Method of Manufacturing Semiconductor Devices

Patent metadata

Field	Value
Publication number	US-2016307773-A1
Application number	US-201614990353-A
Country	US
Kind code	A1
Filing date	Jan 7, 2016
Priority date	Apr 15, 2015
Publication date	Oct 20, 2016
Grant date	—

Abstract

A substrate having an insulating layer including an oxide is loaded into a chamber, and at least a part of the insulating layer is removed by injecting a process gas including an etching source gas into the chamber. The removal process is performed in a pulse type in which a first period and a second period are repeated a plurality of times. The etching source gas is supplied at a first flow rate during the first period and is supplied at a second flow rate less than the first flow rate during the second period. A temperature of the inside of the chamber remains at 100° C. or more during the removal process.

First claim

1 . A method of manufacturing a semiconductor device comprising:
loading a substrate into a chamber, on which an insulating layer comprising an oxide is formed; and injecting a process gas comprising an etching source gas into the chamber to remove at least a portion of the insulating layer, wherein the process of removing at least a portion of the insulating layer is performed in a pulse type in which a first period and a second period are repeated a plurality of times, wherein the etching source gas is supplied at a first flow rate during the first period and is supplied at a second flow rate less than the first flow rate during the second period, wherein a temperature of the inside of the chamber remains at 100° C. or more during the process of the removing the portion of the insulating layer, wherein a pressure of the process gas in the chamber during the first and second periods is changed in such a way that a third period and a fourth period are alternately repeated, and wherein the pressure of the process gas in the chamber remains at a first pressure during the third period and remains at a second pressure lower than the first pressure during the fourth period.

2 . The method of manufacturing a semiconductor device of claim 1 , wherein the second period is an off state in which supply of the etching source gas is interrupted such that the supply of the etching source gas is repeatedly turned-on and turned-off during the process of removing the at least a portion of the insulating layer.

3 . The method of manufacturing a semiconductor device of claim 1 , wherein the second period is longer than the first period.

4 . The method of manufacturing a semiconductor device of claim 3 , wherein the second period is from 3 to 15 times as long as the first period.

5 . The method of manufacturing a semiconductor device of claim 3 , wherein the first period ranges from 1 second to 20 seconds, and the second period ranges from 5 seconds to 60 seconds.

6 . The method of manufacturing a semiconductor device of claim 1 , wherein sublimation of etching by-products generated while the insulating layer is removed, proceeds during the second period.

7 . The method of manufacturing a semiconductor device of claim 1 , wherein the process gas is supplied into the chamber in a gas state that does not become plasma, or by a remote plasma method.

8 . The method of manufacturing a semiconductor device of claim 1 , wherein the etching source gas comprises HF and NH 3 or comprises at least two of NF 3 , NH 3 , HF or H 2 .

9 - 10 . (canceled)

11 . The method of manufacturing a semiconductor device of claim 1 , wherein the process gas is purged during the fourth period.

12 . The method of manufacturing a semiconductor device of claim 1 , wherein a start point and an end point of the third period is the same as a start point and an end point of the first period, respectively, and
wherein a start point and an end point of the fourth period is the same as a start point and an end point of the second period, respectively.

13 . The method of manufacturing a semiconductor device of claim 1 , wherein a start point and an end point of the third period are later than a start point and an end point of the first period, respectively, and
wherein a start point and an end point of the fourth period are later than a start point and an end point of the second period, respectively.

14 . A dry cleaning method comprising:
loading a substrate into a chamber, on which an insulating layer comprising an oxide is formed; and removing at least a portion of the insulating layer by injecting a process gas comprising an etching source gas into the chamber, wherein the process of removing at least a portion of the insulating layer is performed in a pulse type in which a first period comprising an on-state and a second period comprising an off-state of supplying of the etching source gas are alternately repeated a plurality of times, wherein a temperature of the inside of the chamber remains at 100° C. or more during the process of removing the at least a part of the insulating layer, wherein a pressure of the process gas in the chamber during the first and second periods is changed in such a way that a third period and a fourth period are alternately repeated, and wherein the pressure of the process gas in the chamber remains at a first pressure during the third period and remains at a second pressure lower than the first pressure during the fourth period.

15 . The dry cleaning method of claim 14 , wherein a pulse interval corresponding to the on-state of the supplying of the etching source gas is less than a pulse interval corresponding to the off-state of the supplying of the etching source gas.

16 . The dry cleaning method of claim 14 , wherein a temperature of the inside of the chamber remains at 200° C. or less during the process of removing at least a portion of the insulating layer.

17 . The dry cleaning method of claim 14 , wherein sublimation of etching by-products generated while the insulating layer is removed, proceeds during the off-state.

18 . The dry cleaning method of claim 14 , wherein the process gas is purged during the off-state.

19 . The dry cleaning method of claim 14 , wherein the etching source gas comprises HF and NH 3 or comprises at least two of NF 3 , NH 3 , HF or H 2 .

20 . A method of manufacturing a semiconductor device comprising:
forming a first layer and a second layer comprising a material having an etch selectivity with respective to the first layer, on a substrate, the first layer comprising an insulating material and horizontally adjacent to the second layer; and removing at least a portion of the first layer, wherein the process of removing the at least a portion of the first layer comprises: loading a substrate on which the first and second layers are formed, into a chamber; and supplying a process gas comprising an etching source gas into the chamber in a pulse type in which a first period and a second period are repeated a plurality of times, wherein the etching source gas is supplied at a first flow rate during the first period and is supplied at a second flow rate less than the first flow rate during the second period, wherein a temperature of the inside of the chamber remains at 100° C. or more during the removing the at least a part of the first layer, wherein a pressure of the process gas in the chamber during the first and second periods is changed in such a way that a third period and a fourth period are alternately repeated, and wherein the pressure of the process gas in the chamber remains at a first pressure during the third period and remains at a second pressure lower than the first pressure during the fourth period.

21 . The method of manufacturing a semiconductor device of claim 20 , wherein a start point and an end point of the third period is the same as a start point and an end point of the first period, respectively, and
wherein a start point and an end point of the fourth period is the same as a start point and an end point of the second period, respectively.

22 . The method of manufacturing a semiconductor device of claim 20 , wherein a start point and an end point of the third period are later than a start point and an end point of the first period, respectively, and
wherein a start point and an end point of the fourth period are later than a start point and an end point of the second period, respectively.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Lee Mongsup
• Son Yoonho
• Lee Sang-Jun
• Kang Munkwon
• Kim Kyunghyun
• Hwang Inseak

Classifications

• H10P70/234

  the processing being the formation of vias or contact holes · CPC title

• H10W20/072

  of dielectric parts comprising air gaps · CPC title

• H10W20/46

  comprising air gaps · CPC title

• H10P50/283 Primary

  by chemical means · CPC title

• H01L21/31116 Primary

  Electricity · mapped topic