Oled display device and manufacture method thereof

Patent metadata

Field	Value
Publication number	US-2016343785-A1
Application number	US-201514424965-A
Country	US
Kind code	A1
Filing date	Feb 9, 2015
Priority date	Dec 8, 2014
Publication date	Nov 24, 2016
Grant date	—

Abstract

The present invention provides an OLED display device and a manufacture method thereof, and the OLED display device comprises a first substrate ( 100 ), a second substrate ( 200 ) spaced and oppositely located with the first substrate ( 100 ), a plurality of thin film transistors ( 101 ) located at an inner surface of the first substrate ( 100 ), a transparent anode ( 201 ) located at an inner surface of the second substrate ( 200 ), a plurality of partition walls ( 202 ) located on the transparent anode ( 201 ), transmission holes ( 203 ) formed among the partition walls ( 202 ), an organic layer ( 204 ) located on the transparent anode ( 201 ) and in the transmission holes ( 203 ), a metal cathode ( 205 ) located on the organic layer ( 204 ) and the partition walls ( 202 ), and the metal cathode ( 205 ) is electrically connected to a drain of the thin film transistor ( 101 ). The OLED display device possesses a high aperture ratio and high transmittance. The manufacture method of the OLED display device provided by the present invention can manufacture an OLED display device with a high aperture ratio and high transmittance, and promote the yield and the productivity.

First claim

What is claimed is:

1 . An OLED display device, comprising: a first substrate, a second substrate spaced and oppositely located with the first substrate, a plurality of thin film transistors located at an inner surface of the first substrate, a transparent anode located at an inner surface of the second substrate, a plurality of partition walls located on the transparent anode, transmission holes formed among the partition walls, an organic layer located on the transparent anode and in the transmission holes, a metal cathode located on the organic layer and the partition walls, and the metal cathode is electrically connected to a drain of the thin film transistor.

2 . The OLED display device according to claim 1 , wherein the thin film transistor comprises a gate, a source metal layer and a drain metal layer, and a thickness of the source metal layer is smaller than a thickness of the drain metal layer; a passivation layer is further located on the source metal layer, the drain metal layer and the first substrate, and the passivation layer comprises a concave area and a convex area adjacent to the concave area, and a bottom of the concave area is aligned with a top surface of the drain metal layer and higher than a top surface of the source metal layer to expose a part of the drain metal layer, and the metal anode on the organic layer correspondingly joints into the concave area and fits the bottom of the concave area, and the metal cathode is connected to the drain metal layer via the concave area.

3 . The OLED display device according to claim 1 , wherein material of the transparent anode is Indium Tin Oxide.

4 . The OLED display device according to claim 1 , wherein material of the metal cathode is one of calcium, aluminum and magnesium.

5 . The OLED display device according to claim 1 , wherein the organic layer comprises a Hole Transporting Layer contacting the transparent anode, an Electron Transport Layer contacting the metal cathode and an emitting layer located between the Hole Transporting Layer and the Electron Transport Layer.

6 . A manufacture method of an OLED display device, comprising steps of:
step 1 , forming thin film transistors, comprising a gate, a source metal layer, a drain metal layer on a first substrate, wherein a thickness of the source metal layer is smaller than a thickness of the drain metal layer; step 2 , forming a passivation layer on the source metal layer, the drain metal layer and the first substrate, and a concave area of the passivation layer and a convex area adjacent to the concave area is formed by a formation process; wherein a bottom of the concave area is aligned with a top surface of the drain metal layer and higher than a top surface of the source metal layer to expose a part of the drain metal layer; step 3 , forming a transparent anode on a second substrate; step 4 , forming partition walls on the transparent anode, and the partition walls comprise a plurality of transmission holes corresponding to all pixel areas; step 5 , forming an organic layer in the transmission holes on the transparent anode; step 6 , forming a metal cathode on the organic layer and the partition walls; step 7 , laminating the first substrate and the second substrate, and the metal anode on the organic layer correspondingly joints into the concave area and fits the bottom of the concave area, and the metal cathode is connected to the drain metal layer via the concave area.

7 . The manufacture method of the OLED display device according to claim 6 , wherein as manufacturing respective elements, the concave area of the passivation layer is designed to correspond to a position of the metal cathode on the organic layer, and an area of the concave area is larger than or equal to an area of the metal cathode on the organic layer, and the metal cathode on the organic layer can be completely jointed in the concave area of the passivation layer as oppositely assembling the first substrate and the second substrate.

8 . The manufacture method of the OLED display device according to claim 6 , wherein in the step 3 , material of the transparent anode is Indium Tin Oxide.

9 . The manufacture method of the OLED display device according to claim 6 , wherein in the step 6 , material of the metal cathode is one of calcium, aluminum and magnesium.

10 . The manufacture method of the OLED display device according to claim 6 , wherein in the step 5 , the organic layer comprises a Hole Transporting Layer contacting the transparent anode, an Electron Transport Layer contacting the metal cathode and an emitting layer located between the Hole Transporting Layer and the Electron Transport Layer.

11 . An OLED display device, comprising: a first substrate, a second substrate spaced and oppositely located with the first substrate, a plurality of thin film transistors located at an inner surface of the first substrate, a transparent anode located at an inner surface of the second substrate, a plurality of partition walls located on the transparent anode, transmission holes formed among the partition walls, an organic layer located on the transparent anode and in the transmission holes, a metal cathode located on the organic layer and the partition walls, and the metal cathode is electrically connected to a drain of the thin film transistor;
wherein the thin film transistor comprises a gate, a source metal layer and a drain metal layer, and a thickness of the source metal layer is smaller than a thickness of the drain metal layer; a passivation layer is further located on the source metal layer, the drain metal layer and the first substrate, and the passivation layer comprises a concave area and a convex area adjacent to the concave area, and a bottom of the concave area is aligned with a top surface of the drain metal layer and higher than a top surface of the source metal layer to expose a part of the drain metal layer, and the metal anode on the organic layer correspondingly joints into the concave area and fits the bottom of the concave area, and the metal cathode is connected to the drain metal layer via the concave area; wherein the organic layer comprises a Hole Transporting Layer contacting the transparent anode, an Electron Transport Layer contacting the metal cathode and an emitting layer located between the Hole Transporting Layer and the Electron Transport Layer.

12 . The OLED display device according to claim 11 , wherein material of the transparent anode is Indium Tin Oxide.

13 . The OLED display device according to claim 11 , wherein material of the metal cathode is one of calcium, aluminum and magnesium.

Assignees

• Shenzhen China Star Optoelect

Inventors

• Shi Longqiang
• Wang Yifan

Classifications

• H10K59/8052

  Cathodes · CPC title

• H10K59/8051

  Anodes · CPC title

• H01L51/56

  Electricity · mapped topic

• H01L27/3248

  Electricity · mapped topic

• H01L2251/301

  Electricity · mapped topic