Sputtering target comprising tungsten carbide or titanium carbide

Patent metadata

Field	Value
Publication number	US-2016333460-A1
Application number	US-201515110974-A
Country	US
Kind code	A1
Filing date	Mar 13, 2015
Priority date	Mar 26, 2014
Publication date	Nov 17, 2016
Grant date	—

Abstract

The present invention provides a sputtering target configured from tungsten carbide or titanium carbide, characterized in having a purity of 4N or higher and a density of 98% or higher. Specifically, an object of the present invention is to provide a sputtering target configured from tungsten carbide or titanium carbide, wherein the purity is maintained high, and the target has a high density and a uniform and high hardness and is capable of stable high speed deposition and less generation of particles.

First claim

1 . A tungsten carbide sputtering target, having a purity of 4N or higher and a relative density of 98% or higher.

2 . The tungsten carbide sputtering target according to claim 1 , having a hardness of HRA 90 or higher, and a variation in hardness within ±5%.

3 . The tungsten carbide sputtering target according to claim 2 , wherein machined finish surface roughness Ra is 1.0 μm or less.

4 . The tungsten carbide sputtering target according to claim 3 , wherein surface roughness Ra after polishing processing is 0.2 μm or less.

5 . A method of producing the tungsten carbide sputtering target of claim 1 , wherein two or more types of tungsten carbide raw material powders having a different average grain size are mixed to prepare a mixed powder of which the grain size distribution has as many apexes as a number of types of raw material powders in the mixed powder, and the prepared mixed powder is sintered.

6 . A titanium carbide sputtering target, having a purity of 4N or higher and a relative density of 98% or higher.

7 . The titanium carbide sputtering target according to claim 6 , having a hardness of HV 2500 or higher, and a variation in hardness within ±5%.

8 . The titanium carbide sputtering target according to claim 7 , wherein machined finish surface roughness Ra is 1.0 μm or less.

9 . The titanium carbide sputtering target according to claim 8 , wherein surface roughness Ra after polishing processing is 0.2 μm or less.

10 . A method of producing the titanium carbide sputtering target of claim 6 , wherein two or more types of titanium carbide raw material powders having a different average grain size are mixed to prepare a mixed powder of which the grain size distribution has as many apexes as a number of types of raw material powders in the mixed powder, and the prepared mixed powder is sintered.

11 . The titanium carbide sputtering target according to claim 6 , wherein machined finish surface roughness Ra is 1.0 μm or less.

12 . The titanium carbide sputtering target according to claim 6 , wherein surface roughness Ra after polishing processing is 0.2 μm or less.

13 . The tungsten carbide sputtering target according to claim 1 , wherein machined finish surface roughness Ra is 1.0 μm or less.

14 . The tungsten carbide sputtering target according to claim 1 , wherein surface roughness Ra after polishing processing is 0.2 μm or less.

Assignees

• Jx Nippon Mining & Metals Corp

Inventors

• Ohashi Kazumasa
• Oda Kunihiro

Classifications

• C04B2235/72

  Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics · CPC title

• C23C14/0635

  Carbides · CPC title

• C04B2235/6567

  Treatment time · CPC title

• C04B35/5611

  based on titanium carbides · CPC title

• C04B35/64

  Burning or sintering processes (C04B33/32 takes precedence {; powder metallurgy B22F}) · CPC title