CIGSSe THIN FILM FOR SOLAR CELL, PREPARATION METHOD THEREOF AND ITS APPLICATION TO THIN FILM SOLAR CELL

Patent metadata

Field	Value
Publication number	US-2016315216-A1
Application number	US-201514952115-A
Country	US
Kind code	A1
Filing date	Nov 25, 2015
Priority date	Apr 22, 2015
Publication date	Oct 27, 2016
Grant date	—

Abstract

Provided is a CIGSSe thin film for a solar cell, a method for preparing the same, and a solar cell using the same. More particularly, the CIGSSe thin film for a solar cell shows a decrease in peak intensity of sulfur from the surface of the thin film to the local minimum value point of sulfur content in the depth direction, after the analysis based on the Auger electron spectroscopy, and thus controls the band-gap in the thin film. Therefore, the solar cell including the CIGSSe thin film shows an excellent effect in improving photoelectric conversion efficiency.

First claim

What is claimed is:

1 . A method for preparing a CIGSSe thin film for a solar cell, comprising the steps of:
(A) heating a substrate coated with CIG (Cu—In—Ga) oxide under the atmosphere in which a gaseous sulfur precursor and gaseous selenium precursor are present; and (B) consuming the gaseous selenium precursor completely, and then further heating the substrate under the atmosphere of the gaseous sulfur precursor.

2 . The method for preparing a CIGSSe thin film for a solar cell according to claim 5 , wherein the heating in step (B) is carried out by increasing the temperature to a temperature higher than the heating temperature in step (A).

3 . The method for preparing a CIGSSe thin film for a solar cell according to claim 1 , wherein the heating in step (B) is carried out by increasing the temperature to a temperature 10-100° C. higher than the heating temperature in step (A).

4 . The method for preparing a CIGSSe thin film for a solar cell according to claim 1 , wherein the heating in step (A) is carried out at a temperature of 400-500° C. for 1-60 minutes.

5 . The method for preparing a CIGSSe thin film for a solar cell according to claim 1 , wherein the heating in step (B) is carried out at a temperature of 510-600° C. for 1-60 minutes.

6 . The method for preparing a CIGSSe thin film for a solar cell according to claim 1 , wherein the gaseous sulfur precursor is H 2 S, and the gaseous selenium precursor is selenium vapor.

7 . The method for preparing a CIGSSe thin film for a solar cell according to claim 1 , wherein the CIG oxide is coated on the substrate by heat treating a paste including Cu, In and Ga precursors.

8 . The method for preparing a CIGSSe thin film for a solar cell according to claim 1 , wherein the CIG oxide is coated on the substrate through a spin coating or doctor blading process.

9 . The method for preparing a CIGSSe thin film for a solar cell according to claim 1 , wherein the substrate is at least one selected from molybdenum, fluorine tin oxide and indium tin oxide.

Assignees

• Korea Inst Sci & Tech

Inventors

• Min Byoung Koun
• Hwang Yun Jeong
• Park Se Jin

Classifications

• H10P14/265

  using solutions · CPC title

• H10P14/3436

  being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds · CPC title

• H10P14/2923

  being conductive materials, e.g. metallic silicides · CPC title

• H10P14/203

  using transformation of metal, e.g. oxidation or nitridation · CPC title

• H10F77/1694

  the films including Group I-III-VI materials, e.g. CIS or CIGS · CPC title