Semiconductor power conversion apparatus and output current control method

Patent metadata

Field	Value
Publication number	US-2016344304-A1
Application number	US-201414397614-A
Country	US
Kind code	A1
Filing date	Jan 21, 2014
Priority date	Jan 21, 2014
Publication date	Nov 24, 2016
Grant date	—

Abstract

Provided is a semiconductor power conversion apparatus that includes: a semiconductor power converter that performs power conversion by using switching elements and supplies power to a load; a converter-voltage command calculation unit that outputs a voltage command value Vref that controls the semiconductor power converter; a voltage control unit that superimposes a second voltage command value on the voltage command value Vref to generate a voltage command value Vref 2 ; a PWM-signal generation unit that generates a gate signal for controlling driving of the switching elements based on the voltage command value Vref 2 and outputs the gate signal; and a bypass unit that is connected to the semiconductor power converter in parallel with the load and branches a current of a frequency of the second voltage command value off from an output current Iout that is output from the semiconductor power converter to the load.

First claim

1 . A semiconductor power conversion apparatus comprising:
a power converter that performs power conversion by using a switching element and supplies power to a load; a converter-voltage command calculation unit that outputs a first voltage command value that controls the power converter; a voltage control unit that superimposes a second voltage command value on the first voltage command value to generate a third voltage command value; a PWM-signal generation unit that generates a gate signal for controlling driving of the switching element based on the third voltage command value and outputs the gate signal to the power converter; and a bypass unit that is connected to the power converter in parallel with the load and branches a current with a frequency of the second voltage command value off from an output current that is output from the power converter to the load.

2 . The semiconductor power conversion apparatus according to claim 1 , wherein
the voltage control unit obtains the second voltage command value based on a difference between an output current value from the power converter and a target current value that is a target value of the output current value.

3 . The semiconductor power conversion apparatus according to claim 1 , wherein
the voltage control unit
estimates an output current value from the power converter by using the first voltage command value and impedance information of the load, and
obtains the second voltage command value based on a difference between a target current value that is a target value of the output current value and an estimated output current value.

4 . The semiconductor power conversion apparatus according to claim 1 , wherein
the bypass unit is an LC resonant circuit including an inductor and a capacitor, and an LC resonant frequency of the LC resonant circuit is the frequency of the second voltage command value.

5 . The semiconductor power conversion apparatus according to claim 1 , wherein
in a case where an inductor is connected between the power converter and the load, the bypass unit is provided with a capacitor to constitute an LC resonant circuit by the inductor and the capacitor, and an LC resonant frequency of the LC resonant circuit is the frequency of the second voltage command value.

6 . The semiconductor power conversion apparatus according to claim 1 , wherein
the frequency of the second voltage command value falls in a frequency band that is larger than an operating frequency band of the power converter and is smaller than a carrier frequency band caused by switching of the switching element.

7 . The semiconductor power conversion apparatus according to claim 1 , wherein
the switching element is of a wide band-gap semiconductor.

8 . A semiconductor power conversion apparatus comprising:
a power converter that performs power conversion by using a switching element and supplies power to a load; a converter-voltage command calculation unit that outputs a first voltage command value that controls the power converter; a voltage control unit that superimposes a second voltage command value on the first voltage command value to generate a third voltage command value; and a PWM-signal generation unit that
generates a gate signal for controlling driving of the switching element based on the third voltage command value and
outputs the gate signal to the power converter, wherein
a current corresponding to the second voltage command value is branched off from output currents, which are output from the power converter to the load, by a bypass unit that is connected to the power converter in parallel with the load.

9 . The semiconductor power conversion apparatus according to claim 8 , wherein
the voltage control unit obtains the second voltage command value based on a difference between an output current value from the power converter and a target current value that is a target value of the output current value.

10 . The semiconductor power conversion apparatus according to claim 8 , wherein
the voltage control unit
estimates an output current value from the power converter by using the first voltage command value and impedance information of the load, and
obtains the second voltage command value based on a difference between a target current value that is a target value of the output current value and an estimated output current value.

11 . The semiconductor power conversion apparatus according to claim 8 , wherein
the frequency of the second voltage command value falls in a frequency band that is larger than an operating frequency band of the power converter and is smaller than a carrier frequency band caused by switching of the switching element.

12 . The semiconductor power conversion apparatus according to claim 8 , wherein
the switching element is of a wide band-gap semiconductor.

13 . A semiconductor power conversion apparatus comprising:
a gate-signal generation unit that generates and outputs a gate signal for controlling a switching element; a switching element that operates according to the input gate signal; and a power converter that outputs an AC current having
a frequency component within a first frequency band in which a load is operated and
a frequency component in a second frequency band, which is different from the first frequency band and is branched off by a bypass unit that is connected in parallel to the load, wherein
when the frequency component in the first frequency band decreases, the frequency component in the second frequency band is increased, and when the frequency component in the first frequency band increases, the frequency component in the second frequency band is decreased.

14 . The semiconductor power conversion apparatus according to claim 13 , wherein
the switching element is of a wide band-gap semiconductor.

15 .- 19 . (canceled)

Assignees

• Mitsubishi Electric Corp

Inventors

• Ichihara Masafumi

Classifications

• H02M1/126

  using passive filters · CPC title

• H02M7/5395 Primary

  by pulse-width modulation · CPC title

• H02M2001/0009

  Electricity · mapped topic

• H02M1/08

  Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters · CPC title

• H02M7/48 Primary

  using discharge tubes with control electrode or semiconductor devices with control electrode · CPC title