Semiconductor structure with sensor chip and landing pads
US-9331256-B2 · May 3, 2016 · US
US2016307983A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016307983-A1 |
| Application number | US-201514655735-A |
| Country | US |
| Kind code | A1 |
| Filing date | Apr 1, 2015 |
| Priority date | Jan 28, 2015 |
| Publication date | Oct 20, 2016 |
| Grant date | — |
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The present invention provides an OLED pixel structure, comprising red, green, blue sub pixel areas, and the red, the green, the blue sub pixel areas respectively comprise a substrate, an anode formed on the substrate, a flat layer formed on the anode, an organic light emitting layer formed on the flat layer and a cathode formed on the organic light emitting layer, and an aperture area is formed on the flat layer, and the organic light emitting layer contacts the anode through the aperture area, and the anode comprises a positive electrode and a positive electrode compensation area coupled to the positive electrode, and the cathode, the positive electrode compensation area and a sandwiched layer between the cathode and the positive electrode compensation area constitute a compensation capacitor, and the compensation capacitor respectively makes total capacitance values of the red, green, blue sub pixel areas are equivalent to reach the capacitance value required by an drive circuit of the OLED element.
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What is claimed is: 1 . An OLED pixel structure, comprising red, green, blue sub pixel areas, and the red, the green, the blue sub pixel areas respectively comprise a substrate, an anode formed on the substrate, a flat layer formed on the anode, an organic light emitting layer formed on the flat layer and a cathode formed on the organic light emitting layer, and an aperture area is formed on the flat layer, and the organic light emitting layer contacts the anode through the aperture area, and the anode comprises a positive electrode and a positive electrode compensation area coupled to the positive electrode, and the cathode, the positive electrode compensation area and a sandwiched layer between the cathode and the positive electrode compensation area constitute a compensation capacitor C p , and the compensation capacitor C p respectively makes total capacitance values of the red, green, blue sub pixel areas are equivalent to reach the capacitance value C total required by an OLED drive circuit. 2 . The OLED pixel structure according to claim 1 , wherein the sandwiched layer is the organic light emitting layer and the flat layer, and the cathode, the positive electrode compensation area and the organic light emitting layer and the flat layer between the cathode and the positive electrode compensation area constitute the compensation capacitor C p . 3 . The OLED pixel structure according to claim 1 , wherein an insulative layer is located on the positive electrode compensation area, and the sandwiched layer is the organic light emitting layer and the insulative layer, and the cathode, the positive electrode compensation area and the organic light emitting layer and the insulative layer between the cathode and the positive electrode compensation area constitute the compensation capacitor C p . 4 . The OLED pixel structure according to claim 3 , wherein material of the insulative layer is silicon oxide, and a thickness of the insulative layer is smaller than a thickness of the flat layer. 5 . The OLED pixel structure according to claim 1 , wherein material of the positive electrode is Indium Tin Oxide. 6 . The OLED pixel structure according to claim 1 , wherein material of the flat layer is organic material. 7 . The OLED pixel structure according to claim 1 , wherein proportions of the positive electrode compensation areas of the red, the green, the blue sub pixel areas are different. 8 . The OLED pixel structure according to claim 7 , wherein with the capacitance value C total required by the OLED drive circuit and the self capacitor C r of the OLED in the red sub pixel area, the compensation capacitor C p =C total -C r is calculated, and the proportion of the positive electrode compensation area of the red sub pixel area is calculated according to a parallel plate capacitor calculation formula. 9 . The OLED pixel structure according to claim 7 , wherein with the capacitance value C total required by the OLED drive circuit and the self capacitor C g of the OLED in the green sub pixel area, the compensation capacitor C p =C total -C g is calculated, and the proportion of the positive electrode compensation area of the green sub pixel area is calculated according to a parallel plate capacitor calculation formula. 10 . The OLED pixel structure according to claim 7 , wherein with the capacitance value C total required by the OLED drive circuit and the self capacitor C b of the OLED in the blue sub pixel area, the compensation capacitor C p =C total -C b is calculated, and the proportion of the positive electrode compensation area of the blue sub pixel area is calculated according to a parallel plate capacitor calculation formula. 11 . An OLED pixel structure, comprising red, green, blue sub pixel areas, and the red, the green, the blue sub pixel areas respectively comprise a substrate, an anode formed on the substrate, a flat layer formed on the anode, an organic light emitting layer formed on the flat layer and a cathode formed on the organic light emitting layer, and an aperture area is formed on the flat layer, and the organic light emitting layer contacts the anode through the aperture area, and the anode comprises a positive electrode and a positive electrode compensation area coupled to the positive electrode, and the cathode, the positive electrode compensation area and a sandwiched layer between the cathode and the positive electrode compensation area constitute a compensation capacitor C p , and the compensation capacitor C p respectively makes total capacitance values of the red, green, blue sub pixel areas are equivalent to reach the capacitance value C total required by an OLED drive circuit; wherein the sandwiched layer is the organic light emitting layer and the flat layer, and the cathode, the positive electrode compensation area and the organic light emitting layer and the flat layer between the cathode and the positive electrode compensation area constitute the compensation capacitor C p ; wherein material of the positive electrode is Indium Tin Oxide. 12 . The OLED pixel structure according to claim 11 , wherein material of the flat layer is organic material. 13 . The OLED pixel structure according to claim 11 , wherein proportions of the positive electrode compensation areas of the red, the green, the blue sub pixel areas are different. 14 . The OLED pixel structure according to claim 13 , wherein with the capacitance value C total required by the OLED drive circuit and the self capacitor C r of the OLED in the red sub pixel area, the compensation capacitor C p =C total -C r is calculated, and the proportion of the positive electrode compensation area of the red sub pixel area is calculated according to a parallel plate capacitor calculation formula. 15 . The OLED pixel structure according to claim 13 , wherein with the capacitance value C total required by the OLED drive circuit and the self capacitor C g of the OLED in the green sub pixel area, the compensation capacitor C p =C total -C g is calculated, and the proportion of the positive electrode compensation area of the green sub pixel area is calculated according to a parallel plate capacitor calculation formula. 16 . The OLED pixel structure according to claim 13 , wherein with the capacitance value C total required by the OLED drive circuit and the self capacitor C b of the OLED in the blue sub pixel area, the compensation capacitor C p =C total -C b is calculated, and the proportion of the positive electrode compensation area of the blue sub pixel area is calculated according to a parallel plate capacitor calculation formula.
characterised by their shape · CPC title
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