Power-On-Reset Detector

Patent metadata

Field	Value
Publication number	US-2016308514-A1
Application number	US-201514687526-A
Country	US
Kind code	A1
Filing date	Apr 15, 2015
Priority date	Apr 15, 2015
Publication date	Oct 20, 2016
Grant date	—

Abstract

Various implementations described herein are directed to an integrated circuit for power-on-reset detection. The integrated circuit may include a first stage configured to receive an input voltage signal and provide a triggering signal during ramp of the input voltage signal. The integrated circuit may include a second stage configured to receive the triggering signal from the first stage and provide an output voltage signal during ramp of the input voltage signal via gate leakage through at least one transistor.

First claim

1 . An integrated circuit, comprising:
a first stage having a resistor and a capacitor arranged to receive an input voltage signal and provide a triggering signal during ramp of the input voltage signal; and a second stage having at least one transistor arranged to receive the triggering signal from the first stage and provide an output voltage signal during ramp of the input voltage signal via gate leakage through the at least one transistor, wherein the at least one transistor is intercoupled to function as a capacitor having high gate input resistance.

2 . The integrated circuit of claim 1 , wherein the resistor comprises a tie-hi cell having multiple transistors, and wherein the tie-hi cell and the capacitor are arranged to filter the input voltage signal and reduce noise associated with the input voltage signal.

3 . The integrated circuit of claim 1 , wherein the at least one transistor comprises a metal-oxide-semiconductor field-effect transistor (MOSFET).

4 . An integrated circuit, comprising:
a first stage having a resistor and a capacitor arranged to receive an input voltage signal and provide a triggering signal during ramp of the input voltage signal; and a second stage having at least one transistor arranged to receive the triggering signal from the first stage and provide an output voltage signal during ramp of the input voltage signal via gate leakage through the at least one transistor, wherein the second stage is configured to provide the output voltage signal by delaying the ramp of the input voltage signal using the gate leakage through the at least one transistor.

5 . The integrated circuit of claim 1 , wherein the at least one transistor of the second stage comprises multiple transistors having a first transistor and a second transistor arranged to each receive the triggering signal from the first stage and provide the output voltage signal during ramp of the input voltage signal via gate leakage through the first transistor.

6 . The integrated circuit of claim 1 , wherein the output voltage signal corresponds to a reset timing signal, and wherein the gate leakage through the at least one transistor corresponds to a resistor-capacitor (RC) time constant configured to control the reset timing signal.

7 . An integrated circuit, comprising:
a first stage having a resistor and a capacitor arranged to receive an input voltage signal and provide a triggering signal during ramp of the input voltage signal; and a second stage having at least one transistor arranged to receive the triggering signal from the first stage and provide an output voltage signal during ramp of the input voltage signal via gate leakage through the at least one transistor, wherein the output voltage signal corresponds to a reset timing signal, and wherein the gate leakage through the at least one transistor corresponds to a temperature independent resistor-capacitor (RC) time constant that uses gate leakage to provide a predetermined time constant to control the reset timing signal.

8 . The integrated circuit of claim 1 , wherein the output voltage signal corresponds to a reset timing signal, and wherein the first and second stages are arranged to delay the reset timing signal for a period of time after the input voltage signal has reached a full source voltage.

9 . The integrated circuit of claim 1 , further comprising a third stage having a Schmitt trigger positioned in a path of the output voltage signal to provide hysteresis and reduce noise associated with the output voltage signal.

10 . The integrated circuit of claim 1 , further comprising a third stage having an inverter positioned in a path of the output voltage signal and a third transistor configured to restrain a rush-through current in the inverter.

11 . A power-on-reset detector, comprising:
a first circuit configured to receive an input voltage and provide a triggering voltage during ramp of the input voltage; and a second circuit configured to receive the triggering voltage and provide an output voltage by delaying ramp of the input voltage using gate leakage through at least one transistor.

12 . The detector of claim 11 , wherein the first circuit comprises resistor-capacitor (RC) circuit having at least one resistor and at least one capacitor arranged to filter the input voltage and reduce noise associated with the input voltage.

13 . The detector of claim 12 , wherein the at least one resistor comprises a tie-hi cell having multiple transistors arranged to provide the input voltage after ramp of the input voltage.

14 . A power-on-reset detector, comprising;
a first circuit configured to receive an input voltage and provide a triggering voltage during ramp of the input voltage; and a second circuit configured to receive the triggering voltage and provide an output voltage by delaying ramp of the input voltage using gate leakage through at least one transistor, wherein the at least one transistor comprises a metal-oxide-semiconductor field-effect transistor (MOSFET) intercoupled to function as a capacitor having high gate input resistance, and wherein the MOSFET is positioned to receive the triggering voltage from the first circuit and provide the output voltage during ramp of the input voltage via gate leakage through the at least one transistor.

15 . The detector of claim 11 , further comprising:
an inverter positioned in a path of the output voltage; a third transistor positioned to restrain a rush-through current in the inverter; and a Schmitt trigger positioned in the path of the output voltage after the inverter to provide hysteresis and reduce noise associated with the output voltage.

16 . A power-on-reset detector circuit, comprising:
a tie-high cell and a capacitor arranged to receive an input signal and provide a triggering signal during ramp of the input signal; a first transistor and a second transistor arranged to receive the triggering signal and provide an output signal during ramp of the input signal by delaying ramp of the input signal using gate leakage through the first transistor; and a Schmitt trigger positioned in a path of the output signal to provide hysteresis and reduce noise associated with the output voltage.

17 . A power-on-reset detector circuit, comprising:
a tie-high cell and a capacitor arranged to receive an input signal and provide a triggering signal during ramp of the input signal; a first transistor and a second transistor arranged to receive the triggering signal and provide an output signal during ramp of the input signal by delaying ramp of the input signal using gate leakage through the first transistor; and a Schmitt trigger positioned in a path of the output signal to provide hysteresis and reduce noise associated with the output voltage, wherein the first transistor comprises a p-type metal-oxide-semiconductor (PMOS) transistor intercoupled to function as a capacitor having high gate input resistance, and wherein the second transistor comprises a n-type metal-oxide-semiconductor (NMOS) transistor.

18 . The circuit of claim 16 , wherein the output voltage corresponds to a reset timing signal, and wherein the gate leakage through the first transistor corresponds to a resistor-capacitor (RC) time constant configured to control the reset timing signal.

19 . A power-on-reset detector circuit, comprising:
a tie-high cell and a capacitor arranged to receive an input signal and provide a triggering signal during ramp of the input signal; a first transistor and a second transistor arranged to receive the

Assignees

• Advanced Risc Mach Ltd

Inventors

• Sandhu Bal S
• Myers James

Classifications

• H03K3/3565

  Bistables with hysteresis, e.g. Schmitt trigger · CPC title

• H03K3/013 Primary

  Modifications of generator to prevent operation by noise or interference · CPC title

• H03K17/223 Primary

  in field-effect transistor switches · CPC title

• G01R31/2856 Primary

  Internal circuit aspects, e.g. built-in test features; Test chips; Measuring material aspects, e.g. electro migration [EM] · CPC title

• G01R31/2882

  Testing timing characteristics · CPC title