Ink property sensing on a printhead

US2016339696A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2016339696-A1
Application numberUS-201415114967-A
CountryUS
Kind codeA1
Filing dateJan 31, 2014
Priority dateJan 31, 2014
Publication dateNov 24, 2016
Grant date

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

Ink property sensing on a printhead is described. In an example, a substrate for a printhead includes a cap layer having bores. Chambers are formed beneath the cap layer in fluidic communication with the bores. Fluid ejectors are disposed in at least a portion of the chambers. At least one ion-sensitive field effect transistor (ISFET) is disposed in a respective at least one of the chambers. An electrode is disposed in each of the chambers having an ISFET and capacitively coupled to said ISFET through a dielectric.

First claim

Opening claim text (preview).

What is claimed is: 1 . A substrate for a printhead, comprising: a cap layer having bores: chambers formed beneath the cap layer in fluidic communication with the bores; fluid ejectors disposed in at least a portion of the chambers; at least one ion-sensitive field effect transistor (ISFET) disposed in a respective at least one of the chambers; and an electrode disposed in each of the chambers having an ISFET and capacitively coupled to said ISFET through a dielectric. 2 . The substrate of claim 1 , wherein each ISFET comprises: source and drain diffusion regions in the substrate; a gate region patterned using at least one conductive layer formed on the substrate; and wherein the dielectric includes at least one dielectric layer electrically isolating the gate region from the respective chamber. 3 . The substrate of claim 2 , wherein the at least one conductive layer includes a polysilicon layer and at least one metal layer. 4 . The substrate of claim 2 , wherein the gate region includes a metal region formed in a top-most conductive layer of the at least one conductive layer, the metal region being capacitively coupled with the respective electrode. 5 . The substrate of claim 1 , wherein each electrode is formed on the cap layer above the respective ISFET. 6 . The substrate of claim 2 , wherein each electrode is formed on the dielectric surrounding the ISFET. 7 . A printhead, comprising: a plurality of nozzles formed in an orifice plate; a plurality of chambers formed in a barrier layer beneath the orifice plate, the plurality of chambers being in fluidic communication with the plurality of nozzles; ink ejectors disposed in at least a portion of the plurality of chambers; and at least one ink property sensor disposed in a respective at least one of the plurality of chambers, each ink property sensor comprising an ion-sensitive field effect transistor (ISFET) capacitively coupled to an electrode through a dielectric. 8 . The printhead of claim 7 , wherein the ISFET of each ink property sensor comprises a floating-gate capactively coupled to the respective electrode through at least one layer of the respective dielectric. 9 . The printhead of claim 7 , wherein the electrode of each ink property sensor is formed on the orifice plate above the respective ISFET. 10 . The printhead of claim 7 , wherein the electrode of each ink property sensor is formed on the respective dielectric surrounding the respective ISFET. 11 . A method of sensing ink properties on a printhead, comprising: coupling a source of an ion-sensitive field effect transistor (ISFET) formed in a chamber of the printhead containing ink to a reference voltage; coupling a voltage to an electrode in contact with the ink in the chamber, where the electrode is capactively coupled to a gate of the ISFET and the voltage is selected to establish a selected voltage between a drain and the source of the ISFET; and measuring drain-to-source current of the ISFET. 12 . The method of claim 11 , further comprising: obtaining measurements of the drain-to-source current over a plurality of iterations; and measuring changes in the drain-to-source current over the plurality of iterations. 13 . The method of claim 12 , further comprising: deriving on concentration measurements from the changes in the drain-to-source current over the plurality of iterations.

Assignees

Inventors

Classifications

  • Ink level or ink residue control · CPC title

  • B41J2/1433Primary

    Structure of nozzle plates · CPC title

  • B41J2/195Primary

    for monitoring ink quality · CPC title

  • Structures including a sensor · CPC title

  • Drives, motors, controls or automatic cut-off devices for the entire printing mechanism · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US2016339696A1 cover?
Ink property sensing on a printhead is described. In an example, a substrate for a printhead includes a cap layer having bores. Chambers are formed beneath the cap layer in fluidic communication with the bores. Fluid ejectors are disposed in at least a portion of the chambers. At least one ion-sensitive field effect transistor (ISFET) is disposed in a respective at least one of the chambers. An…
Who is the assignee on this patent?
Hewlett Packard Development Co Lp
What technology area does this patent fall under?
Primary CPC classification B41J2/1433. Mapped technology areas include Operations & Transport.
When was this patent published?
Publication date Thu Nov 24 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).