Method of preparing laminate, and method of separating support

Patent metadata

Field	Value
Publication number	US-2016343601-A1
Application number	US-201615137899-A
Country	US
Kind code	A1
Filing date	Apr 25, 2016
Priority date	May 21, 2015
Publication date	Nov 24, 2016
Grant date	—

Abstract

A method of preparing a laminate, in which the laminate has a substrate and a support plate, and is provided with a release layer capable of being altered by irradiation with infrared ray, the method including forming the release layer on only a periphery of one of the substrate and the support plate; and laminating the substrate and the support plate through the release layer and a first adhesive layer.

First claim

What is claimed is:

1 . A method of preparing a laminate, in which the laminate has a substrate and a support supporting the substrate, a release layer capable of being altered by irradiation with infrared ray is provided on one surface of the surface of the substrate and the surface of the support which face each other, and the substrate and the support are laminated through a first adhesive layer containing a release agent, the method comprising:
forming the release layer on only a periphery of one of the substrate and the support; and laminating the substrate and the support through the release layer and the first adhesive layer.

2 . The method of preparing a laminate according to claim 1 , comprising applying a release layer-forming composition for forming a release layer onto only the periphery of one of the substrate and the support in order to form the release layer on only a periphery of one of the substrate and the support.

3 . The method of preparing a laminate according to claim 1 , comprising forming the release layer on only the periphery of the support.

4 . The method of preparing a laminate according to claim 1 , wherein, in the forming of the release layer, the release layer is formed on the periphery of one of the substrate and the support, the periphery having a width in a range of 0.5 mm to 10 mm in a direction from an end thereof toward an inside thereof.

5 . The method of preparing a laminate according to claim 1 , comprising, before laminating the substrate and the support, forming a second adhesive layer not containing a release agent on the substrate.

6 . The method of preparing a laminate according to claim 1 , wherein the support is made of silicon.

7 . A method of separating a support, comprising:
preparing a laminate by the method of preparing a laminate according to claim 1 ; irradiating the release layer with infrared ray to alter the release layer, so as to reduce the adhesive force of the release layer; fixing one of the substrate and the support; and applying a force to the other of the substrate and the support, so as to separate the support from the substrate.

8 . A method of separating a support, comprising:
preparing a laminate by the method of preparing a laminate according to claim 6 ; irradiating the release layer with infrared ray through the support to alter the release layer, so as to reduce the adhesive force of the release layer; fixing one of the substrate and the support; and applying a force to the other thereof, so as to separate the support from the substrate.

9 . The method of separating a support according to claim 7 , comprising irradiating the release layer with a carbonate laser to alter the release layer.

10 . The method of separating a support according to claim 8 , comprising irradiating the release layer with a carbonate laser to alter the release layer.

11 . The method of separating a support according to claim 7 , which is a support separating method of separating a laminate in which an end of the periphery of the support is chamfered, comprising gripping the chamfered portion of the end of the periphery of the support by a gripping member and then applying a force thereto, so as to separate the support from the substrate.

12 . The method of separating a support according to claim 8 , which is a support separating method of separating a laminate in which an end of the periphery of the support is chamfered, comprising gripping the chamfered portion of the end of the periphery of the support by a gripping member and then applying a force thereto, so as to separate the support from the substrate.

13 . The method of separating a support according to claim 9 , which is a support separating method of separating a laminate in which an end of the periphery of the support is chamfered, comprising gripping the chamfered portion of the end of the periphery of the support by a gripping member and then applying a force thereto, so as to separate the support from the substrate.

14 . The method of separating a support according to claim 10 , which is a support separating method of separating a laminate in which an end of the periphery of the support is chamfered, comprising gripping the chamfered portion of the end of the periphery of the support by a gripping member and then applying a force thereto, so as to separate the support from the substrate.

15 . The method of separating a support according to claim 2 , wherein the release layer-forming composition contains reactive polysilsesquioxane.

Assignees

• Tokyo Ohka Kogyo Co Ltd

Inventors

• Ishida Shingo
• Yoshioka Takahiro

Classifications

• H10P72/7448

  the bond interface between the auxiliary support and the wafer comprising two or more, e.g. multilayer adhesive or adhesive and release layer · CPC title

• H10P72/7416

  used during dicing or grinding · CPC title

• H10P72/7412

  the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support · CPC title

• H10P72/744

  Details of chemical or physical process used for separating the auxiliary support from a device or a wafer · CPC title

• H10P72/74 Primary

  using temporarily an auxiliary support · CPC title