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Eliminating emissive sub-bandgap states in nanocrystals
US2016336477A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016336477-A1 |
| Application number | US-201615095001-A |
| Country | US |
| Kind code | A1 |
| Filing date | Apr 8, 2016 |
| Priority date | Apr 9, 2015 |
| Publication date | Nov 17, 2016 |
| Grant date | — |
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Abstract
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The size-dependent band-gap tunability and solution processability of nanocrystals (NCs) make them attractive candidates for optoelectronic applications. One factor that presently limits the device performance of NC thin films is sub-bandgap states, also referred to as trap states. Trap states can be controlled by surface treatment of the nanocrystals.
First claim
Opening claim text (preview).
What is claimed is: 1 . A method of modifying a surface of an MX nanocrystal comprising contacting a surface of the nanocrystal with an oxidizing agent. 2 . The method of claim 1 , wherein the M includes Pb. 3 . The method of claim 1 , wherein the X includes S. 4 . The method of claim 1 , wherein the X includes Se. 5 . The method of claim 1 , wherein the oxidizing agent includes 1,4-benzoquinone, dithiothreitol, 2,3-dichloro-5,6-dicyanobenzoquinone, 3,3′,5,5′-tetra-tert-butyldiphenoquinone, di-tert-butyl peroxide, I 2 , I 2 , I − (I 3 − ), chlorine gas, bromine, ozone, O 2 plasma treatment, or an acid. 6 . The method of claim 1 , wherein the oxidizing agent includes pyruvic acid and the method includes annealing. 7 . The method of claim 1 , wherein contacting a surface of the nanocrystal with the oxidizing agent increases the charge of M. 8 . A method of treating a film that includes an MX nanocrystal comprising contacting a surface of the nanocrystal with an oxidizing agent. 9 . The method of claim 8 , wherein the M includes Pb. 10 . The method of claim 8 , wherein the X includes S. 11 . The method of claim 8 , wherein the X includes Se. 12 . The method of claim 8 , wherein the oxidizing agent includes 1,4-benzoquinone, dithiothreitol, 2,3-dichloro-5,6-dicyanobenzoquinone, 3,3′,5,5′-tetra-tert-butyldiphenoquinone, di-tert-butyl peroxide, I 2 , I 2 /I − (I 3 − ), chlorine gas, bromine, ozone, O 2 plasma treatment, or an acid, for example, H 2 SO 4 or HNO 3 . 13 . The method of claim 8 , wherein the oxidizing agent includes pyruvic acid treatment and annealing. 14 . The method of claim 8 , wherein contacting a surface of the nanocrystal with the oxidizing agent increases the charge of M. 15 . The method of claim 8 , wherein contacting the surface of the nanocrystal with the oxidizing agent includes dispensing the oxidizing agent onto the film. 16 . A lead sulfide nanocrystal comprising a nanocrystal having an oxidized surface such that the density of trap states for the nanocrystal having the oxidized surface to the nanocrystal having an untreated surface is reduced by at least 20-fold.
Assignees
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Classifications
- C09K11/668Primary
Sulfates · CPC title
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US2016336477A1 cover?
- The size-dependent band-gap tunability and solution processability of nanocrystals (NCs) make them attractive candidates for optoelectronic applications. One factor that presently limits the device performance of NC thin films is sub-bandgap states, also referred to as trap states. Trap states can be controlled by surface treatment of the nanocrystals.
- Who is the assignee on this patent?
- Massachusetts Inst Technology
- What technology area does this patent fall under?
- Primary CPC classification C09K11/668. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Thu Nov 17 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).