Single platform, multiple cycle spacer deposition and etch

Patent metadata

Field	Value
Publication number	US-2016307768-A1
Application number	US-201615194456-A
Country	US
Kind code	A1
Filing date	Jun 27, 2016
Priority date	Jul 24, 2014
Publication date	Oct 20, 2016
Grant date	—

Abstract

A first portion of a multiple cycle spacer is formed on a sidewall of a patterned feature over a substrate. A spacer layer is deposited on the first portion using a first plasma process. The spacer layer is etched to form a second portion of the multiple cycle spacer on the first portion using a second plasma process. A cycle comprising depositing and etching of the spacer layer is continuously repeated until the multiple cycle spacer is formed.

First claim

1 - 6 . (canceled)

7 . An apparatus to manufacture an electronic device, comprising:
a plurality of mask features on a device layer on a substrate, each of the plurality of mask features comprising
a top surface;
a bottom surface;
a first side surface and a second side surface coupled to the top surface and the bottom surface;
a plurality of spacer layers between the top surface and the bottom surface, the plurality of spacer layers comprising a first spacer layer on a second spacer layer on a third spacer layer, wherein the first side surface is a part of the first spacer layer and the second side surface is a part of the third spacer layer.

8 . The apparatus of claim 7 , wherein
the width of the plurality of spacer layers at the top surface is substantially similar to the width of the plurality of spacer layers at the bottom surface.

9 . The apparatus of claim 7 , wherein the top surface is substantially parallel to the device layer.

10 . The apparatus of claim 7 , wherein the bottom surface is on the device layer.

11 . The apparatus of claim 7 , wherein the first side surface is substantially perpendicular to the device layer.

12 . The apparatus of claim 7 , wherein the thickness of each of the spacer layers is from 5 nanometers to 10 nanometers.

13 . The apparatus of claim 7 , wherein each of the spacer layers is a nitride layer.

14 . The apparatus of claim 7 , wherein the width of the plurality of spacer layers is from 20 nanometers to 150 nanometers.

15 . The apparatus of claim 7 , wherein the plurality of mask features are separated by a space.

16 . The apparatus of claim 7 , wherein a material of the second spacer layer is the same as the material of the first spacer layer.

17 . The apparatus of claim 7 , wherein the plurality of spacer layers comprise at least 5 spacer layers.

18 . The apparatus of claim 7 , wherein the top surface is at a distance away from the device layer.

19 . The apparatus of claim 7 , further comprising
a device feature underneath each of the mask features.

Assignees

• Applied Materials Inc

Inventors

• Chen Hao
• Ying Chentsau (Chris)
• Nemani Srinivas D
• Yieh Ellie Y

Classifications

• H10P76/4085

  characterised by the processes involved to create the masks · CPC title

• H10P72/3302

  Mechanical parts of transfer devices · CPC title

• H10P72/0468

  comprising a chamber adapted to a particular process · CPC title

• H10P72/0421

  for drying etching · CPC title

• H10P50/642

  Chemical etching · CPC title