Method for the fabrication and transfer of graphene

Patent metadata

Field	Value
Publication number	US-2016318207-A1
Application number	US-201615211978-A
Country	US
Kind code	A1
Filing date	Jul 15, 2016
Priority date	Jun 20, 2014
Publication date	Nov 3, 2016
Grant date	—

Abstract

Provided herein are processes for transferring high quality large-area graphene layers (e.g., single-layer graphene) to a flexible substrate based on preferential adhesion of certain thin metallic films to graphene followed by lamination of the metallized graphene layers to a flexible target substrate in a process that is compatible with roll-to-roll manufacturing, providing an environmentally benign and scalable process of transferring graphene to flexible substrates.

First claim

1 .- 29 . (canceled)

30 . A method of manufacturing a graphene layer on a substrate, comprising;
providing a graphene layer disposed on a first substrate; applying a metal layer to the graphene layer to form a metalized graphene layer; exfoliating the metalized graphene layer from the first substrate; and laminating the metalized graphene layer to a second substrate, wherein the first substrate comprises a metal or alloy selected from the group consisting of nickel, cobalt, iron, platinum, gold, ruthenium, iridium, and aluminum.

31 . The method of claim 30 , wherein the graphene layer is a graphene monolayer.

32 . The method of claim 30 , wherein the first substrate is reusable after exfoliating the metalized graphene layer from the first substrate.

33 . The method of claim 30 , wherein the method is used in roll-to-roll manufacturing.

34 . The method of claim 30 , wherein the first substrate comprises thin metal films on top of silicon substrates or thicker metals films in a form of foils or plates.

35 . The method of claim 30 , wherein the metal layer comprises aluminum, gold, nickel, cobalt, iron, silver, copper, tin, palladium, platinum, or alloy thereof.

36 . The method of claim 35 , wherein the metal layer comprises two or more sequentially deposited metal layers, wherein each layer comprises a transition metal, aluminum, or alloy thereof.

37 . The method of claim 36 , wherein the two or more sequentially deposited metal layers each have a thickness of about 1 to about 1000 nanometers (nm), about 20 nm to about 1000 nm, about 50 nm to about 750 nm, about 100 nm to about 500 nm, about 125 nm to about 250 nm, or about 150 nm to about 200 nm.

38 . The method of claim 30 , wherein the metal layer is applied to the graphene layer using a vacuum metallization process or an electrochemical metallization process.

39 . The method of claim 38 , wherein the vacuum metallization process is selected from the group consisting of electron beam evaporation, thermal evaporation and sputtering.

40 . The method of claim 39 , wherein the electrochemical metallization process is selected from the group consisting of an electroplating process, electroless deposition and atomic layer deposition.

41 . The method of claim 30 , further comprising patterning the metalized graphene layer.

42 . The method of claim 41 , wherein patterning the metalized graphene layer comprises metal etching in an acidic bath after the metalized graphene layer is patterned using a water-insoluble resist.

43 . The method of claim 42 , further comprising exposing the patterned metalized graphene layer to oxygen plasma to remove unpatterned graphene.

44 . The method of claim 42 , further comprising etching away metal patterns formed from patterning the metalized graphene layer so that only patterned graphene remains.

45 . A method of making solar cells or organic light emitting diodes (OLED), the method comprising using the method of claim 13 to manufacture a sheet of continuous graphene with metallic patterns wherein the graphene is a continuous planarizing electrode and the metal patterns are low-resistance electrodes.

46 . The method of claim 30 , wherein providing the graphene layer disposed on a first substrate comprises:
providing the first substrate; growing the graphene layer on the first substrate layer using a chemical vapor deposition process.

47 . The method of claim 30 , further comprising removing the metal layer from the graphene layer following lamination of the graphene layer to the second substrate.

48 . The method of claim 30 , wherein the second substrate is a flexible, solid, rigid, or fragile substrate.

49 . The method of claim 30 , wherein the second substrate is a flexible substrate selected from the group consisting of polyethylene terephthalate (PET), polyimide, polyethylene naphthalate (PEN), polycarbonate (PC), an elastomer polymer, a thermoplastic polymer, a chemical vapor deposition (CVD)-deposited polymer (ex.: Parylene-C or D or N) and combinations thereof.

50 . The method of claim 30 , wherein the second substrate is transparent.

51 . A method of transferring a graphene layer to a flexible substrate, comprising:
providing a graphene layer on a substrate, the substrate comprising a metal or alloy selected from the group consisting of nickel, cobalt, iron, platinum, gold, ruthenium, iridium, and aluminum; applying a metal layer to the graphene layer to form a metalized graphene layer; and laminating the metalized graphene layer to the flexible substrate.

52 . The method of claim 49 , further comprising removing the metal layer from the graphene layer following lamination of the metalized layer to the flexible substrate.

53 . The method of claim 30 , wherein exfoliating the metalized graphene layer from the first substrate comprises
adhering an intermediary substrate to the metal layer; applying force to the intermediary substrate sufficient to overcome the interaction between the first substrate and graphene layer to remove the metalized graphene layer from the first substrate.

54 . The method of claim 53 , wherein the intermediary substrate is thermal release adhesive tape.

55 . The method of claim 54 , further comprising removing the thermal release adhesive tape following removal of the metallized graphene from the first substrate.

56 . The method of claim 54 , wherein the thermal release adhesive tape is applied to the metal layer using a roller to apply the thermal release adhesive tape from one edge of the metal layer to an opposite edge of the metal layer.

57 . The method of claim 53 , wherein the adhering step and the removing step are performed concurrently.

58 . The method of claim 53 , wherein the intermediary substrate is adhered to the metal layer using van Der Waals forces, magnetic force, pressure differential, electrostatic force, or any combination thereof.

59 . A method of manufacturing a graphene layer on a substrate, comprising;
providing a graphene layer disposed on a first substrate; applying a first metal layer to the graphene layer before applying an aluminum layer on the first metal layer to form a metalized graphene layer; exfoliating the metalized graphene layer from the first substrate; and laminating the metalized graphene layer to a second substrate, wherein the first substrate comprises copper.

Assignees

• Univ California

Inventors

• Zaretski Aliaksandr
• Lipomi Darren J

Classifications

• H10P14/38

  characterised by treatments done after the formation of the materials · CPC title

• H10P14/3406

  Carbon, e.g. diamond-like carbon · CPC title

• H10P14/2923

  being conductive materials, e.g. metallic silicides · CPC title

• H10P14/662

  Laminate layers, e.g. stacks of alternating high-k metal oxides (adhesion layers or buffer layers H10P14/6508, H10P14/6548) · CPC title

• H10P14/40

  of conductive or resistive materials · CPC title