Semiconductor device for optical applications and method of producing such a semiconductor device

Patent metadata

Field	Value
Publication number	US-2016343757-A1
Application number	US-201515114387-A
Country	US
Kind code	A1
Filing date	Jan 14, 2015
Priority date	Jan 27, 2014
Publication date	Nov 24, 2016
Grant date	—

Abstract

A sensor ( 2 ) is arranged at a main surface ( 10 ) of a semiconductor substrate ( 1 ), and a filter ( 3 ) is arranged above the sensor. A through-substrate via ( 4 ) penetrates the substrate outside the region of the sensor. A semiconductor body is applied above the main surface and then partially removed at least in an area above the sensor. A portion of the semiconductor body remains above the through-substrate via as a frame layer ( 5 ). The filter is on a level with the frame layer.

First claim

1 . A semiconductor device, comprising:
a semiconductor substrate with a main surface; a sensor arranged in the substrate at the main surface; a filter arranged above the sensor; a through-substrate via penetrating the substrate outside the sensor, a frame layer arranged above the main surface above the through-substrate via, the frame layer not covering the filter; and the filter being on a level with the frame layer.

2 . The semiconductor device of claim 1 , wherein the frame layer is a silicon layer.

3 . The semiconductor device of claim 1 , further comprising:
a dielectric layer on the main surface, the filter and the frame layer being arranged on the dielectric layer.

4 . The semiconductor device of claim 3 , further comprising:
a metal layer arranged in the dielectric layer; a contact area of the metal layer between the through-substrate via and the frame layer, and a metal layer of the through-substrate via contacting the contact area.

5 . The semiconductor device of claim 3 , further comprising:
a passivation layer arranged in the dielectric layer, comprising a material different from the dielectric layer, and comprising an opening between the sensor and the filter.

6 . The semiconductor device of claim 1 , wherein the sensor is an optical sensor and the filter is an optical filter.

7 . A method of producing a semiconductor device, comprising:
arranging a sensor at a main surface of a semiconductor substrate; arranging a filter above the sensor; forming a through-substrate via penetrating the substrate outside the sensor; applying a semiconductor body above the main surface; and partially removing the semiconductor body at least in an area above the sensor, a portion of the semiconductor body remaining above the through-substrate via.

8 . The method of claim 7 , further comprising:
providing the semiconductor body with a recess; applying the semiconductor body with the recess facing the sensor; and thinning the semiconductor body from a side opposite the substrate until the recess is reached and the area above the sensor is uncovered.

9 . The method of claim 8 , further comprising:
arranging the filter above the sensor before the semiconductor body is applied; and applying the semiconductor body with the recess facing the sensor such that the filter is accommodated in the recess.

10 . The method of claim 7 , wherein the filter is arranged above the sensor after the semiconductor body has partially been removed.

11 . The method of claim 10 , further comprising:
after applying and before partially removing the semiconductor body, applying a mask that is open in the area above the sensor; and using the mask for partially removing the semiconductor body by etching, the portion remaining above the through-substrate via being covered by the mask.

12 . The method of claim 10 , further comprising:
applying a sacrificial layer on the portion of the semiconductor body remaining above the through-substrate via; applying a filter layer on the sacrificial layer and the area above the sensor; and removing the sacrificial layer together with a portion of the filter layer, a remaining portion of the filter layer forming the filter.

13 . A semiconductor device, comprising:
a semiconductor substrate with a main surface; a sensor arranged in the substrate at the main surface; a filter arranged above the sensor; a through-substrate via penetrating the substrate outside the sensor; a frame layer arranged above the main surface above the through-substrate via, the frame layer not covering the filter and the filter being on a level with the frame layer; a dielectric layer on the main surface, the filter and the frame layer being arranged on the dielectric layer; a metal layer arranged in the dielectric layer; a contact area of the metal layer between the through-substrate via and the frame layer; and a further metal layer of the through-substrate via contacting the contact area.

Assignees

• Ams Ag

Inventors

• Enichlmair Hubert
• Schrank Franz

Classifications

• H10W20/216

  characterised by dielectric material at least partially filling the via holes, e.g. covering the through-semiconductor vias in the via holes · CPC title

• H10W20/0242

  comprising etching via holes from the back sides of the chips, wafers or substrates · CPC title

• H10W20/0234

  comprising etching via holes that stop on pads or on electrodes · CPC title

• H10W20/20

  Interconnections within wafers or substrates, e.g. through-silicon vias [TSV] · CPC title

• H01L27/14625 Primary

  Electricity · mapped topic