Method for manufacturing resistive element, method for manufacturing pressure sensor element, pressure sensor element, pressure sensor, altimeter, electronic apparatus, and moving object

Patent metadata

Field	Value
Publication number	US-2016347604-A1
Application number	US-201615165040-A
Country	US
Kind code	A1
Filing date	May 26, 2016
Priority date	May 29, 2015
Publication date	Dec 1, 2016
Grant date	—

Abstract

A method for manufacturing a resistive element includes: preparing a substrate including an n-type silicon layer; doping the silicon layer with an impurity to thereby form a resistive region; heat-treating the resistive region by any of rapid thermal annealing, flash lamp annealing, and excimer laser annealing; and epitaxially growing silicon on the resistive region to thereby form a covering layer.

First claim

What is claimed is:

1 . A method for manufacturing a resistive element, comprising:
preparing a substrate including a silicon layer including an n-type or p-type region; doping the region with an impurity to thereby form a resistive region; heat-treating the resistive region by any of rapid thermal annealing, flash lamp annealing, and excimer laser annealing; and epitaxially growing silicon on the resistive region to thereby form a covering layer.

2 . The method for manufacturing a resistive element according to claim 1 , wherein
in the forming of the covering layer, the epitaxial growth is performed using disilane gas.

3 . The method for manufacturing a resistive element according to claim 1 , wherein
in the heat-treating of the resistive region, the thickness of the resistive region after the heat treatment is in the range of from 0.1 to 2.0 μm.

4 . The method for manufacturing a resistive element according to claim 1 , wherein
in the forming of the covering layer, the thickness of the covering layer is in the range of from 0.05 to 0.4 μm.

5 . A method for manufacturing a pressure sensor element, comprising:
forming a resistive element using the method for manufacturing a resistive element according to claim 1 ; and etching one surface side of the substrate to thereby form a diaphragm portion provided with the resistive element.

6 . A pressure sensor element comprising a diaphragm portion, the diaphragm portion including
a silicon layer, a resistive element including a resistive region including carriers in the silicon layer, the resistive element generating an electric signal in response to strain, and a covering layer on the resistive region, wherein the thickness of the resistive region is in the range of from 5 to 30% with respect to the thickness of the diaphragm portion, and a distance between a surface of the diaphragm portion on the covering layer side and a peak position of a carrier concentration of the resistive region is in the range of from 2 to 40% with respect to the thickness of the diaphragm portion.

7 . The pressure sensor element according to claim 6 , further comprising a pressure reference chamber provided on the covering layer side.

8 . The pressure sensor element according to claim 6 , wherein
the thickness of the diaphragm portion is in the range of from 0.5 to 15 μm.

9 . The pressure sensor element according to claim 7 , wherein
the thickness of the resistive region is in the range of from 0.1 to 2.0 μm.

10 . The pressure sensor element according to claim 6 , wherein
a distance between the surface of the diaphragm portion on the covering layer side and the peak position of a carrier concentration of the resistive region is in the range of from 0.05 to 0.4 μm.

11 . The pressure sensor element according to claim 6 , further comprising a substrate including the diaphragm portion and a circuit portion.

12 . A pressure sensor comprising the pressure sensor element according to claim 6 .

13 . A pressure sensor comprising the pressure sensor element according to claim 7 .

14 . A pressure sensor comprising the pressure sensor element according to claim 8 .

15 . An altimeter comprising the pressure sensor element according to claim 6 .

16 . An altimeter comprising the pressure sensor element according to claim 7 .

17 . An electronic apparatus comprising the pressure sensor element according to claim 6 .

18 . An electronic apparatus comprising the pressure sensor element according to claim 7 .

19 . A moving object comprising the pressure sensor element according to claim 6 .

20 . A moving object comprising the pressure sensor element according to claim 7 .

Assignees

• Seiko Epson Corp

Inventors

• Shimada Hiroyuki

Classifications

• H10P30/204

  into Group IV semiconductors · CPC title

• H10P30/21

  of electrically active species · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title

• H10P14/20

  of semiconductor materials · CPC title

• B81B2207/07

  Interconnects · CPC title