Oxide material and semiconductor device
US-2024395942-A1 · Nov 28, 2024 · US
US2016322448A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016322448-A1 |
| Application number | US-201615044675-A |
| Country | US |
| Kind code | A1 |
| Filing date | Feb 16, 2016 |
| Priority date | Apr 29, 2015 |
| Publication date | Nov 3, 2016 |
| Grant date | — |
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An organic light emitting diode display includes: a substrate; a scan line formed over the substrate and transmitting a scan signal; a data line crossing the scan line and transmitting a data voltage; a driving voltage line crossing the scan line and transmitting a driving voltage; a switching transistor connected to the scan line and the data line; a driving transistor connected to the switching transistor; a driving connection member connected to a driving gate electrode of the driving transistor; a storage capacitor including a first storage electrode and a second storage electrode; a pixel electrode electrically connected to the driving transistor; and a contact hole connecting the first storage electrode and the driving connection member. the second storage electrode may include a cut-out by a curved edge at least partially surrounding the contact hole, and the pixel electrode may be formed not to overlap the cut-out.
Opening claim text (preview).
What is claimed is: 1 . An organic light emitting diode display device comprising: a substrate; a scan line formed over the substrate and configured to transmit a scan signal; a data line crossing the scan line and configured to transmit a data voltage; a driving voltage line crossing the scan line when viewed in a viewing direction and configured to transmit a driving voltage; a switching transistor connected to the scan line and the data line; a driving transistor connected to the switching transistor; a driving connector member connected to a driving gate electrode of the driving transistor; a storage capacitor comprising a first storage electrode and a second storage electrode; a pixel electrode electrically connected to the driving transistor; and a contact hole connecting the first storage electrode and the driving connector member, wherein, when viewed in the viewing direction, the second storage electrode comprises a curved edge at least partly surrounding the contact hole, and wherein the pixel electrode is formed not to overlap the curved edge when viewed in the viewing direction. 2 . The device of claim 1 , wherein the first storage electrode corresponds to the driving gate electrode, and wherein the second storage electrode is formed by expanding from the driving voltage line. 3 . The device of claim 1 , wherein the curved edge comprises a first portion that is parallel to the data line and a second portion that is parallel to the scan line. 4 . The device of claim 1 , further comprising: a light emission control line formed over the substrate and configured to transmit a light emission control signal; and a light emission control transistor connected to the driving transistor. 5 . The device of claim 4 , wherein the light emission control transistor comprises a light emission channel, a light emission gate electrode, a light emission source electrode, and a light emission drain electrode. 6 . The device of claim 5 , further comprising a light emission connector member electrically connected to the light emission drain electrode, wherein the pixel electrode is electrically connected to the light emission connector member. 7 . The device of claim 6 , wherein the pixel electrode overlaps another contact hole electrically connected to the light emission connecting member, and has a generally polygonal shape. 8 . The device of claim 1 , further comprising: an organic light emission layer formed over the pixel electrode, and a common electrode formed over the organic light emission layer. 9 . The device of claim 8 , further comprising an initialization voltage line formed in the same layer as the pixel electrode and configured to transmit an initialization voltage initializing the driving transistor. 10 . The device of claim 1 , wherein the first storage electrode and the driving gate electrode are integrated in a single piece which overlaps the second storage electrode. 11 . The device of claim 1 , wherein the second storage electrode extends from the driving voltage line and is formed of a material the same as that of the driving voltage line. 12 . The device of claim 11 , wherein an edge of the driving voltage line and the curved edge of the second storage electrode collectively define an indent. 13 . The device of claim 12 , wherein the pixel electrode overlaps the second storage electrode, but does not overlap the indent when viewed in the viewing direction. 14 . The device of claim 13 , further comprising a light emission layer, wherein the light emission layer overlaps the second storage electrode, but does not overlap the indent when viewed in the viewing direction. 15 . The device of claim 1 , wherein the device comprises a plurality of pixels and a plurality of pixel driving circuits, each of which is connected to one of the plurality of pixels, wherein each pixel driving circuit comprises the switching transistor, the driving transistor, the driving connector member and the storage capacitor. 16 . A method of making an organic light emitting diode display, the method comprising: forming a semiconductor layer over a substrate; forming a first insulation layer over the semiconductor layer; forming a first electrically conductive layer portion over the first insulation layer, thereby forming a first thin film transistor comprising the semiconductor layer and the electrically conductive layer portion which is configured to function as a gate electrode; forming a second insulation layer over the first electrically conductive layer portion; forming a second electrically conductive layer portion over the second insulation layer, wherein the first and second electrically conductive layer portions overlap each other, thereby forming a capacitor, wherein the first electrically conductive layer portion comprises a first capacitor electrode of the capacitor, wherein the second electrically conductive layer portion comprises a second capacitor electrode of the capacitor; forming a third electrically conductive layer portion over the second insulation layer; forming a via connecting the third electrically conductive layer portion and the first electrically conductive layer portion; forming a third insulation layer over the second and third electrically conductive layer portions; and forming a pixel electrode over the third insulation layer, wherein the second electrically conductive layer portion comprises a cut-out defined by a curved edge thereof which at least partly surrounds the via when viewed in a viewing direction perpendicular to a major surface of the substrate, wherein the pixel electrode does not overlap the cut-out when viewed in the viewing direction. 17 . The method of claim 16 , wherein the cut-out is an indent or a hole when viewed in the viewing direction. 18 . The method of claim 16 , wherein the pixel electrode overlaps the second electrically conductive layer portion, but does not overlap the cut-out when viewed in the viewing direction. 19 . The method of claim 18 , further comprising forming a light emission layer over the pixel electrode, wherein the light emission layer overlaps the second electrically conductive layer portion, but does not overlap the cut-out when viewed in the viewing direction. 20 . The method of claim 16 , wherein forming the second electrically conductive layer comprises patterning an electrically conductive material layer formed over the second insulation layer to form the indent to form the cut-out.
integrated with passive devices, e.g. auxiliary capacitors · CPC title
adapted for preventing breakage, peeling or short circuiting · CPC title
comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO · CPC title
wherein the TFTs are in active matrices · CPC title
characterised by the materials · CPC title
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