Light-emitting device and method for designing light emitting device

US2016308097A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2016308097-A1
Application numberUS-201615191734-A
CountryUS
Kind codeA1
Filing dateJun 24, 2016
Priority dateDec 27, 2013
Publication dateOct 20, 2016
Grant date

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  1. Title

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  2. Abstract

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  4. Key dates

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  5. First independent claim

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Abstract

Official abstract text for this publication.

It is an object of the present invention to improve light source efficiency of “a light-emitting device capable of realizing a natural, vivid, highly visible and comfortable appearance of colors or an appearance of objects” already arrived at by adopting a spectral power distribution having a shape completely different from the shape of conventionally known spectral power distributions while maintaining favorable color appearance characteristics.

First claim

Opening claim text (preview).

1 . A light-emitting device at least including, as light-emitting elements: a blue semiconductor light-emitting element; a green phosphor; and a red phosphor, wherein light emitted from the light-emitting device in a main radiant direction satisfies all of Conditions 1 to 4 below Condition 1: when λ denotes wavelength, φ SSL1 (λ) denotes a spectral power distribution of light emitted from the light-emitting device in the main radiant direction, φ ref1 (λ) denotes a spectral power distribution of reference light which is selected in accordance with a correlated color temperature T SSL1 of the light emitted from the light-emitting device in the main radiant direction, (X SSL1 , Y SSL1 , Z SSL1 ) denote tristimulus values of the light emitted from the light-emitting device in the main radiant direction, and (X ref1 , Y ref1 , Z ref1 ) denote tristimulus values of the reference light which is selected in accordance with T SSL1 of the light emitted from the light-emitting device in the main radiant direction, and a normalized spectral power distribution S SSL1 (λ) of the light emitted from the light-emitting device in the main radiant direction, a normalized spectral power distribution S ref1 (λ) of the reference light which is selected in accordance with T SSL1 (K) of the light emitted from the light-emitting device in the main radiant direction, and a difference ΔS SSL1 (λ) of between normalized spectral power distributions are respectively defined as S SSL1 (λ)=φ SSL1 (λ)/ Y SSL1 S ref1 (λ)=φ ref1 (λ)/ Y ref1 Δ S SSL1 (λ)= S ref1 (λ)− S SSL1 (λ), and in a case where λ SSL1-RL-max (nm) represents a wavelength that provides a longest wavelength local maximum value of S SSL1 (λ) in a wavelength range of 380 nm or more and 780 nm or less, and when a wavelength Λ4 that is represented by S SSL1 (λ SSL1-RL-max )/2 exists on a longer wavelength-side of λ SSL1-RL-max , an index A cg (φ SSL1 (λ)) represented by the following formula (1-1) satisfies −10.0< A cg (φ SSL1 (λ))≦120.0, but in a case where λ SSL1-RL-max (nm) represents a wavelength that provides the longest wavelength local maximum value of S SSL1 (λ) in a wavelength range of 380 nm or more and 780 nm or less, and when the wavelength Λ4 that is represented by S SSL1 (λ SSL1-RL-max )/2 does not exist on the longer wavelength-side of λ SSL1-RL-max , an index A cg (φ SSL1 (λ)) represented by the following formula (1-2) satisfies −10.0< A cg (φ SSL1 (λ))≦120.0; [Expression 1] A cg (φ SSL1 (λ))=∫ 380 495 ΔS SSL1 (λ) dλ+∫ 495 590 (−Δ S SSL1 (λ)) dλ+∫ 590 Λ 4Δ S SSL1 (λ) dλ   (1-1) [Expression 2] A cg (φ SSL1 (λ))=∫ 380 495 ΔS SSL1 (λ) dλ+∫ 495 590 (−Δ S SSL1 (λ)) dλ+∫ 590 780 ΔS SSL1 (λ) dλ    (1-2) Condition 2: a distance D uv (φ SSL1 (λ)) of the spectral power distribution φ SSL1 (λ) of light from a black-body radiation locus defined by ANSI C78.377 satisfies −0.0220≦ D uv (φ SSL1 (λ))≦−0.0070; Condition 3: when a maximum value of spectral intensity in a range of 430 nm or more and 495 nm or less is defined as φ SSL1-BM-max and a minimum value of spectral intensity in a range of 465 nm or more and 525 nm or less is defined as φ SSL1-BG-min , the spectral power distribution φ SSL1 (λ) of light satisfies 0.2250≦φ SSL1-BG-min /φ SSL1-BM-max ≦0.7000; and Condition 4: in the spectral power distribution φ SSL1 (λ) of light, when a maximum value of spectral intensity in a range of 590 nm or more and 780 nm or less is defined as φ SSL1-RM-max , a wavelength λ SSL1-RM-max that provides φ SSL1-RM-max satisfies 605 (nm)≦λ SSL1-RM-max ≦653 (nm). 2 . The light-emitting device according to claim 1 , wherein in Condition 2, −0.0184≦ D uv (φ SSL1 (λ))≦−0.0084 is satisfied. 3 . The light-emitting device according to claim 1 , wherein in Condition 4, 625 (nm)≦λ SSL1-RM-max ≦647 (nm) is satisfied. 4 . The light-emitting device according to claim 1 , wherein Condition 5 below is satisfied Condition 5: in the spectral power distribution φ SSL1 (λ) of light, a wavelength λ SSL1-BM-max that provides φ SSL1-BM-max satisfies 430 (nm)≦λ SSL1-BM-max ≦480 (nm). 5 . The light-emitting device according to claim 1 , wherein Condition 6 below is satisfied Condition 6: 0.1800≦φ SSL1-BG-min /φ SSL1-RM-max ≦0.8500. 6 . The light-emitting device according to claim 5 , wherein in Condition 6, 0.1917≦φ SSL1-BG-min /φ SSL1-RM-max ≦0.7300 is satisfied. 7 . The light-emitting device according to claim 1 , wherein a luminous efficacy of radiation K SSL1 (lm/W) in a wavelength range of 380 nm or more and 780 nm or less, which is derived from φ SSL1 (λ), satisfies Condition 7 Condition 7: 210.0 lm/W≦ K SSL1 ≦290.0 lm/W. 8 . The light-emitting device according to claim 1 , wherein T SSL1 (K) satisfies Condition 8 below Condition 8: 2600 K≦ T SSL1 ≦7700 K. 9 . The light-emitting device according to claim 1 , wherein φ SSL1 (λ) does not have effective intensity derived from the light-emitting element in a range of 380 nm or more and 405 nm or less. 10 . The light-emitting device according to claim 1 , wherein the blue semiconductor light-emitting element is configured such that a dominant wavelength λ CHIP-BM-dom of the blue semiconductor light-emitting element alone when pulse-driven is 445 nm or more and 475 nm or less. 11 . The light-emitting device according to claim 1 , wherein the green phosphor is a wide-band green phosphor. 12 . The light-emitting device according to claim 1 , wherein the green phosphor is configured such that a wavelength λ PHOS-GM-max that provides maximum emission intensity when light is excited by the green phosphor alone is 511 nm or more and 543 nm or less, and a full-width at half-maximum W PHOS-GM-fwhm thereof is 90 nm or more and 110 nm or less. 13 . The light-emitting device according to claim 1 , wherein the light-emitting device includes substantially no yellow phosphor. 14 . The light-emitting device according to claim 1 , wherein the red phosphor is configured such that a wavelength λ PHOS-RM-max that provides maximum emission intensity when light is excited by the red phosphor alone is 622 nm or more and 663 nm or less, and a full-width at half-maximum W PHOS-RM-fwhm thereof is 80 nm or more and 105 nm or less. 15 . The light-emitting device according to claim 1 , wherein the blue semiconductor light-emitting element is an AlInGaN light-emitting element. 16 . The light-emitting device according to claim 1 , wherein the green phosphor is Ca 3 (Sc,Mg) 2 Si 3 O 12 :Ce (CSMS phosphor), CaSc 2 O 4 :Ce (CSO phosphor), Lu 3 Al 5 O 12 :Ce (LuAG phosphor), or Y 3 (Al,Ga) 5 O 12 :Ce (G-YAG phosphor). 17 . The light-emitting device according to claim 1 , wherein the red phosphor includes (Sr,Ca)AlSiN 3 :Eu (SCASN phosphor), CaAlSi(ON) 3 :Eu (CASON phosphor), or CaAlSiN 3 :Eu (CASN phosphor). 18 . The light-emitting device according to claim 1 , wherein the blue semiconductor light-emitting element is an AlInGaN light-emitting element with a dominant wavelength λ CHIP-BM-dom when the blue semiconductor light-emitting element alone is pulse-driven, of 452.5 nm or more and 470 nm or less, the green phosphor is CaSc 2 O 4 :Ce (CSO phosphor) or Lu 3 Al 5 O 12 :Ce (LuAG phosphor) with a wavelength X PHOS-GM-max that provides maximum emission intensity when light is excited by the green phosphor alone, of

Assignees

Inventors

Classifications

  • Oxides (C09K11/7768 takes precedence) · CPC title

  • containing inorganic luminescent materials · CPC title

  • Silicates · CPC title

  • Aluminates · CPC title

  • Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides · CPC title

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What does patent US2016308097A1 cover?
It is an object of the present invention to improve light source efficiency of “a light-emitting device capable of realizing a natural, vivid, highly visible and comfortable appearance of colors or an appearance of objects” already arrived at by adopting a spectral power distribution having a shape completely different from the shape of conventionally known spectral power distributions while ma…
Who is the assignee on this patent?
Citizen Electronics
What technology area does this patent fall under?
Primary CPC classification H10H20/8513. Mapped technology areas include Electricity.
When was this patent published?
Publication date Thu Oct 20 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).