Drive control device

Patent metadata

Field	Value
Publication number	US-2016308524-A1
Application number	US-201414901767-A
Country	US
Kind code	A1
Filing date	Jul 9, 2014
Priority date	Jul 10, 2013
Publication date	Oct 20, 2016
Grant date	—

Abstract

A drive control device for two semiconductor elements having a transistor structure and a diode structure with a common energization electrode includes: a current detection device outputting a current detection signal of the semiconductor elements; and a first control device outputting a gate drive signal from when a first time period has elapsed from a starting time to when a second time period has elapsed from the starting time, at which an off-command signal is input after it is determined that a current flows through the semiconductor elements in a forward direction of the diode structure during a time period for which an on-command signal is input to the semiconductor elements. The first and the second time periods are preliminary set not to generate an arm short-circuit between two semiconductor elements.

First claim

1 . A drive control device for two semiconductor elements, each semiconductor element having an insulated gate type transistor structure, to which a gate drive voltage is applied, and a diode structure arranged on a same semiconductor substrate, the transistor structure and the diode structure having a common energization electrode, the drive control device comprising:
a current detection device that outputs a current detection signal corresponding to a current flowing through at least one of the two semiconductor elements; and a first control device that outputs a gate drive signal for instructing to apply the gate drive voltage from when a first time period has elapsed from a starting time to when a second time period has elapsed from the starting time, at which an off-command signal is input after it is determined based on the current detection signal that a current flows through the at least one of the two semiconductor elements in a forward direction of the diode structure during a time period for which an on-command signal is input to the at least one of the two semiconductor elements, wherein: the two semiconductor elements provide a half-bridge circuit; and the first time period and the second time period are preliminary set not to generate an arm short-circuit between the two semiconductor elements.

2 . The drive control device according to claim 1 , further comprising:
a second control device that outputs another gate drive signal for instructing to shut off the gate drive voltage when it is determined based on the current detection signal that the current of the at least one of the two semiconductor elements flowing in the forward direction of the diode structure is greater than or equal to a current threshold value during the time period for which the on-command signal is input to the at least one of the two semiconductor elements to be driven and controlled, wherein: when it is determined based on the current detection signal that the current of the at least one of the two semiconductor elements flowing in the forward direction of the diode structure is less than the current threshold value during the time period for which the on-command signal is input to the at least one of the two semiconductor elements to be driven and controlled, the second control device outputs the gate drive signal for instructing to apply the gate drive voltage; and when the current flows through the at least one of the two semiconductor elements in the forward direction of the diode structure, a current value, at which a conduction loss in a case where the gate drive voltage is shut off is equal to a conduction loss in a case where the gate drive voltage is applied, is preliminary measured, and a measured current value is set as the current threshold value.

3 . The drive control device according to claim 2 , wherein:
when it is determined that the current less than the current threshold value flows through the at least one of the two semiconductor elements in the forward direction of the diode structure during the time period for which the on-command signal is input to the at least one of the two semiconductor elements to be driven and controlled, the second control device extends to output the gate drive signal for instructing to apply the gate drive voltage until the second time period has elapsed after the starting time, at which the off-command signal is input to the at least one of the two semiconductor elements.

4 . The drive control device according to claim 1 , further comprising:
a second control device that outputs the gate drive signal for instructing to apply the gate drive voltage during the time period for which the on-command signal is input to the at least one of the two semiconductor elements to be driven and controlled, and extends to output the gate drive signal for instructing to apply the gate drive voltage until the second time period has elapsed after the starting time, at which the off-command signal is input to the at least one of the two semiconductor elements, when it is determined that the current flows through the at least one of the two semiconductor elements in the forward direction of the diode structure during the time period.

5 . A drive control device for a semiconductor element having an insulated gate type transistor structure, to which a gate drive voltage is applied, and a diode structure arranged on a same semiconductor substrate, the transistor structure and the diode structure having a common energization electrode, the drive control device comprising:
a current detection device that outputs a current detection signal corresponding to a current flowing through the semiconductor element; and a second control device that outputs a gate drive signal for instructing to shut off the gate drive voltage when it is determined based on the current detection signal that the current of the semiconductor element flowing in a forward direction of the diode structure is greater than or equal to a current threshold value during a time period for which an on-command signal is input to the semiconductor element, wherein: when it is determined based on the current detection signal that the current of the semiconductor element flowing in the forward direction of the diode structure is less than the current threshold value during the time period for which the on-command signal is input to the semiconductor element, the second control device outputs another gate drive signal for instructing to apply the gate drive voltage; and when the current flows through the semiconductor element in the forward direction of the diode structure, a current value, at which a conduction loss in a case where the gate drive voltage is shut off is equal to a conduction loss in a case where the gate drive voltage is applied, is preliminary measured, and a measured current value is set as the current threshold value.

6 . The drive control device according to claim 5 , wherein:
the second control device is configured to receive a threshold value specifying signal for specifying the current threshold value from an outside; and during the time period for which the on-command signal is input, the second control device uses the current threshold value corresponding to an input threshold value specifying signal to determine the current flowing through the semiconductor element.

7 . The drive control device according to claim 5 , wherein:
at least one of the first control device and the second control device performs a normal control; in the normal control, when a current flowing through a load via the at least one of the two semiconductor elements is less than a specified value, and the on-command signal is input to the semiconductor element to be driven and controlled, the at least one of the first control device and the second control device outputs the gate drive signal for instructing to apply the gate drive voltage; and in the normal control, when the current flowing through the load via the at least one of the two semiconductor elements is less than the specified value, and the off-command signal is input to the semiconductor element to be driven and controlled, the at least one of the first control device and the second control device outputs another gate drive signal for instructing to shut off the gate drive voltage.

8 . The drive control device according to claim 5 , further comprising:
a drive circuit that receives the gate drive signal, and outputs the gate drive voltage, wherein: the drive circuit is configured to include an IC having a breakdown voltage corresponding to the gate drive voltage.

9 . The drive control device according to claim 5 , wherein:
the drive control device drives and controls the two semiconductor elemen

Assignees

• Denso Corp

Inventors

• Inoue Takeshi
• Iwamura Takahiro
• Yamamoto Masahiro

Classifications

• H03K17/74

  by the use, as active elements, of diodes (by the use of more than one type of semiconductor device H03K17/567; by the use of tunnel diodes H03K17/58; by the use of negative resistance diodes H03K17/70) · CPC title

• H03K17/168 Primary

  in composite switches · CPC title

• H02M1/08 Primary

  Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters · CPC title

• H02M1/38

  Means for preventing simultaneous conduction of switches · CPC title

• H03K17/166

  Soft switching · CPC title