Uv radiation device

Patent metadata

Field	Value
Publication number	US-2016303394-A1
Application number	US-201414889664-A
Country	US
Kind code	A1
Filing date	May 6, 2014
Priority date	May 13, 2013
Publication date	Oct 20, 2016
Grant date	—

Abstract

The invention relates to an UV radiation device, comprising an LED comprising a nitridic material which is arranged to emit first UV radiation in a wavelength range of 200 nm-300 nm and a luminescent material doped with at least one of the following activators selected out of the group Eu 2+ , Ce 3+ , Pr 3+ , Nd 3+ , Gd 3+ , Tm 3+ , Sb 3+ , Tl + , Pb 2+ and Bi 3+ , wherein the luminescent material is configured to convert at least a part of the primary UV radiation into secondary UV radiation, the primary UV radiation and the secondary UV radiation having a different spectral distribution.

First claim

1 . An UV radiation device for generating UV radiation in a wavelength range from 200-420 nm, comprising
an LED comprising a nitridic material which is arranged to emit first UV radiation in a wavelength range of 200 nm-300 nm; a luminescent material configured to convert at least a part of the first UV radiation into second UV radiation, the first UV radiation and the second UV radiation having a different spectral distribution, wherein the luminescent material comprises at least one material selected out of the group comprising LiLuF4:Pr; CaSO4:Pr,Na; SrSO4:Pr,Na; BaSO4:Pr,Na; LaPO4:Pr; YPO4:Pr; LuPO4:Pr; KYF4:Pr; LuPO4:Bi; CaLi2SiO4:Pr,Na; KY3F10:Pr; YPO4:Bi; YAlO3:Pr; LaMgAl11O19:Pr; (Ba1-xSrx)2SiO4:Pr,Na; NaYF4:Pr; SrAl12O19:Pr,Na; Sr4Al24O25:Pr,Na; LuBO3:Pr; YBO3:Pr; Y2SiO5:Pr; Lu2SiO5:Pr; Y2Si2O7:Pr; Lu2Si2O7:Pr; Lu3Al5O12:Bi,Sc; Lu3Al3Ga2O12:Pr; Lu3Al4GaO12:Pr; SrMgAl10O17:Ce,Na; Lu3Al5O12:Pr; LiYF4:Ce, LuF3:Ce; YBO3:Gd; Lu3Al5O12:Gd; Y3Al5O12:Gd; LaMgAl11O19:Gd; LaAlO3:Gd; YPO4:Gd; GdPO4:Nd; LaB3O6:Gd,Bi; SrAl12O19:Ce; LaPO4:Ce; GdMgB5O10:Ce; LuPO4:Ce; CaF2:Ce; Y3Al5O12:Pr; LaCl3:Ce; SrCl2:Ce; (La1-xGdx)PO4:Ce; Ca2P2O7:Eu; YPO4:Ce; LaMgAl11O19:Ce; BaSi2O5:Pb; Sr2MgSi2O7:Pb; SrB4O7:Eu; BaSO4:Eu; SrSO4:Eu; CaSO4:Eu; (Sr1-x Mgx)2P2O7:Eu; YAl3(BO3)4:Gd,Pr; LaPO4:Tm; LaMgAl11O19:Gd,Bi; LaMgAl11O19:Gd,Pr; YAl3(BO3)4:Gd,Bi, wherein x is in the range of 0 to 1.0.

2 . The UV radiation device of claim 1 , wherein the nitridic material is selected out of the group (Al,Ga,In)N and BN.

3 . The UV radiation device of claim 2 , furthermore comprising a polymer selected out of the group comprising PVF, PVDF, PTFE, PFA, FEP, ETFE, PEEK, PFPE or mixtures thereof.

4 . The UV radiation device of claim 3 wherein the luminescent material is essentially provided in particle form with the particles having an average particle size in the range of 0.1 μm-100 μm, more preferably in the range of 10 μm-50 μm.

5 . The UV radiation device of claim 4 , wherein the luminescent material is essentially provided in particle form with the particles being coated by an inorganic material with a band gap of ≧5.0 eV.

6 . The UV radiation device of claim 5 , wherein the luminescent material is essentially provided in particle form with the particles being coated by an inorganic material selected out of the group comprising AlN, Al2O3, Ln2O3 (Ln=Sc, Y, Lu), MgO, (Y1-xLux)3(Al1-yScy)5O12, SiO2 or mixtures thereof, wherein x is in the range of 0 to 1.0.

7 . The UV radiation device of claim 2 , further comprising an encapsulation material for encapsulation of the LED, and scattering particles that are dispersed in the encapsulation material.

8 . The UV radiation device of claim 7 , wherein the LED wherein the nitridic material comprises AlxGa1-x-yInyN, with 0≦x+y≦1.

9 . The UV radiation device of claim 8 , wherein the scattering particles comprise one or more of the materials selected from boron nitride, alumina and aluminum.

10 . The UV radiation device of claim 9 , further comprising a first surface for mounting of the LED, a second surface opposite to the first surface for exiting the UV radiation during operation of the device, and a UV reflective surface between the first surface and the second surface, and wherein the concentration of the scattering particles in the encapsulation material is graded from a first concentration in a first portion of the encapsulation material to a second concentration in a second portion of the encapsulation material, such that the first concentration is higher than the second concentration, and wherein the first portion is positioned between the reflective surface and a light-emitting surface of the LED substantially parallel to the reflective surface, and wherein the second portion is positioned between the second surface and a light-emitting surface of the LED substantially parallel to the second surface.

11 . The UV radiation device of claim 10 , wherein only the first portion of the encapsulation material comprises scattering particles.

12 . The UV radiation device of claim 7 , wherein the luminescent material comprises luminescent material particles that are dispersed in the encapsulation material or that dispersed in a layer forming a light exit surface during operation of the device.

13 . A system comprising a UV radiation device according to claim 12 , the system being used in one or more of the following applications:
medical therapy; cosmetic skin treatment; water, surface, and/or air purification; photochemical synthesis of chemicals.

14 . A system according to claim 13 , further comprising a UV interference filter.

15 . The UV radiation device according to claim 12 , wherein the encapsulation material comprises an UV transparent polymer, glass or ceramic material.

Assignees

• Koninklijke Philips Nv

Inventors

• Hayashi Daiyu
• Yu Jianghong
• Greuel Georg
• JüSTEL THOMAS
• RONDA Cornelis Reinder Reinder

Classifications

• C09K11/08

  containing inorganic luminescent materials · CPC title

• A61N5/0614

  Tanning · CPC title

• A61N2005/065

  Light sources therefor · CPC title

• A61N2005/0651

  Diodes · CPC title

• A61N5/0616 Primary

  Skin treatment other than tanning · CPC title