Magnetoresistive memory device and manufacturing method of the same

Patent metadata

Field	Value
Publication number	US-2016308115-A1
Application number	US-201615066810-A
Country	US
Kind code	A1
Filing date	Mar 10, 2016
Priority date	Apr 16, 2015
Publication date	Oct 20, 2016
Grant date	—

Abstract

According to one embodiment, a magnetoresistive memory device includes bottom electrodes provided on a substrate, a magnetoresistive element provided on each of the bottom electrodes, a top electrode provided on each of the magnetoresistive elements, an insulating film provided on sides of the bottom electrode, the magnetoresistive element and, the top electrode, and a magnetic layer provided on the top electrode, the magnetic layer extending on the insulating film to connect a plurality of those of the top electrodes.

First claim

What is claimed is:

1 . A magnetoresistive memory device comprising:
a plurality of bottom electrodes provided on a substrate; a magnetoresistive element provided on each of the bottom electrodes; a top electrode provided on each of the magnetoresistive elements; an insulating film provided on sides of the bottom electrode, the magnetoresistive element and the top electrode; and a magnetic layer provided on the top electrode, the magnetic layer extending on the insulating film to connect a plurality of those of the top electrodes.

2 . The device of claim 1 , wherein
the magnetic layer is a shift-adjustment layer configured to suppress a stray magnetic field in the magnetoresistive element.

3 . The device of claim 1 , wherein
the magnetic layer contains one of Co, Fe and Ni.

4 . The device of claim 1 , wherein
the magnetic layer contains an alloy of CoPt or an alloy of CoFe.

5 . The device of claim 1 , wherein
the magnetic layer has an artificial lattice of alternately laminated Co and Pt or an artificial lattice of alternately laminated Co and Pd.

6 . The device of claim 1 , wherein
the magnetoresistive element has a stacked layer structure including a first magnetic layer, a second magnetic layer and a nonmagnetic layer between the first and second magnetic layers.

7 . The device of claim 6 , wherein
the magnetoresistive element is an MTJ element which includes a first magnetic material layer, a second magnetic material, layer, and a nonmagnetic material layer between the first magnetic material layer and the second. magnetic material layer, and comprises a third magnetic material layer on a side of the storage layer opposite to a side provided with the tunnel barrier layer or on a side of the reference layer opposite to a side provided with the tunnel barrier layer.

8 . The device of claim 2 , wherein
a metal film is provided on the shift-adjustment layer.

8 . The device of claim 8 , wherein
the metal film has a conductive rate higher than that of a material of the shift-adjustment layer.

10 . The device of claim 1 , wherein
the insulating film comprises a first insulating film provided on sides of the bottom electrode, and a second insulating film provided on sides of the magnetoresistive element and the top electrode.

11 . The device of claim 10 , wherein
the first and second insulating films are oxide films, and further comprising a nitride film provided between the first insulating film and the second insulating film and on side surfaces of the magnetoresistive element.

12 . A magnetoresistive memory device comprising:
a plurality of bottom electrodes provided on a substrate; a magnetoresistive element provided on each of the bottom electrodes; and an insulating film provided on sides of the bottom electrode and the magnetoresistive element; and a magnetic layer provided on the magnetoresistive element, the magnetic layer extending on the insulating film to connect a plurality of those of the magnetoresistive elements.

13 . The device of claim 12 , wherein
the magnetic layer is a shift-adjustment layer configured to suppress a stray magnetic field in the magnetoresistive element.

14 . The device of claim 12 , wherein
the magnetic layer contains an alloy of CoPt or an alloy of CoFe.

15 . The device of claim 12 , wherein
the magnetic layer has an artificial lattice of alternately laminated Co and Pt or an artificial lattice of alternately laminated Co and Pd.

16 . The device of claim 12 , wherein
the magnetoresistive element has a stacked layer structure including a first magnetic layer, a second magnetic layer and a nonmagnetic layer between the first and second magnetic layers.

17 . The device of claim 16 , wherein
the magnetoresistive element is an MTJ element which includes a first magnetic material layer, a second magnetic material layer, and a nonmagnetic material layer between the first magnetic material layer and the second magnetic material layer, and comprises a third magnetic material layer on a side of the storage layer opposite to a side provided with the tunnel barrier layer or a side of the reference layer opposite to a side provided with the tunnel barrier layer.

18 . The device of claim 13 , wherein
a metal film is provided on the shift-adjustment layer.

19 . A method of manufacturing a magnetoresistive memory device, the method comprising:
forming a first insulating film on a substrate; forming a plurality of contact holes in the first insulating film to reach a surface of the substrate; burying a bottom electrode in each of the contact holes; forming a magnetoresistive element on each of the bottom electrodes; forming a top electrode on each of the magnetoresistive elements; forming a second insulating film to bury sides of the magnetoresistive element and the top electrode; and forming a magnetic layer on the top electrode and the second insulating film to connect a plurality of those of the top electrodes.

20 . The device of claim 19 , wherein
the magnetic layer is a shift-adjustment layer configured to suppress a stray magnetic field in the magnetoresistive element.

21 . The device of claim 19 , wherein
the forming of the magnetic layer includes forming a material of the magnetic layer on the top electrode and the second insulating film and selectively etching the material of the magnetic layer by an IBE method.

22 . The device of claim. 19 , wherein
the forming of the magnetoresistive element includes forming a laminated film of a first magnetic material layer, a nonmagnetic material layer and a second magnetic material layer on the bottom electrode and the first insulating film, and selectively etching the laminated film by an IBE method.

Assignees

• Toshiba Kk

Inventors

• Kanaya Hiroyuki

Classifications

• H01L43/08

  Electricity · mapped topic

• H01L43/12

  Electricity · mapped topic

• H01L27/222

  Electricity · mapped topic

• H01L43/10

  Electricity · mapped topic

• H01L43/02 Primary

  Electricity · mapped topic