Semiconductor device production composition and pattern formation method

Patent metadata

Field	Value
Publication number	US-2016349616-A1
Application number	US-201615235471-A
Country	US
Kind code	A1
Filing date	Aug 12, 2016
Priority date	Mar 12, 2014
Publication date	Dec 1, 2016
Grant date	—

Abstract

A semiconductor device production composition comprises a product obtained by mixing a metal compound and a compound represented by Formula (1) in a first organic solvent, and a second organic solvent. R and R′ each independently represent a hydrogen atom, a linear or cyclic alkyl group having a carbon number of 2 to 20, a linear or cyclic alkylcarbonyl group having a carbon number of 2 to 20, an aryl group having a carbon number of 6 to 20, or an aryloxy group having a carbon number of 6 to 20, and part of the hydrogen atoms in the cyclic alkyl, cyclic alkylcarbonyl, aryl, or aryloxy group are substituted or unsubstituted.
R—O—O—R′  (1)

First claim

1 . A semiconductor device production composition, comprising:
a product obtained by mixing a metal compound and a compound represented by Formula (1) in a first organic solvent; and a second organic solvent:
R—O—O—R′  (1)

wherein, in Formula (1), R and R′ each independently represent a hydrogen atom, a linear or cyclic alkyl group having a carbon number of 2 to 20, a linear or cyclic alkylcarbonyl group having a carbon number of 2 to 20, an aryl group having a carbon number of 6 to 20, or an aryloxy group having a carbon number of 6 to 20, and part of the hydrogen atoms in the cyclic alkyl, cyclic alkylcarbonyl, aryl, or aryloxy group are unsubstituted or substituted with substituent groups.

2 . The semiconductor device production composition according to claim 1 , wherein the product is prepared by further mixing a compound represented by Formula (2):
R′X) n   (2)
wherein, in Formula (2), R 1 represents a n-valent organic group; X represents —OH, —COOH, —NCO, or —NR a R b ; R a and R b each independently represent a hydrogen atom or a monovalent organic group; n is an integer of 2 to 4; and each X is the same as or different from each other.

3 . The semiconductor device production composition according to claim 1 , wherein the metal compound is represented by Formula (3):
[M La Xb]  (3)
wherein, in Formula (3), M represents a titanium atom, an aluminum atom, a zirconium atom, a tantalum atom, a hafnium atom, a molybdenum atom, or a tungsten atom; L represents a multidentate ligand; a is an integer of 1 to 3; when a is 2 or more, each L is the same as or different from each other; X represents a halogen ligand, a hydroxo ligand, a carboxy ligand, an alkoxy ligand, a carboxylate ligand, or an amide ligand; b is an integer of 2 to 6; each X is the same as or different form each other; and a+b is 7 or less.

4 . The semiconductor device production composition according to claim 1 , wherein each of R and R′ in Formula (1) is a hydrogen atom.

5 . The semiconductor device production composition according to claim 1 , further comprising water, wherein a weight of the second organic solvent is larger than a weight of the water.

6 . The semiconductor device production composition according to claim 1 , wherein the first organic solvent is the same as the second organic solvent.

7 . The semiconductor device production composition according to claim 1 , for use in a multilayer resist process.

8 . The semiconductor device production composition according to claim 2 , wherein the metal compound is represented by Formula (3):
[M La Xb]  (3)
wherein, in Formula (3), M represents a titanium atom, an aluminum atom, a zirconium atom, a tantalum atom, a hafnium atom, a molybdenum atom, or a tungsten atom; L represents a multidentate ligand; a is an integer of 1 to 3; when a is 2 or more, each L is the same as or different from each other; X represents a halogen ligand, a hydroxo ligand, a carboxy ligand, an alkoxy ligand, a carboxylate ligand, or an amide ligand; b is an integer of 2 to 6; each X is the same as or different form each other; and a+b is 7 or less.

9 . The semiconductor device production composition according to claim 2 , wherein each of R and R′ in Formula (1) is a hydrogen atom.

10 . The semiconductor device production composition according to claim 2 , further comprising water, wherein a weight of the second organic solvent is larger than a weight of the water.

11 . The semiconductor device production composition according to claim 8 , wherein each of R and R′ in Formula (1) is a hydrogen atom.

12 . The semiconductor device production composition according to claim 8 , further comprising water, wherein a weight of the second organic solvent is larger than a weight of the water.

13 . A pattern formation method, comprising:
applying the semiconductor device production composition according to claim 1 onto a top face of a substrate to form a coated film on the top face of the substrate; forming a resist pattern on a top face of the coated film; and forming a pattern on the substrate by dry-etching the coated film one or more times, using the resist pattern as a mask.

14 . The pattern formation method according to claim 13 , wherein the forming of the resist pattern comprises:
forming an antireflective film on the coated film; and forming the resist pattern on the antireflective film laminated.

15 . The pattern formation method according to claim 13 , further comprising:
forming a resist lower-layer film on the substrate, wherein the semiconductor device production composition is applied on the resist lower-layer film.

Assignees

• Jsr Corp

Inventors

• Nakagawa Hisashi
• Saitou Ryuichi
• Kurita Shunsuke
• Sakai Tatsuya

Classifications

• H10P50/287

  by chemical means · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P76/4085

  characterised by the processes involved to create the masks · CPC title

• H10P76/405

  characterised by their composition, e.g. multilayer masks · CPC title

• H10P50/73

  using masks for insulating materials · CPC title