Film forming composition containing fluorine-containing surfactant

Patent metadata

Field	Value
Publication number	US-2016347965-A1
Application number	US-201515116550-A
Country	US
Kind code	A1
Filing date	Jan 30, 2015
Priority date	Feb 12, 2014
Publication date	Dec 1, 2016
Grant date	—

Abstract

A film with reduced formation of an edge reservoir at a periphery of a film in which the edge reservoir causes an unnecessary residue that cannot be removed by an etching process, and a method for forming the film. A film forming composition for use in a lithography process includes a surfactant containing a polymer and an oligomer having a C 3-5 perfluoroalkyl partial structure. The perfluoroalkyl partial structure may further include an alkyl partial structure. The surfactant is contained in an amount of 0.0001% by mass to 1.5% by mass based on the total solid content of the film forming composition. The film forming composition further includes a coating film resin, the coating film resin is a novolac resin, a condensation epoxy resin, a (meth)acylic resin, a polyether-based resin, or a silicon-containing resin, etc. The formed film can be used as a resist underlayer film or a resist overlayer film.

First claim

1 . A film forming composition for use in a lithography process, the film forming composition comprising a surfactant containing a polymer and an oligomer having a C 3-5 perfluoroalkyl partial structure.

2 . The film forming composition according to claim 1 , wherein the perfluoroalkyl partial structure has a carbon number of 4.

3 . The film forming composition according to claim 1 , wherein the perfluoroalkyl partial structure may further include an alkyl partial structure.

4 . The film forming composition according to claim 1 , wherein the polymer and the oligomer are a (meth)acrylate polymer and a (meth)acrylate oligomer, respectively.

5 . The film forming composition according to claim 1 , wherein the surfactant is contained in an amount of 0.0001% by mass to 1.5% by mass based on the total solid content of the film forming composition.

6 . The film forming composition according to claim 1 , further comprising a coating film resin.

7 . The film forming composition according to claim 6 , wherein the coating film resin is a novolac resin, a condensation epoxy resin, a (meth)acylic resin, a polyether-based resin, or a silicon-containing resin.

8 . The film forming composition according to claim 1 , wherein a film is a resist underlayer film or a resist overlayer film.

9 . A method for manufacturing a semiconductor device, the method comprising:
a process of forming an underlayer film on a semiconductor substrate by use of the film forming composition as claimed in claim 1 ; a process of forming a resist film on the underlayer film; a process of forming a resist pattern by irradiation with light, EUV, or an electron beam and development; a process of etching the underlayer film by use of the formed resist pattern; and a process of processing the semiconductor substrate by use of the patterned underlayer film.

10 . A method for manufacturing a semiconductor device, the method comprising:
a process of forming an underlayer film on a semiconductor substrate by use of the film forming composition as claimed in claim 1 ; a process of forming a hard mask on the underlayer film; a process of further forming a resist film on the hard mask; a process of forming a resist pattern by irradiation with light, EUV, or an electron beam and development; a process of etching the hard mask by use of the formed resist pattern; a process of etching the underlayer film by use of the patterned hard mask; and a process of processing the semiconductor substrate by use of the patterned underlayer film.

11 . A method for manufacturing a semiconductor device, the method comprising:
a process of forming an organic underlayer film on a semiconductor substrate; a process of applying the film forming composition as claimed in claim 1 onto the organic underlayer film and baking the composition to form a resist underlayer film; a process of applying a composition for a resist on the resist underlayer film to form a resist film; a process of exposing the resist film with light, EUV, or an electron beam; a process of developing the resist film after exposure to obtain a resist pattern; a process of etching the resist underlayer film by use of the resist pattern; a process of etching the organic underlayer film by use of the patterned resist underlayer film; and a process of processing the semiconductor substrate by use of the patterned organic underlayer film.

12 . A method for manufacturing a semiconductor device, the method comprising:
a process of forming a resist film on a semiconductor substrate; a process of applying the film forming composition as claimed in claim 1 onto the resist film and baking the composition to form a resist overlayer film; a process of exposing the semiconductor substrate, covered with the resist overlayer film and the resist film, with light, EUV, or an electron beam; and a process of performing development after exposure to remove the resist overlayer film and the resist film.

Assignees

• Nissan Chemical Ind Ltd

Inventors

• Umezaki Makiko
• Karasawa Ryo
• Shigaki Shuhei
• Mizuochi Ryuta

Classifications

• H10P76/2043

  using an anti-reflective coating · CPC title

• G03F7/30

  Imagewise removal using liquid means · CPC title

• C08L33/14

  of esters containing halogen, nitrogen, sulfur, or oxygen atoms in addition to the carboxy oxygen · CPC title

• G03F7/0752

  in non photosensitive layers or as additives, e.g. for dry lithography · CPC title

• G03F7/094

  Multilayer resist systems, e.g. planarising layers · CPC title