Light emitting diode chip having wavelength converting layer and method of fabricating the same, and package having the light emitting diode chip and method of fabricating the same

Patent metadata

Field	Value
Publication number	US-2016351759-A1
Application number	US-201615236125-A
Country	US
Kind code	A1
Filing date	Aug 12, 2016
Priority date	May 18, 2010
Publication date	Dec 1, 2016
Grant date	—

Abstract

A light-emitting diode (LED) includes a substrate, a semiconductor stacked structure disposed on the substrate, the semiconductor stacked structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, a wavelength converting layer configured to convert a wavelength of light emitted from the semiconductor stacked structure, the wavelength converting layer covering side surfaces of the substrate and the semiconductor stacked structure, and a distributed Bragg reflector (DBR) configured to reflect at least a portion of light wavelength-converted by the wavelength converting layer, in which at least a portion of the DBR is covered with a metal layer configured to reflect light transmitted through the DBR.

First claim

What is claimed is:

1 . light-emitting diode (LED), comprising:
a substrate; a semiconductor stacked structure disposed on the substrate, the semiconductor stacked structure comprising a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer; a wavelength converting layer configured to convert a wavelength of light emitted from the semiconductor stacked structure, the wavelength converting layer covering side surfaces of the substrate and the semiconductor stacked structure; and a distributed Bragg reflector (DBR) configured to reflect at least a portion of light wavelength-converted by the wavelength converting layer, wherein at least a portion of the DBR is covered with a metal layer configured to reflect light transmitted through the DBR.

2 . The LED of claim 1 , further comprising:
a first electrode disposed on the semiconductor stacked structure and electrically connected to the first conductivity-type semiconductor layer; and a second electrode disposed on the semiconductor stacked structure and electrically connected to the second conductivity-type semiconductor layer.

3 . The LED of claim 1 , further comprising:
a first insulating layer disposed on the semiconductor stacked structure; and a second insulating layer disposed on the first insulating layer, wherein the first insulating layer comprises the DBR.

4 . The LED of claim 3 , wherein at least a portion of a side surface of the second insulating layer contacts the wavelength converting layer.

5 . The LED of claim 3 , wherein a side surface of the second insulating layer is substantially flush with the side surface of the semiconductor stacked structure.

6 . The LED of claim 2 , further comprising:
a first insulating layer disposed on the semiconductor stacked structure; and a second insulating layer disposed on the first insulating layer, wherein the first insulating layer comprises the DBR, and wherein the first insulating layer contacts a side surface of the second electrode and a side surface of the active layer.

7 . The LED of claim 3 , further comprising a transparent conductive layer disposed between the first insulating layer and the semiconductor stacked structure.

8 . A light-emitting diode (LED) module, comprising:
a mount; and an LED disposed on the mount, the LED comprising:
a substrate;
a semiconductor stacked structure disposed on the substrate, the semiconductor stacked structure comprising a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer;
a wavelength converting layer configured to convert a wavelength of light emitted from the semiconductor stacked structure, the wavelength converting layer covering side surfaces of the substrate and the semiconductor stacked structure; and
a distributed Bragg reflector (DBR) configured to reflect at least a portion of light wavelength-converted by the wavelength converting layer,
wherein at least a portion of the DBR is covered with a metal layer configured to reflect light transmitted through the DBR.

9 . The LED module claim 8 , wherein the mount comprises at least one of a printed circuit board, a lead frame, and a ceramic substrate.

10 . The LED module of claim 9 , wherein the mount further comprises lead terminals,
wherein the lead terminals are electrically connected to the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer.

11 . The LED module of claim 8 , further comprising a transparent resin disposed on the semiconductor stacked structure,
wherein a portion of the wavelength converting layer is disposed between the semiconductor stacked structure and the transparent resin.

12 . The LED module of claim 11 , wherein the transparent resin is further disposed on the side surface of the semiconductor stacked structure,
wherein at least a portion of the wavelength converting layer is disposed between the semiconductor stacked structure and the transparent resin.

13 . The LED module of claim 11 , wherein the transparent resin comprises at least one of TiO 2 , SiO 2 , and Y 2 O 3 .

14 . The LED module of claim 8 , further comprising:
a first electrode disposed on the semiconductor stacked structure and electrically connected to the first conductivity-type semiconductor layer; and a second electrode disposed on the semiconductor stacked structure and electrically connected to the second conductivity-type semiconductor layer.

15 . The LED module of claim 14 , wherein the first electrode comprises a lower electrode and an upper electrode disposed on the lower electrode.

16 . The LED module of claim 8 , further comprising:
a first insulating layer disposed on the semiconductor stacked structure; and a second insulating layer disposed on the first insulating layer, wherein the first insulating layer comprises the DBR.

17 . The LED module of claim 15 , further comprising:
a first insulating layer disposed on the semiconductor stacked structure; and a second insulating layer disposed on the first insulating layer, wherein the first insulating layer comprises the DBR, and wherein at least a portion of the lower electrode passes through the first insulating layer and is electrically connected to the first conductivity-type semiconductor layer.

18 . The LED module of claim 15 , further comprising:
a first insulating layer disposed on the semiconductor stacked structure; and a second insulating layer disposed on the first insulating layer, wherein the first insulating layer comprises the DBR, and wherein at least a portion of the second electrode passes through the second insulating layer and is electrically connected to the second conductivity-type semiconductor layer.

19 . The LED module of claim 14 , further comprising a transparent conductive layer disposed between the second conductivity-type semiconductor layer and the second electrode.

Assignees

• Seoul Semiconductor Co Ltd

Inventors

• Jung Jung Hwa
• Kim Bang Hyun

Classifications

• H10W90/754

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/00

  Package configurations · CPC title

• H10H20/84

  Coatings, e.g. passivation layers or antireflective coatings · CPC title

• H10H20/854

  characterised by their material, e.g. epoxy or silicone resins · CPC title

• H10H20/851

  Wavelength conversion means · CPC title