Radical generator and molecular beam epitaxy apparatus

Patent metadata

Field	Value
Publication number	US-2016355946-A1
Application number	US-201615242263-A
Country	US
Kind code	A1
Filing date	Aug 19, 2016
Priority date	Aug 27, 2010
Publication date	Dec 8, 2016
Grant date	—

Abstract

A molecular beam epitaxy apparatus includes a radical generator for generating a radical species, a molecular beam cell for generating a molecular beam or an atomic beam, and a vacuum chamber for accommodating a substrate therein, in use, the substrate being irradiated with the radical species and the molecular beam or the atomic beam in vacuum, to thereby form, on the substrate, a crystal of a compound derived from the element of the radical species and the element of the molecular beam or the atomic beam.

First claim

1 . A molecular beam epitaxy apparatus comprising:
a radical generator for generating a radical species, a molecular beam cell for generating a molecular beam or an atomic beam, and a vacuum chamber for accommodating a substrate therein, in use, the substrate being irradiated with the radical species and the molecular beam or the atomic beam in vacuum, to thereby form, on the substrate, a crystal of a compound derived from the element of the radical species and the element of the molecular beam or the atomic beam, the radical generator comprising: a supply tube for supplying a gas; a plasma-generating tube made of a dielectric material, the plasma-generating tube being connected to the supply tube at the downstream end thereof; a coil winding about the outer circumference of the plasma-generating tube, for generating an inductively coupled plasma in the plasma-generating tube; and an electrode which covers the outer wall of the plasma-generating tube and which is disposed between the coil and the supply tube, for generating a capacitively coupled plasma in the plasma-generating tube and adding the capacitively coupled plasma to the inductively coupled plasma.

2 . A molecular beam epitaxy apparatus according to claim 1 , the radical generator further comprising:
a parasitic-plasma-preventing tube which comprises a dielectric material, which is connected to the opening of the supply tube proximal to the connection site between the supply tube and the plasma-generating tube, and which covers the inner wall of the supply tube, wherein the supply tube comprises a conductive material.

3 . A molecular beam epitaxy apparatus according to claim 1 , the radical generator further comprising:
a plurality of permanent magnets which are disposed along the outer circumference of the zone of the plasma-generating tube where a capacitively coupled plasma is generated and which localize the capacitively coupled plasma to the center of the plasma-generating tube.

4 . A molecular beam epitaxy apparatus according to claim 2 , the radical generator further comprising:
a plurality of permanent magnets which are disposed along the outer circumference of the zone of the plasma-generating tube where a capacitively coupled plasma is generated and which localize the capacitively coupled plasma to the center of the plasma-generating tube.

5 . A molecular beam epitaxy apparatus according to claim 3 , wherein the electrode comprises an inner space in which water can be refluxed, and the permanent magnets are disposed so as to be exposed to the inner space of the electrode.

6 . A molecular beam epitaxy apparatus according to claim 4 , wherein the electrode comprises an inner space in which water can be refluxed, and the permanent magnets are disposed so as to be exposed to the inner space of the electrode.

7 . A molecular beam epitaxy apparatus according to claim 1 , wherein the electrode comprises a cylindrical electrode.

8 . A molecular beam epitaxy apparatus according to claim 1 , wherein the radical generator comprises a nitrogen radical generator in which nitrogen is supplied through the supply tube, to thereby generate nitrogen radicals, and a crystal of a nitride compound is grown.

9 . A molecular beam epitaxy apparatus according to claim 2 , wherein the radical generator comprises a nitrogen radical generator in which nitrogen is supplied through the supply tube, to thereby generate nitrogen radicals, and a crystal of a nitride compound is grown.

10 . A molecular beam epitaxy apparatus according to claim 1 , wherein the molecular beam cell generates a molecular beam of a Group III metal, and a crystal of a Group III nitride semiconductor compound is grown.

Assignees

• Nat Univ Corp Nagoya Univ
• Nu Eco Eng Co Ltd
• Katagiri Eng Co Ltd

Inventors

• Hori Masaru
• Amano Hiroshi
• Kano Hiroyuki
• Den Shoji
• Yamakawa Koji

Classifications

• H01J2237/006

  Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece, (H01J37/3244 takes precedence; environmental cells for electron microscopes H01J2237/2003; microscopes with environmental specimen chamber H01J2237/2608) · CPC title

• H01J37/32422

  Arrangement for selecting ions or species in the plasma · CPC title

• C30B23/066

  Heating of the material to be evaporated · CPC title

• H01J37/32091

  the radio frequency energy being capacitively coupled to the plasma · CPC title

• H01J2237/3321

  CVD [Chemical Vapor Deposition] · CPC title