Methods of generation of pores in sheets of hexagonal boron nitride and applications thereof

US2016334366A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2016334366-A1
Application numberUS-201615088549-A
CountryUS
Kind codeA1
Filing dateApr 1, 2016
Priority dateApr 1, 2015
Publication dateNov 17, 2016
Grant date

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

This disclosure provides systems, methods, and apparatus related to few-layer and monolayer hexagonal boron nitride having a pore therein. In one aspect, a method comprises providing a sheet of hexagonal boron nitride (h-BN). A defect is created in the sheet of h-BN. The sheet of h-BN is heated to a temperature above about 500° C. The defect in the sheet of h-BN is irradiated with charged particles to enlarge the defect to a hexagonal-shaped pore or a parallelogram-shaped pore in the sheet of h-BN.

First claim

Opening claim text (preview).

What is claimed is: 1 . A method comprising: (a) providing a sheet of hexagonal boron nitride (h-BN); (b) creating a defect in the sheet of h-BN; (c) heating the sheet of h-BN to a temperature above about 500° C.; and (d) irradiating the defect in the sheet of h-BN with charged particles to enlarge the defect to a hexagonal-shaped pore or a parallelogram-shaped pore in the sheet of h-BN. 2 . The method of claim 1 , further comprising: fabricating the sheet of h-BN. 3 . The method of claim 1 , wherein the charged particles comprise particles selected from a group comprising electrons, protons, and alpha particles. 4 . The method of claim 1 , wherein the charged particles comprise electrons, and wherein the electrons have energies of about 40 kV to 120 kV. 5 . The method of claim 1 , wherein the hexagonal-shaped pore or the parallelogram-shaped pore in the sheet h-BN has a dimension of about 1 nanometer to 3 nanometers across the hexagonal-shaped pore or the parallelogram-shaped pore. 6 . The method of claim 1 , wherein creating the defect comprises irradiating the sheet of h-BN with the charged particles. 7 . The method of claim 1 , wherein creating the defect comprises depositing a catalyst on the h-BN and heating the catalyst. 8 . The method of claim 7 , wherein the catalyst comprises a transition metal. 9 . The method of claim 7 , wherein the catalyst comprises a metal selected from a group consisting of iron, cobalt, and nickel. 10 . The method of claim 1 , wherein the sheet of h-BN is heated to a temperature of about 700° C. in operation (c). 11 . The material of claim 1 , wherein the sheet of h-BN comprises a monolayer of h-BN or multiple layers of h-BN. 12 . A material comprising: a sheet of hexagonal boron nitride (h-BN), a pore being defined in the sheet of h-BN, the pore being a hexagonal-shaped pore or a parallelogram-shaped pore. 13 . The material of claim 12 , wherein the sheet of h-BN comprises a monolayer of h-BN or multiple layers of h-BN. 14 . The material of claim 12 , wherein pore has a dimension of about 1 nanometer to 3 nanometers across the pore. 15 . The material of claim 12 , wherein the pore is defined by atoms selected from a group consisting of nitrogen atoms, boron atoms, and combinations thereof. 16 . The material of claim 12 , further comprising: functional groups attached to atoms defining the pore. 17 . A method comprising: providing an apparatus, the apparatus comprising: a first chamber and a second chamber, the first chamber and the second chamber being separated from each other by a sheet of hexagonal boron nitride (h-BN), the first chamber and the second chamber in fluid communication with each other by a pore of dimensions of about 0.5 nanometers to 3 nanometers in the sheet of h-BN; a liquid disposed in the first chamber and the second chamber, a salt being dissolved in the liquid; a first electrode in contact with the liquid disposed in the first chamber and a second electrode in contact with the liquid disposed in the second chamber; and a power source electrically connected to the first electrode and the second electrode; applying a voltage between the first electrode and the second electrode; and measuring the current between the first electrode and the second electrode when a molecule in the first chamber travels to the second chamber through the pore in the sheet of h-BN. 18 . The method of claim 17 , wherein the voltage is about 1 mV to 2 V. 19 . The method of claim 17 , wherein the pore in the h-BN has shape selected from a group consisting of a triangular shape, a hexagonal shape, and a parallelogram shape. 20 . The method of claim 17 , wherein the molecule comprises a stand of DNA.

Assignees

Inventors

Classifications

  • C12Q1/6869Primary

    Methods for sequencing · CPC title

  • Investigating individual macromolecules, e.g. by translocation through nanopores (Coulter counters in general G01N15/12; fabrication methods for nanoscale apertures B81B1/00; sequencing of nucleic acids C12Q1/68) · CPC title

  • Microapparatus (sample containers with integrated microfluidic structures B01L3/5027) · CPC title

  • for microworking, e. g. etching of gratings or trimming of electrical components · CPC title

  • Reactive etching · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US2016334366A1 cover?
This disclosure provides systems, methods, and apparatus related to few-layer and monolayer hexagonal boron nitride having a pore therein. In one aspect, a method comprises providing a sheet of hexagonal boron nitride (h-BN). A defect is created in the sheet of h-BN. The sheet of h-BN is heated to a temperature above about 500° C. The defect in the sheet of h-BN is irradiated with charged parti…
Who is the assignee on this patent?
Zettl Alexander K, Dunn Gabriel P, Gilbert Stephen M, and 1 more
What technology area does this patent fall under?
Primary CPC classification C12Q1/6869. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Thu Nov 17 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).