Engineered-phosphor led packages and related methods
US-2015357533-A1 · Dec 10, 2015 · US
US2016351761A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016351761-A1 |
| Application number | US-201615236898-A |
| Country | US |
| Kind code | A1 |
| Filing date | Aug 15, 2016 |
| Priority date | Nov 4, 2013 |
| Publication date | Dec 1, 2016 |
| Grant date | — |
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Small LED sources with high brightness and high efficiency apparatus including the small LED sources and methods of using the small LED sources are disclosed.
Opening claim text (preview).
What is claimed is: 1 . A light emitting diode (LED) device comprising: a submount; at least one pump LED, grown on a substrate, wherein the LED comprises a light-emitting active region comprising a base area; a color-converting material overlying the at least one pump light-emitting diode; and at least one flat emitting surface having an emitting area and emitting substantially white light; wherein the area of the at least one flat emitting surface is characterized by an area less than 250 μm×250 μm, and a surface brightness of 800 mW/mm 2 or more; wherein the LED device is characterized by a wall-plug efficiency of at least 25%. 2 . The LED device of claim 1 , wherein the substrate comprises a bulk III-nitride-containing compound. 3 . The LED device of claim 1 , wherein the at least one pump LED is configured to emit violet light. 4 . The LED device of claim 1 , wherein the at least one pump LED is configured to emit blue light. 5 . The LED device of claim 1 , wherein the at least one flat emitting surface emits light characterized by a CCT in a range from about 2000K to about 10000K. 6 . The LED device of claim 1 , wherein the at least one LED is configured to be driven at a current density in a range of about 100 A/cm 2 to about 1000 A/cm 2 . 7 . The LED device of claim 1 , wherein light emitted by the LED device exhibits a gamut of at least 70% of NTSC gamut. 8 . The LED device of claim 1 , wherein the at least one LED comprises a flip-chip configuration. 9 . The LED device of claim 1 , wherein the base area is characterized by a base shape that is substantially rectilinear. 10 . The LED device of claim 1 , wherein the submount is characterized by a reflectivity higher than 80% within at least a wavelength in a range of 400 nm to 700 nm. 11 . The LED device of claim 1 , further comprising at least one reflective material in proximity to at least one of the at least one LED and in proximity to the color conversion material. 12 . The LED device of claim 11 , wherein the reflective material is characterized by a reflectivity higher than 90% within at least a wavelength in a range of 400 nm to 700 nm. 13 . The LED device of claim 11 , comprising an air gap between the reflective material and at least one of the at least one LED and the color conversion material. 14 . The LED device of claim 13 , wherein at least one of the reflective material or the submount forms a diffuse reflector. 15 . The LED device of claim 14 , wherein at least one of the reflective material or the submount comprises a metal material. 16 . The LED device of claim 14 , wherein at least one of the reflective material or the submount comprises a dielectric stack. 17 . The LED device of claim 1 , wherein a combined thickness of the submount, the at least one LED, and the light-converting material is less than 1 mm. 18 . A light emitting diode (LED) device comprising a LED, wherein the LED comprises: a base area less than 250 μm×250 μm; and an emitting surface comprising an emitting area configured to emit substantially white light; wherein the emitting surface is characterized by a surface brightness of 800 mW/mm 2 or more; and wherein at least 80% of the base area is used for light generation. 19 . A light emitting diode (LED) device comprising: at least one pump LED, wherein the at least one pump LED comprises: a base area; a color-converting material overlying the at least one pump LED; and at least one emitting surface configured to emit substantially white light, wherein, the at least one emitting surface has an area less than 250 μm×250 μm; is characterized by a surface brightness of 800 mW/mm 2 or more; and the at least one pump LED is characterized by a wall-plug efficiency of at least 25%; and a display component wherein the at least one pump light-emitting diode is coupled to the display component. 20 . The LED device of claim 19 , wherein the display component comprises a flat panel display.
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Reflective coatings, e.g. dielectric Bragg reflectors · CPC title
containing nitrogen, e.g. GaN · CPC title
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