Multiple Directed Self-Assembly Patterning Process

Patent metadata

Field	Value
Publication number	US-2016336186-A1
Application number	US-201514713207-A
Country	US
Kind code	A1
Filing date	May 15, 2015
Priority date	May 15, 2015
Publication date	Nov 17, 2016
Grant date	—

Abstract

Disclosed is a method of forming a target pattern for a semiconductor device using multiple directed self-assembly (DSA) patterning processes. The method includes receiving a substrate and forming a guide pattern over the substrate by performing a process that includes a first DSA process. The method further includes performing a second DSA process over the substrate using the guide pattern. In an embodiment, the first DSA process controls the first pitch of a dense pattern in a first direction and the second DSA process controls the second pitch of the dense pattern in a second direction.

First claim

1 . A method of forming a target pattern for a semiconductor device, comprising:
receiving a substrate; forming a guide pattern over the substrate by performing a process that includes a first directed self-assembly (DSA) process, wherein the first DSA process results in a first copolymer layer over the substrate, the first copolymer layer includes a first constituent polymer and a second constituent polymer, and the guide pattern corresponds to the first constituent polymer; and performing a second DSA process over the substrate using the guide pattern.

2 . The method of claim 1 , wherein the forming of the guide pattern includes:
forming a first layer over the substrate; forming a second layer over the first layer; patterning the second layer thereby forming first trenches in the second layer; and forming the first copolymer layer in the first trenches by the first DSA process.

3 . The method of claim 2 , wherein the first DSA process includes:
depositing a first copolymer material in the first trenches, wherein the first copolymer material is directed self-assembling; and inducing microphase separation within the first copolymer material thereby defining the first constituent polymer and the second constituent polymer.

4 . The method of claim 2 , wherein the forming of the guide pattern further includes:
selectively removing the first constituent polymer from the first copolymer layer, resulting in second trenches in the first copolymer layer; etching the first layer through the second trenches thereby forming third trenches in the first layer as the guide pattern; and thereafter removing the second layer and the first copolymer layer.

5 . The method of claim 4 , wherein the performing of the second DSA process includes:
forming a second copolymer layer over the first layer and in the third trenches, wherein the second copolymer layer includes a third constituent polymer and a fourth constituent polymer.

6 . The method of claim 5 , further comprising:
transferring to the substrate a pattern corresponding to the third constituent polymer.

7 . The method of claim 2 , wherein the forming of the guide pattern further includes:
selectively removing the second constituent polymer from the first copolymer layer; selectively removing the second layer while leaving the first constituent polymer over the first layer as the guide pattern; depositing a third layer over the first layer; and planarizing a top surface of the third layer and the guide pattern.

8 . The method of claim 7 , wherein the performing of the second DSA process includes:
depositing a second copolymer material over the third layer and the guide pattern, wherein the second copolymer material is directed self-assembling; and inducing microphase separation within the second copolymer material thereby defining a third constituent polymer and a fourth constituent polymer.

9 . The method of claim 8 , wherein the guide pattern is substantially aligned with one of: the third constituent polymer and the fourth constituent polymer.

10 . The method of claim 1 , wherein the forming of the guide pattern includes:
forming a first layer over the substrate; forming the first copolymer layer over the first layer by the first DSA process; selectively removing the first constituent polymer from the first copolymer layer, resulting in first trenches in the first copolymer layer; etching the first layer through the first trenches thereby forming second trenches in the first layer as the guide pattern; and thereafter removing the first copolymer layer.

11 . The method of claim 10 , wherein the performing of the second DSA process includes:
depositing a second copolymer material in the second trenches, wherein the second copolymer material is directed self-assembling; and inducing microphase separation within the second copolymer material thereby defining a third constituent polymer and a fourth constituent polymer.

12 . A method of patterning a substrate, comprising:
forming a first layer over the substrate; forming a second layer over the first layer; patterning the second layer thereby forming first trenches in the second layer; forming a first copolymer layer in the first trenches by a first DSA process, wherein the first copolymer layer includes a first constituent polymer and a second constituent polymer; selectively removing the second constituent polymer from the first copolymer layer; selectively removing the second layer thereby leaving the first constituent polymer over the first layer; depositing a third layer over the first layer and the first constituent polymer; planarizing the third layer to expose the first constituent polymer; and performing a second DSA process over the third layer and the first constituent polymer using the first constituent polymer as a guide pattern for the second DSA process.

13 - 16 . (canceled)

17 . A method of patterning a substrate, comprising:
forming a first layer over the substrate; forming a first copolymer layer over the first layer by a first DSA process, wherein the first copolymer layer includes a first constituent polymer and a second constituent polymer; selectively removing the first constituent polymer from the first copolymer layer, resulting in first trenches in the first copolymer layer; etching the first layer through the first trenches thereby forming second trenches in the first layer; and forming a second copolymer layer in the second trenches by a second DSA process, wherein the second copolymer layer includes a third constituent polymer and a fourth constituent polymer.

18 . The method of claim 17 , further comprising, before the forming of the second copolymer layer:
removing the first copolymer layer.

19 . The method of claim 17 , wherein:
the first constituent polymer corresponds to a line pattern; and the third constituent polymer corresponds to a hole pattern.

20 . The method of claim 17 , further comprising:
forming a pattern in the substrate corresponding to the third constituent polymer.

21 . The method of claim 12 , wherein the planarizing the third layer to expose the first constituent polymer includes planarizing the third layer by a chemical mechanical planarization (CMP) process.

22 . The method of claim 12 , wherein the performing of the second DSA process includes:
forming a second copolymer layer over the third layer and the first constituent polymer, wherein the second copolymer layer includes a third constituent polymer and a fourth constituent polymer, and wherein the first constituent polymer is aligned with the third constituent polymer.

23 . The method of claim 12 , wherein the performing of the second DSA process includes:
forming a second copolymer layer over the third layer and the first constituent polymer; and inducing microphase separation within the second copolymer layer thereby defining a third constituent polymer and a fourth constituent polymer, wherein the third constituent polymer corresponds to the first constituent polymer.

24 . The method of claim 23 , wherein the performing of the second DSA process includes:
selectively removing the fourth constituent polymer, leaving the third constituent polymer over the third layer; and transferring to the substrate a pattern using the third constituent polymer as a mask.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Tseng Chin-Yuan
• Hung Chi-Cheng
• Chen Chun-Kuang
• Lo Kuan-Hsin
• Liu Ru-Gun
• Gau Tsai-Sheng
• Lin Wei-Liang

Classifications

• H10P76/4085

  characterised by the processes involved to create the masks · CPC title

• H10P76/20 Primary

  of masks comprising organic materials · CPC title

• H10P50/695

  characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask · CPC title

• H10P50/694

  characterised by their behaviour during the process, e.g. soluble masks or redeposited masks · CPC title

• H10P50/73

  using masks for insulating materials · CPC title