Electro-optical device and electronic apparatus

Patent metadata

Field	Value
Publication number	US-2016351600-A1
Application number	US-201615098687-A
Country	US
Kind code	A1
Filing date	Apr 14, 2016
Priority date	May 26, 2015
Publication date	Dec 1, 2016
Grant date	—

Abstract

An electro-optical device includes a substrate, a transistor over the substrate, a pixel electrode over the transistor, a source line between the transistor and the pixel electrode, a fixed potential line over the substrate, a first capacitive element comprising a first electrode electrically connected to the fixed potential line, a first capacitance film, and a second electrode, a second capacitive element comprising the second electrode, a second capacitance film, and a third electrode electrically connected to the fixed potential line, a third capacitive element comprising the fixed potential line, a third capacitance film, and a fourth electrode. The first capacitive element and the second capacitive element are provided between the transistor and the source line, and the third capacitive element is provided between the source line and the pixel electrode.

First claim

What is claimed is:

1 . An electro-optical device comprising:
a substrate; a transistor over the substrate; a pixel electrode over the transistor; a source line between the transistor and the pixel electrode; a fixed potential line over the substrate, the fixed potential line is supplied a fixed potential; a first capacitive element comprising a first electrode electrically connected to the fixed potential line, a first capacitance film, and a second electrode; a second capacitive element comprising the second electrode, a second capacitance film, and a third electrode electrically connected to the fixed potential line; and a third capacitive element comprising the fixed potential line, a third capacitance film, and a fourth electrode, wherein the first capacitive element and the second capacitive element are positioned between the transistor and the source line, and wherein the third capacitive element is positioned between the source line and the pixel electrode.

2 . An electro-optical device comprising:
a substrate; a transistor over the substrate; a pixel electrode over the transistor; a source line between the transistor and the pixel electrode; a fixed potential line over the substrate, the fixed potential line is supplied a fixed potential; a first capacitive element comprising a first electrode electrically connected to the fixed potential line, a first capacitance film, and a second electrode; a second capacitive element comprising the second electrode, a second capacitance film, and a third electrode electrically connected to the fixed potential line; and a third capacitive element comprising the fixed potential line, a third capacitance film, and the pixel electrode, wherein the first capacitive element and the second capacitive element are positioned between the transistor and the source line, and wherein the third capacitive element is positioned between the source line and the pixel electrode.

3 . An electro-optical device comprising:
a substrate; a transistor over the substrate; a pixel electrode over the transistor; a source line that between the transistor and the pixel electrode; a fixed potential line over the substrate, the fixed potential line is supplied a fixed potential; a first capacitive element comprising a first electrode electrically connected to the fixed potential line, a first capacitance film, and a second electrode; a second capacitive element comprising the second electrode, a second capacitance film, and a third electrode electrically connected to the fixed potential line; and a third capacitive element comprising a fixed potential branch line that is electrically connected to the fixed potential line and is formed on a different layer from the fixed potential line through an insulation film, a third capacitance film, and the pixel electrode, wherein the first capacitive element and the second capacitive element are positioned between the transistor and the source line from the substrate side, and wherein the third capacitive element is positioned between the source line and the pixel electrode from the substrate side.

4 . The electro-optical device according to claim 3 ,
wherein the fixed potential line is formed along an extending direction of the source line, and wherein the fixed potential branch line is formed in a direction intersecting the fixed potential line.

5 . The electro-optical device according to claim 2 ,
wherein the pixel electrode is a transparent conductive material.

6 . An electronic apparatus comprising:
the electro-optical device according to claim 1 .

7 . An electronic apparatus comprising:
the electro-optical device according to claim 2 .

8 . An electronic apparatus comprising:
the electro-optical device according to claim 3 .

9 . An electronic apparatus comprising:
the electro-optical device according to claim 4 .

10 . An electronic apparatus comprising:
the electro-optical device according to claim 5 .

Assignees

• Seiko Epson Corp

Inventors

• Moriwaki Minoru

Classifications

• H10D86/441

  Interconnections, e.g. scanning lines · CPC title

• H10D86/421

  having a particular composition, shape or crystalline structure of the active layer · CPC title

• H10D30/6745

  Polycrystalline or microcrystalline silicon · CPC title

• H10D30/6731

  Top-gate only TFTs · CPC title

• H10D30/6715

  characterised by the doping profiles, e.g. having lightly-doped source or drain extensions · CPC title