Method and apparatus for manufacturing silicon carbide substrate

Patent metadata

Field	Value
Publication number	US-2016348274-A1
Application number	US-201514724628-A
Country	US
Kind code	A1
Filing date	May 28, 2015
Priority date	May 28, 2015
Publication date	Dec 1, 2016
Grant date	—

Abstract

A method for manufacturing a silicon carbide substrate is a method for manufacturing a silicon carbide semiconductor substrate, in which epitaxial growth is carried out in a reaction chamber, and includes the steps of arranging a base substrate composed of silicon carbide in the reaction chamber and forming an epitaxially grown film on the base substrate. In the step of forming an epitaxially grown film, the base substrate is heated while a reaction gas in which a first gas containing ammonia and a second gas containing a halide but not containing ammonia have been mixed with each other is supplied toward the base substrate. The first gas is mixed with the second gas after the first gas is heated no that ammonia contained in the first gas can be thermally decomposed.

First claim

What is claimed:

1 . A method for manufacturing a silicon carbide substrate, in which epitaxial growth is carried out in a reaction chamber, comprising the steps of:
arranging a base substrate composed of silicon carbide in said reaction chamber; and forming an epitaxially grown film on said base substrate, in said step of forming an epitaxially grown film,
said base substrate being heated while a reaction gas in which a first gas containing ammonia and a second gas containing a halide but not containing ammonia have been mixed with each other is supplied toward said base substrate, and
said first gas being mixed with said second gas after said first gas is heated so that ammonia contained in said first gas can be thermally decomposed.

2 . The method for manufacturing a silicon carbide substrate according to claim 1 , wherein
in said step of forming an epitaxially grown film, said base substrate is heated while said base substrate is arranged inside said reaction chamber, and outside said reaction chamber, said first gas is mixed with said second gas.

3 . The method for manufacturing a silicon carbide substrate according to claim 2 , wherein
outside said reaction chamber, said first gas is heated so that ammonia contained in said first gas can be thermally decomposed.

4 . The method for manufacturing a silicon carbide substrate according to claim 1 , wherein
in said step of forming an epitaxially grown film, said base substrate is heated while the base substrate is arranged inside said reaction chamber, and inside said reaction chamber, said first gas is mixed with said second gas.

5 . The method for manufacturing a silicon carbide substrate according to claim 4 , wherein
inside said reaction chamber, said first gas is heated so that ammonia contained in said first gas can be thermally decomposed.

6 . The method for manufacturing a silicon carbide substrate according to claim 1 , wherein
said halide contains chlorite.

7 . The method for manufacturing a silicon carbide substrate according to claim 1 , wherein
said halide contains silicon.

8 . The method for a manufacturing a silicon carbide substrate according to claim 1 , wherein
said halide includes at least one of HCl, Si 2 Cl 6 , SiH 2 Cl 2 , SiCl 4 , and CH 3 SiCl 3 .

9 . An apparatus for manufacturing a silicon carbide substrate, comprising:
a reaction chamber for arranging a base substrate composed of silicon carbide in inside; a heater for heating said base substrate; and a gas supplier for supplying a reaction gas for forming an epitaxially grown film on said base substrate into the inside of said reaction chamber, said gas supplier being structured to be able to supply said reaction gas in which a first gas containing ammonia and a second gas containing a halide but not containing ammonia have been mixed with each other into the inside of said reaction chamber, and structured to be able to mix said first gas with said second gas after said first gas is heated so that ammonia contained in said first gas can be thermally decomposed.

10 . The apparatus for manufacturing a silicon carbide substrate according to claim 9 , wherein
said gas supplier includes a pre-heater arranged outside said reaction chamber, for heating said first gas so that ammonia contained in said first gas can be thermally decomposed.

11 . The apparatus for manufacturing a silicon carbide substrate according to claim 9 , wherein
said gas supplier includes a first gas pipe having a portion located inside said reaction chamber, for supplying said first gas into the inside of said reaction chamber and a second gas pipe for supplying said second gas into the inside of said reaction chamber.

12 . The apparatus for manufacturing a silicon carbide substrate according to claim 9 , wherein
said halide contains chlorine.

13 . The apparatus for manufacturing a silicon carbide substrate according to claim 9 , wherein
said halide contains silicon.

14 . The apparatus for manufacturing a silicon carbide substrate according to claim 9 , wherein
said halide includes at least one of HCl, Si 2 Cl 6 , SiH 2 Cl 2 , SiHCl 3 , SiCl 4 , and CH 3 SiCl 3 .

Assignees

• Sumitomo Electric Industries

Inventors

• Genba Jun
• Nishiguchi Taro

Classifications

• C23C16/46

  characterised by the method used for heating the substrate (C23C16/48, C23C16/50 take precedence) · CPC title

• C30B29/36

  Carbides · CPC title

• C23C16/325

  Silicon carbide · CPC title

• C23C16/45514

  Mixing in close vicinity to the substrate · CPC title

• C30B25/08 Primary

  Reaction chambers; Selection of materials therefor · CPC title