes in the hole-tone template determine the sizes and shapes of the magnetic grains.

16 . The method of claim 15 , wherein the underlayer stack may comprise one or more of the following materials: (002) magnesium oxide, (002) titanium nitride, both (002) magnesium oxide and (002) titanium nitride, and/or single layers or combinations of materials including (002) strontium titanium-oxide, (002) magnesium titanium-oxide, and/or (002) magnesium oxide-silicon oxide.

17 . The method of claim 16 , wherein the underlayer stack may range from 1 to 70 nm in thickness and is deposited at a temperature ranging from room temperature to 300° C.

18 . The method of claim 15 , wherein the step of patterning the template material layer to form the hole-tone template comprises the steps of:
depositing a resist layer; patterning the resist layer; and transferring the pattern in the resist layer to the template material layer, thereby patterning the template material layer into a hole-tone template.

19 . The method of claim 18 , wherein the step of patterning the resist layer comprises imprint lithography.

20 . The method of claim 18 , wherein the steps of depositing the resist layer and patterning the resist layer are replaced by a step of depositing a nanoparticle array layer.

21 . The method of claim 15 , wherein the optionally depositing the metal layer comprises the steps of:
an optional first step depositing an underlayer of (002)-oriented CrRu, RuAl, CrA, and/or RuA alloys (where A is another metal); and a second step depositing one or more metal layers of (002)-oriented Pt, Pd, Ir, Rh, Os, or FePt, wherein each layer may comprise one or more of these metals; wherein the metal layer deposition is performed at elevated temperatures, typically at least 300° C.

22 . The method of claim 21 , wherein the optional metal layer ranges from 1 to 10 nm in thickness.

23 . The method of claim 15 , further comprising a final step of removing the hole-tone template.

24 . A structure for a heat assisted magnetic recording media, comprising:
a seed layer patterned with pillars; and a layer of magnetic recording material, deposited onto the tops of the pillars in the seed layer; wherein the deposition process is shadowed to prevent de

Assignees

• HGST Netherlands BV

Inventors

• Arora Hitesh
• Gurney Bruce
• Hellwig Olav
• IWATA Jodi Mari
• Santos Tiffany Suzanne
• Weller Dieter K
• ZHU Frank

Classifications

• G11B5/855 Primary

  Coating only part of a support with a magnetic layer · CPC title

• G11B5/746

  Bit Patterned record carriers, wherein each magnetic isolated data island corresponds to a bit · CPC title

• G11B2005/0021

  Thermally assisted recording using an auxiliary energy source for heating the recording layer locally to assist the magnetization reversal · CPC title

• G11B5/84 Primary

  Processes or apparatus specially adapted for manufacturing record carriers · CPC title

• G11B5/66

  the record carriers consisting of several layers · CPC title