Flexible pressure sensor using amorphous metal and flexible bimodal sensor for simultaneously sensing pressure and temperature

US2016349134A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2016349134-A1
Application numberUS-201615166824-A
CountryUS
Kind codeA1
Filing dateMay 27, 2016
Priority dateMay 29, 2015
Publication dateDec 1, 2016
Grant date

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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Abstract

Official abstract text for this publication.

Provided are a flexible pressure sensor using an amorphous metal and a flexible bimodal sensor for simultaneously sensing a pressure and a temperature. The sensors according to an exemplary embodiment of the present invention include a conductive layer formed of the amorphous metal to have stretchable characteristics so that it may be used for an electronic skin. Therefore, these sensors may firmly maintain conductivity and sense a pressure or simultaneously sense a pressure and a temperature even in a state in which various kinds of physical external force are present. In addition, the flexible bimodal sensor according to an exemplary embodiment of the present invention is a novel element for an electronic skin that may simultaneously sense a pressure and a temperature using the amorphous metal.

First claim

Opening claim text (preview).

What is claimed is: 1 . A flexible pressure sensor comprising: a flexible substrate having a plurality of micro-sized structure bodies formed of a flexible material on one surface thereof; a conductive layer deposited on one surface of the flexible substrate on which the plurality of micro-sized structure bodies are formed and formed of an amorphous metal; and a counter electrode positioned on the conductive layer, wherein the flexible pressure sensor is configured to measure a resistance value generated by a change in a contact area between the counter electrode and the conductive layer depending on a pressure transferred from the outside through the conductive layer and the counter electrode to sense information on the transferred pressure. 2 . The flexible pressure sensor of claim 1 , wherein the counter electrode is entirely formed of the amorphous metal, or has a structure in which a flexible insulating substrate and a metal layer formed of an amorphous metal on one surface of the flexible insulating substrate are stacked, and the metal layer is positioned on the conductive layer so as to face the conductive layer. 3 . The flexible pressure sensor of claim 1 , wherein the plurality of micro-sized structure bodies have any one of a pyramidal shape, a cylindrical shape, a conical shape, and a poly-prismatic shape. 4 . The flexible pressure sensor of claim 1 , wherein the amorphous metal is any one of FeZr, CoNi, La—Al_Cu, Al—Sc, ZrTiCuNiBe, AuSi, CuZr, CuPd, CuCo, CuPdCoP, PdAgSi, PdAgSiP, PdAgSiGe, PtCuAgPBSi, CuZrTi, CuZrTiNi, and CuZrTiAlBe. 5 . The flexible pressure sensor of claim 1 , wherein a passivation layer formed of any one of a low resistance metal, a crystalline metal, and an oxidation resistant metal is additionally deposited on the conductive layer in order to increase conductivity of the conductive layer and prevent oxidation of the conductive layer. 6 . A flexible pressure sensor comprising: a flexible substrate having a plurality of micro-sized structure bodies formed of a flexible material on one surface thereof; a conductive layer deposited on an opposite surface to one surface of the flexible substrate on which the plurality of micro-sized structure bodies are formed and formed of an amorphous metal; and a counter electrode positioned on the plurality of micro-sized structure bodies on the flexible substrate and formed of an amorphous metal, wherein the flexible pressure sensor is configured to measure a capacitance value between the conductive layer and the counter electrode changed by a change in a distance between the conductive layer and the counter electrode depending on a pressure transferred from the outside to sense information on the transferred pressure. 7 . The flexible pressure sensor of claim 6 , wherein the amorphous metal is any one of FeZr, CoNi, La—Al_Cu, Al—Sc, ZrTiCuNiBe, AuSi, CuZr, CuPd, CuCo, CuPdCoP, PdAgSi, PdAgSiP, PdAgSiGe, PtCuAgPBSi, CuZrTi, CuZrTiNi, and CuZrTiAlBe. 8 . The flexible pressure sensor of claim 6 , wherein a passivation layer formed of any one of a low resistance metal, a crystalline metal, and an oxidation resistant metal is additionally deposited on surfaces of the conductive layer and the counter electrode formed of the amorphous metals in order to increase conductivity of the conductive layer and the counter electrode and prevent oxidation of the conductive layer and the counter electrode. 9 . A flexible bimodal sensor comprising: a flexible substrate having a plurality of micro-sized structure bodies formed of a flexible material on one surface thereof; a conductive layer deposited on one surface of the flexible substrate on which the plurality of micro-sized structure bodies are formed and formed of an amorphous metal; a counter electrode positioned on the conductive layer and formed of an amorphous metal; a flexible insulating substrate positioned on an upper surface of the counter electrode; and a conducting wire repeatedly arranged in a zigzag pattern at a predetermined interval on an upper surface of the flexible insulating substrate and formed of an amorphous metal, wherein the flexible bimodal sensor measures a resistance value between the counter electrode and the conductive layer changed by a change in a contact area between the counter electrode and the conductive layer depending on a pressure transferred from the outside to sense information on the transferred pressure, and measures a resistance value of the conducting wire changed depending on a temperature transferred from the outside to sense information on the transferred temperature. 10 . The flexible bimodal sensor of claim 9 , wherein the amorphous metal is any one of FeZr, CoNi, La—Al_Cu, Al—Sc, ZrTiCuNiBe, AuSi, CuZr, CuPd, CuCo, CuPdCoP, PdAgSi, PdAgSiP, PdAgSiGe, PtCuAgPBSi, CuZrTi, CuZrTiNi, and CuZrTiAlBe. 11 . The flexible bimodal sensor of claim 9 , wherein a passivation layer formed of any one of a low resistance metal, a crystalline metal, and an oxidation resistant metal is additionally deposited on surfaces of the conductive layer, the counter electrode, and the conducting wire formed of the amorphous metals in order to increase conductivity of the conductive layer, the counter electrode, and the conducting wire and prevent oxidation of the conductive layer, the counter electrode, and the conducting wire.

Assignees

Inventors

Classifications

  • Pressure sensors for measuring the pressure or force exerted on the touch surface without providing the touch position · CPC title

  • using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material · CPC title

  • Computer-aided surgery; Manipulators or robots specially adapted for use in surgery · CPC title

  • G01L1/14Primary

    by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators · CPC title

  • Sensing device · CPC title

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What does patent US2016349134A1 cover?
Provided are a flexible pressure sensor using an amorphous metal and a flexible bimodal sensor for simultaneously sensing a pressure and a temperature. The sensors according to an exemplary embodiment of the present invention include a conductive layer formed of the amorphous metal to have stretchable characteristics so that it may be used for an electronic skin. Therefore, these sensors may fi…
Who is the assignee on this patent?
Univ Korea Res & Bus Found
What technology area does this patent fall under?
Primary CPC classification G01L1/14. Mapped technology areas include Physics.
When was this patent published?
Publication date Thu Dec 01 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).