Film forming material for lithography, composition, underlayer film for lithography, and method for forming pattern
US-2024319600-A1 · Sep 26, 2024 · US
US2016334707A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016334707-A1 |
| Application number | US-201615222031-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jul 28, 2016 |
| Priority date | Feb 18, 2014 |
| Publication date | Nov 17, 2016 |
| Grant date | — |
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To provide a negative photosensitive resin composition for an optical element having good ink repellency and capable of reducing a residue at opening sections, a cured resin film for an optical element having good ink repellency, partition walls for an optical element capable of forming a high-precision pattern, and an optical element having such partition walls. A negative photosensitive resin composition comprising a photocurable alkali-soluble resin or alkali-soluble monomer (A), a photopolymerization initiator (B), a reactive ultraviolet absorber (C), a polymerization inhibitor (D), and an ink repellent (E); a cured film and partition walls formed by using the negative photosensitive resin composition; or an organic EL element, a quantum dot display, a TFT array, or a thin-film solar cell, having such partition walls positioned between a plurality of dots and their adjacent dots on a substrate surface.
Opening claim text (preview).
What is claimed is: 1 . A negative photosensitive resin composition for an organic EL element, a quantum dot display, a TFT array or a thin film solar cell, characterized by comprising an alkali-soluble resin or alkali-soluble monomer (A) having a photo-curable property, a photopolymerization initiator (B), a reactive ultraviolet absorber (C), a polymerization inhibitor (D) and an ink repellent (E). 2 . The negative photosensitive resin composition according to claim 1 , wherein in the total solid content in the negative photosensitive resin composition, the content of the reactive ultraviolet absorber (C) is from 0.01 to 20 mass %, and the content of the polymerization inhibitor (D) is from 0.001 to 1 mass %. 3 . The negative photosensitive resin composition according to claim 1 , wherein the reactive ultraviolet absorber (C) is a reactive ultraviolet absorber (C1) having a benzophenone skeleton, a benzotriazole skeleton, a cyano acrylate skeleton or a triazine skeleton, and having an ethylenic double bond. 4 . The negative photosensitive resin composition according to claim 3 , wherein the reactive ultraviolet absorber (C1) is a compound represented by the following formula (C11): in the formula (C11), R 11 to R 19 are each independently a hydrogen atom, a hydroxy group, a halogen atom or a monovalent substituted or unsubstituted hydrocarbon group which is bonded to the benzene ring directly or via an oxygen atom and which may have at least one member selected from an ethylenic double bond, an etheric oxygen atom and an ester bond, between carbon atoms, provided that at least one of R 11 to R 19 has an ethylenic double bond. 5 . The negative photosensitive resin composition according to claim 1 , wherein the ink repellent (E) has fluorine atoms, and the content of fluorine atoms in the ink repellent (E) is from 1 to 40 mass %. 6 . The negative photosensitive resin composition according to claim 1 , wherein the ink repellent (E) is a compound having an ethylenic double bond. 7 . The negative photosensitive resin composition according to claim 1 , wherein the ink repellent (E) is a partially hydrolyzed condensate of a hydrolyzable silane compound. 8 . A cured resin film for an organic EL element, a quantum dot display, a TFT array or a thin film solar cell, characterized by being formed by using the negative photosensitive resin composition as defined in claim 1 . 9 . Partition walls for an organic EL element, a quantum dot display, a TFT array or a thin film solar cell, which are formed to partition a substrate surface into a plurality of compartments for forming dots, and which are characterized by being made of the cured resin file as defined in claim 8 . 10 . An optical element having partition walls located between a plurality of dots and their adjacent dots on a substrate surface, the optical element being an organic EL element, a quantum dot display, a TFT array or a thin film solar cell, and characterized in that said partition walls are formed of the partition walls as defined in claim 9 . 11 . The optical element according to claim 10 , wherein the dots are formed by an inkjet method.
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