Semiconductor light emitting devices including red phosphors that exhibit good color rendering properties and related red phosphors
US-9219202-B2 · Dec 22, 2015 · US
US2016348000A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016348000-A1 |
| Application number | US-201615234433-A |
| Country | US |
| Kind code | A1 |
| Filing date | Aug 11, 2016 |
| Priority date | Nov 17, 2008 |
| Publication date | Dec 1, 2016 |
| Grant date | — |
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A method is disclosed for forming a blended phosphor composition. The method includes the steps of firing precursor compositions that include europium and nitrides of at least calcium, strontium and aluminum, in a refractory metal crucible and in the presence of a gas that precludes the formation of nitride compositions between the nitride starting materials and the refractory metal that forms the crucible. The resulting compositions can include phosphors that convert frequencies in the blue portion of the visible spectrum into frequencies in the red portion of the visible spectrum.
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1 . A phosphor composition comprising: Ca 1-x-y Sr x Eu y AlSiN 3 , where 0<x<1 and 0<y<1; and silicon oxynitride in an amount of at least 1% by weight. 2 . The phosphor composition of claim 1 , wherein the silicon oxynitride comprises silicon aluminum oxynitride. 3 . The phosphor composition of claim 2 , wherein the silicon aluminum oxynitride comprises Si 2 Al 4 O 4 N 4 . 4 . The phosphor composition of claim 1 , wherein x is between 0.50 and 0.70. 5 . The phosphor composition of claim 4 , wherein x is between about 0.55 and 0.67. 6 . The phosphor composition of claim 1 , wherein y is between about 0.013 and 0.017. 7 . The phosphor composition of claim 1 , further comprising aluminum nitride. 8 . The phosphor composition of claim 1 that absorbs frequencies of between about 430 and 480 nanometers and emits peak frequencies of between about 530 and 750 nanometers. 9 . A phosphor composition comprising: a first phase comprising Ca 1-x-y Sr x Eu y AlSiN 3 , where 0<x<1 and 0<y<1; and a second phase comprising silicon aluminum oxynitride. 10 . The phosphor composition of claim 9 , wherein the silicon aluminum oxynitride comprises Si 2 Al 4 O 4 N 4 . 11 . The phosphor composition of claim 9 , wherein the silicon aluminum oxynitride is present in an amount of at least 1% by weight. 12 . The phosphor composition of claim 9 , further comprising a third phase comprising aluminum nitride. 13 . The phosphor composition of claim 9 , wherein x is between 0.50 and 0.70. 14 . The phosphor composition of claim 13 , wherein x is between about 0.55 and 0.67. 15 . The phosphor composition of claim 9 , wherein y is between about 0.013 and 0.017. 16 . The phosphor composition of claim 9 that absorbs frequencies of between about 430 and 480 nanometers and emits peak frequencies of between about 530 and 750 nanometers.
Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides · CPC title
based on borides, nitrides, {i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides} or silicides {(containing free binder metal C22C29/00)} · CPC title
containing inorganic luminescent materials · CPC title
Aluminium nitrides · CPC title
Arsenides; Nitrides; Phosphides · CPC title
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