Ion beam etching apparatus and ion beam generator

Patent metadata

Field	Value
Publication number	US-2016351377-A1
Application number	US-201615084593-A
Country	US
Kind code	A1
Filing date	Mar 30, 2016
Priority date	Jun 1, 2015
Publication date	Dec 1, 2016
Grant date	—

Abstract

An ion beam etching apparatus includes: a processing chamber connected to the plasma generation chamber including an internal space; a plasma generating unit configured to generate plasma in the internal space; an extracting unit configured to extract ions from the plasma, from the internal space to the processing chamber, the extracting unit including first, second and a third electrodes, each of which has a plurality of ion passage holes; a first ring member provided closer to the plasma generation chamber; a second ring member provided closer to the processing chamber; a fixing member having one end and another end, the fixing member penetrating the first, second and third electrodes, and having the one end connected to the first ring member and the other end connected to the second ring member; and a heating unit configured to heat the third electrode from outside of the plasma generation chamber.

First claim

What is claimed is:

1 . An ion beam etching apparatus comprising:
a plasma generation chamber including an internal space; a processing chamber connected to the plasma generation chamber; a plasma generating unit configured to generate plasma in the internal space; an extracting unit configured to extract ions from the plasma, from the internal space to the processing chamber, the extracting unit including a first electrode, a second electrode and a third electrode, each of which has a plurality of ion passage holes for passing the ions, the first electrode being provided closest to the plasma generation chamber, the second electrode being provided closer to the processing chamber than the first electrode, the third electrode being provided closest to the processing chamber; a first ring member provided closer to the plasma generation chamber than the first electrode, the first ring member overlapping with a peripheral portion of the first electrode outside a region where the plurality of ion passage holes in the first electrode are formed, such that the plurality of ion passage holes formed in the first electrode are exposed through the first ring member; a second ring member provided closer to the processing chamber than the third electrode, the second ring member overlapping with a peripheral portion of the third electrode outside a region where the plurality of ion passage holes in the third electrode are formed, such that the plurality of ion passage holes formed in the third electrode are exposed through the second ring member; a fixing member having one end and another end, the fixing member penetrating the first electrode, the second electrode and the third electrode, and having the one end connected to the first ring member and the other end connected to the second ring member; a heating unit configured to heat the third electrode from outside of the plasma generation chamber; and a substrate holder provided in the processing chamber and capable of holding a substrate, the substrate holder being provided to receive the ions extracted by the extracting unit.

2 . The ion beam etching apparatus according to claim 1 ,
wherein the first, second and third electrodes are each provided with a plurality of through-holes, through each of which the fixing member penetrates, in a region on the outside from the region where the plurality of ion passage holes are formed, and wherein the fixing member is fixed to the first ring member and the second ring member by penetrating through the through-holes in the first, second and third electrodes and thereby connecting the first ring member to the second ring member.

3 . The ion beam etching apparatus according to claim 1 ,
wherein the heating unit heats the second ring member.

4 . The ion beam etching apparatus according to claim 1 , further comprising:
an adhesion prevention cover provided so as to cover the heating unit.

5 . The ion beam etching apparatus according to claim 2 ,
wherein an opening into which the fixing member is inserted is formed in at least one of the first ring member and the second ring member, wherein the opening has a shape in which a width in a radial direction of the ring member is longer than a width in a circumferential direction of the ring member, and wherein the shape allows the fixing member to slide in the opening.

6 . An ion beam generator comprising:
a plasma generation chamber including an internal space; a plasma generating unit configured to generate plasma in the internal space; an extracting unit configured to extract ions from the plasma, from the internal space to an outside of the plasma generation chamber, the extracting unit including a first electrode, a second electrode and a third electrode, each of which has a plurality of ion passage holes for passing the ions and which are arranged along a predetermined direction such that surfaces where the ion passage holes are formed face each other, the first electrode being provided closest to the plasma generation chamber, the third electrode being provided farthest from the plasma generation chamber along the predetermined direction and the second electrode being provided between the first electrode and the third electrode; a first ring member provided closer to the plasma generation chamber than the first electrode, the first ring member overlapping with a peripheral portion of the first electrode outside a region where the plurality of ion passage holes in the first electrode are formed, such that the plurality of ion passage holes formed in the first electrode are exposed through the first ring member; a second ring member provided farther from the plasma generation chamber along the predetermined direction than the third electrode, the second ring member overlapping with a peripheral portion of the third electrode outside the region where the plurality of ion passage holes in the third electrode are formed, such that the plurality of ion passage holes formed in the third electrode are exposed through the second ring member; a fixing member having one end and another end, the fixing member penetrating the first electrode, the second electrode and the third electrode, and having the one end connected to the first ring member and the other end to the second ring member; and a heating unit configured to heat the third electrode from outside of the plasma generation chamber.

Assignees

• Canon Anelva Corp

Inventors

• Okamoto Naoyuki
• Kodaira Yoshimitsu
• Yasumatsu Yasushi

Classifications

• H01J37/32522

  Temperature · CPC title

• H01J37/32422

  Arrangement for selecting ions or species in the plasma · CPC title

• H01J37/32357 Primary

  Generation remote from the workpiece, e.g. down-stream · CPC title

• H01J37/32532 Primary

  Electrodes · CPC title

• H01J37/32715

  Workpiece holder · CPC title