Tag with a non-metallic metasurface that converts incident light into elliptically or circularly polarized light regardless of polarization state of the incident light

US2016341859A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2016341859-A1
Application numberUS-201514719414-A
CountryUS
Kind codeA1
Filing dateMay 22, 2015
Priority dateMay 22, 2015
Publication dateNov 24, 2016
Grant date

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  1. Title

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  5. First independent claim

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  6. CPC / IPC classifications

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Abstract

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An optical device for generating narrow-band circularly and elliptically polarized radiation, either by conversion from externally incident light or through thermal emission of heated objects. The optical device includes a metasurface comprised of unit cells, where each unit cell contains structural elements or features that break two mirror inversion symmetries of the unit cell and couple bright and dark resonances. In this manner, the optical device emits circularly polarized radiation that does not exhibit a preference for right-hand circularly polarized light or left-hand circularly polarized light incident upon it. As a result, multiple of such optical devices with different unit cell sizes, geometries and dimensions of the intra-cell elements may be implemented as a tag that thermally emits different states of circularly polarized radiation confined to multiple spectrally-narrow bands. Since the optical device can be fabricated in CMOS, the tag can be used for preventing/identifying tampering with genuine electronic components.

First claim

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1 . An optical device comprising: a substrate; and a non-metallic metasurface positioned on top of said substrate, wherein said metasurface comprises a plurality of unit cells, wherein each of said plurality of unit cells comprises structural elements or features that break two mirror inversion symmetries of said unit cell and couple bright and dark resonances. 2 . The optical device as recited in claim 1 , wherein each of said plurality of unit cells is comprised of a single straight silicon nanorod and a single bent silicon nanorod, wherein said bend in said bent silicon nanorod is responsible for breaking two mirror inversion symmetries of said unit cell and coupling bright and dark resonances. 3 . The optical device as recited in claim 1 , wherein said metasurface generates a circularly polarized radiation by conversion from an externally incident light or through a thermal emission of heated objects. 4 . The optical device as recited in claim 3 , wherein said optical device is utilized as a tag, wherein said tag comprises a plurality of pixels, wherein each of said pixels comprises said plurality of unit cells. 5 . The optical device as recited in claim 4 , wherein said generated circularly polarized radiation for each pixel does not exhibit a preference for the incident right-hand circularly polarized light or left-hand circularly polarized light. 6 . The optical device as recited in claim 4 , wherein said circularly polarized radiation is confined to multiple spectral bands. 7 . The optical device as recited in claim 4 , wherein each of said plurality of unit cells for each of said pixels is comprised of a single straight silicon nanorod and a single bent silicon nanorod, wherein said bend in said bent silicon nanorod is responsible for breaking two mirror inversion symmetries of said unit cell and coupling bright and dark resonances, wherein dimensions of each of said single straight silicon nanorod and said single bent silicon nanorod are based on a wavelength of said externally incident light or based on a wavelength of a thermally emitted light. 8 . The optical device as recited in claim 4 , wherein a thickness of said metasurface is based on a wavelength of said externally incident light or based on a wavelength of a thermally emitted light. 9 . The optical device as recited in claim 4 , wherein a wavelength of said externally incident light or a wavelength of a thermally emitted light is between approximately 1 micrometer and approximately 100 micrometers. 10 . The optical device as recited in claim 1 , wherein a transmitted radiation of said metasurface is circular polarized for an unpolarized incident light. 11 . The optical device as recited in claim 10 , wherein a state of said circular polarization is based on a position of a bend of said bent silicon nanorod. 12 . The optical device as recited in claim 11 , wherein said state of said circular polarization is one of the following: left circular polarization and right circular polarization. 13 . The optical device as recited in claim 1 , wherein said metasurface exhibits planar chirality. 14 . The optical device as recited in claim 1 , wherein a thickness of said metasurface is between approximately 200 nanometers and approximately 2.5 micrometers. 15 . The optical device as recited in claim 1 , wherein said metasurface generates an elliptic polarized radiation.

Assignees

Inventors

Classifications

  • Nanooptics, e.g. quantum optics or photonic crystals · CPC title

  • Bent wire, i.e. having nonliner longitudinal axis · CPC title

  • for controlling or changing the state of polarisation, e.g. transforming one polarisation state into another (G02B5/3083 takes precedence; light guide coupling means utilising polarising elements G02B6/34) · CPC title

  • G02B5/3025Primary

    Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state (G02B5/3008, G02B5/3016 take precedence) · CPC title

  • made of materials engineered to provide properties not available in nature, e.g. metamaterials · CPC title

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What does patent US2016341859A1 cover?
An optical device for generating narrow-band circularly and elliptically polarized radiation, either by conversion from externally incident light or through thermal emission of heated objects. The optical device includes a metasurface comprised of unit cells, where each unit cell contains structural elements or features that break two mirror inversion symmetries of the unit cell and couple brig…
Who is the assignee on this patent?
Univ Texas
What technology area does this patent fall under?
Primary CPC classification G02B5/3025. Mapped technology areas include Physics.
When was this patent published?
Publication date Thu Nov 24 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).