Electronic apparatus and method for fabricating the same
US-2016247776-A1 · Aug 25, 2016 · US
US2016354868A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016354868-A1 |
| Application number | US-201415101306-A |
| Country | US |
| Kind code | A1 |
| Filing date | Dec 1, 2014 |
| Priority date | Dec 3, 2013 |
| Publication date | Dec 8, 2016 |
| Grant date | — |
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Provided is a solder material that has a high melting point and exhibits superior mechanical characteristics, and therefore can form a connecting portion with high heat-resistant reliability.
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1 . A solder material comprising, as a solder alloy, a second alloy obtainable by using a first alloy and a Bi—Ag alloy at a ratio of 5 to 80% by weight for the Bi—Ag alloy relative to a total amount of the first alloy and the Bi—Ag alloy, the first alloy being obtainable by using a Bi—Cu alloy and a Bi—Ge alloy at a ratio of 30 to 70% by weight for the Bi—Cu alloy relative to a total amount of the Bi—Cu alloy and the Bi—Ge alloy, wherein the Bi—Cu alloy consists of 0.2 to 0.8% by weight of Cu and a balance of Bi, the Bi—Ge alloy consists of 0.7 to 1.3% by weight of Ge and a balance of Bi, the Bi—Ag alloy consists of 2.2 to 20.3% by weight of Ag and a balance of Bi, and the second alloy comprises 0.06% by weight or more of Ge. 2 . The solder material according to claim 1 , wherein the Bi—Cu alloy is a Bi—Cu eutectic alloy, the Bi—Ge alloy is a Bi—Ge eutectic alloy, and the Bi—Ag alloy consists of 2.5 to 20% by weight of Ag and a balance of Bi. 3 . The solder material according to claim 1 , comprising, as the solder alloy, instead of the second alloy, a third alloy obtainable by using the second alloy and at least one of Ni and P at a ratio of 0.05 to 2.0% by weight for the at least one of Ni and P relative to a total amount of the second alloy and the at least one of Ni and P. 4 . The solder material according to claim 1 , further comprising, in the solder alloy, at least one of Cu particles and Ni particles having an average particle diameter of 1 to 40 μm at 1 to 20% by weight relative to a total amount of the solder alloy and the at least one of the Cu particles and the Ni particles. 5 . The solder material according to claim 1 , wherein the solder alloy has a solidus-line temperature of 250 to 350° C. 6 . The solder material according to claim 1 , wherein the solder alloy is in a form of particles, and a surface of the particles is coated with a material that has a melting point higher than the solidus-line temperature of the solder alloy. 7 . A connected structure formed by connecting two members with each other between parts for connection of the respective two members by the solder material of claim 1 . 8 . The connected structure according to claim 7 , wherein the parts for connection of the respective two members have an Sn content of less than 0.5% by weight in a material constituting at least a surface part of the parts for connection. 9 . The connected structure according to claim 7 , wherein the part for connection of at least one of the two members is plated with any one selected from a group consisting of Bi plating, Ni plating, Au plating, and Ni-based and Au-flash plating. 10 . The solder material according to claim 2 , comprising, as the solder alloy, instead of the second alloy, a third alloy obtainable by using the second alloy and at least one of Ni and P at a ratio of 0.05 to 2.0% by weight for the at least one of Ni and P relative to a total amount of the second alloy and the at least one of Ni and P. 11 . The solder material according to claim 2 , further comprising, in the solder alloy, at least one of Cu particles and Ni particles having an average particle diameter of 1 to 40 μm at 1 to 20% by weight relative to a total amount of the solder alloy and the at least one of the Cu particles and the Ni particles. 12 . The solder material according to claim 3 , further comprising, in the solder alloy, at least one of Cu particles and Ni particles having an average particle diameter of 1 to 40 μm at 1 to 20% by weight relative to a total amount of the solder alloy and the at least one of the Cu particles and the Ni particles. 13 . The solder material according to claim 2 , wherein the solder alloy has a solidus-line temperature of 250 to 350° C. 14 . The solder material according to claim 3 , wherein the solder alloy has a solidus-line temperature of 250 to 350° C. 15 . The solder material according to claim 4 , wherein the solder alloy has a solidus-line temperature of 250 to 350° C. 16 . The solder material according to claim 2 , wherein the solder alloy is in a form of particles, and a surface of the particles is coated with a material that has a melting point higher than the solidus-line temperature of the solder alloy. 17 . The solder material according to claim 3 , wherein the solder alloy is in a form of particles, and a surface of the particles is coated with a material that has a melting point higher than the solidus-line temperature of the solder alloy. 18 . The solder material according to claim 4 , wherein the solder alloy is in a form of particles, and a surface of the particles is coated with a material that has a melting point higher than the solidus-line temperature of the solder alloy. 19 . The solder material according to claim 5 , wherein the solder alloy is in a form of particles, and a surface of the particles is coated with a material that has a melting point higher than the solidus-line temperature of the solder alloy.
comprising gold [Au] · CPC title
Encapsulations, e.g. protective coatings · CPC title
Die-attach connectors and bond wires · CPC title
between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title
the connected ends being wedge-shaped · CPC title
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