Fluorine-based surface treating agent for vapor deposition and article finished with the surface treating agent by vapor deposition
US-9340705-B2 · May 17, 2016 · US
Process that enables the creation of nanometric structures by self-assembly of block copolymers
US2016333221A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016333221-A1 |
| Application number | US-201415103740-A |
| Country | US |
| Kind code | A1 |
| Filing date | Dec 11, 2014 |
| Priority date | Dec 13, 2013 |
| Publication date | Nov 17, 2016 |
| Grant date | — |
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- Title
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- Abstract
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Abstract
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The invention relates to a process that enables the creation of nanometric structures by self-assembly of block copolymers, at least one of the blocks of which is crystallizable or has at least one liquid crystal phase.
First claim
Opening claim text (preview).
1 . A nanostructured assembly process using a composition comprising a block copolymer, at least one of the blocks of which is crystallizable or has at least one liquid crystal phase, wherein the process comprises the following steps: dissolving the block copolymer in a solvent to form a solution, depositing the solution on a surface, annealing. 2 . The process as claimed in claim 1 , wherein the block copolymer is a diblock copolymer. 3 . The process as claimed in claim 1 , wherein the block copolymer has a crystallizable block. 4 . The process as claimed in claim 1 , wherein at least one of the blocks has a liquid crystal phase and the block which has a liquid crystal phase is lyotropic. 5 . The process as claimed in claim 1 , wherein at least one of the blocks has a liquid crystal phase and the block which has a liquid crystal phase is thermotropic. 6 . The process as claimed in claim 1 , wherein orientation of the block copolymer is carried out during a time of between 1 and 20 minutes, limits included. 7 . The process as claimed in claim 1 , wherein orientation of the block copolymer is carried out at a temperature of between 333 K and 603 K. 8 . The process as claimed in claim 1 , wherein orientation of the block copolymer is carried out under a controlled atmosphere comprising solvent vapors, or a solvent atmosphere/temperature combination. 9 . The use of the process as claimed in claim 1 in the field of surface nanostructuring for electronics. 10 . A mask of block copolymers obtained using the process as claimed in claim 1 .
Assignees
Inventors
Classifications
- C09D183/00Primary
Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers · CPC title
- B81C1/00428Primary
Etch mask forming processes not provided for in groups B81C1/00396 - B81C1/0042 · CPC title
Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule · CPC title
Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping · CPC title
Forming nanoscale microstructures using auto-arranging or self-assembling material · CPC title
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- What does patent US2016333221A1 cover?
- The invention relates to a process that enables the creation of nanometric structures by self-assembly of block copolymers, at least one of the blocks of which is crystallizable or has at least one liquid crystal phase.
- Who is the assignee on this patent?
- Centre Nat De La Rech Scient (Cnrs), Univ Bordeaux, Inst Polytechnique Bordeaux, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification C09D183/00. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Thu Nov 17 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).