System and method for depositing a material on a substrate

Patent metadata

Field	Value
Publication number	US-2016300714-A1
Application number	US-201615095805-A
Country	US
Kind code	A1
Filing date	Apr 11, 2016
Priority date	Jan 15, 2008
Publication date	Oct 13, 2016
Grant date	—

Abstract

A method and apparatus for depositing a film on a substrate includes a plasma source positioned proximate to a distributor configured to provide a semiconductor coating on a substrate.

First claim

1 - 28 . (canceled)

29 . A method of depositing a material on a substrate comprising: providing a first power source configured to heat a distributor, the distributor configured to deposit a semiconductor coating on a substrate; providing a plasma source including an electrode that is electrically independent from the first power source; and exciting a plasma within a volume proximate to the distributor.

30 . The method of claim 29 , wherein the plasma source further comprises an additional electrode configured to bias the plasma with respect to the substrate.

31 . The method of claim 29 , wherein the electrode includes a non-metallic material.

32 . The method of claim 29 , wherein the electrode includes carbon.

33 . The method of claim 29 , wherein the electrode is a backcap over the distributor.

34 . The method of claim 33 , wherein the backcap is a graphite backcap.

35 . The method of claim 29 , wherein the distributor includes a pair of sheath tubes including a first sheath tube and a second sheath tube.

36 . The method of claim 35 , wherein the electrode is a spacer between the first sheath tube and the second sheath tube.

37 . The method of claim 36 , wherein the spacer is a graphite spacer.

38 . The method of claim 35 , wherein the electrode is a backcap over the first sheath tube and the second sheath tube.

39 . The method of claim 29 , wherein the distributor includes a pair of sheath tubes including a first sheath tube and a second sheath tube, and the plasma source includes three graphite components electrically isolated from one another.

40 . The method of claim 39 , wherein the first graphite component is a first spacer separating the first sheath tube from the second sheath tube, the second graphite component is a second spacer separating the first sheath tube from the second sheath tube, and the third graphite component is a backcap over the first sheath tube and the second sheath tube.

41 . The method of claim 40 , further comprising an insulator between the backcap and each of the spacers.

42 . The method of claim 29 , wherein the distributor includes at least one distribution hole configured to provide a semiconductor coating on a substrate.

43 . The method of claim 29 , wherein the plasma source is driven by direct current.

44 . The method of claim 29 , wherein the plasma source is driven by alternating current.

45 . The method of claim 29 , wherein the plasma source is driven by pulsed direct current.

46 . The method of claim 29 , wherein the plasma source is driven by radiofrequency electrical excitation.

47 . The method of claim 29 , further comprising a conveyor configured to transport the substrate past the distributor.

48 . The method of claim 29 , wherein the distributor is positioned within a deposition chamber, the deposition chamber including an entry through which the substrates to be coated are introduced into the deposition chamber; and the deposition chamber including an exit through which the coated substrates leave the deposition chamber.

49 . The method of claim 29 , wherein the distributor includes a ceramic tube.

50 . The method of claim 29 , wherein the distributor includes mullite tube.

51 . The method of claim 29 , wherein the distributor includes a ceramic sheath tube.

52 . The method of claim 29 , further comprising a heater positioned within the distributor.

53 . The method of claim 29 , wherein the plasma source is configured to generate plasma in a region less than 10 centimeters from a substrate.

54 . The method of claim 29 , wherein the plasma source is configured to generate plasma in a region less than 7 centimeters from a substrate.

55 . The method of claim 29 , wherein the plasma source is configured to generate plasma in a region less than 5 centimeters from a substrate.

56 . The method of claim 29 , wherein the plasma source is configured to generate plasma in a region less than 2 centimeters from a substrate.

Assignees

• First Solar Inc

Inventors

• Powell Rick C

Classifications

• H10P14/22 Primary

  using physical deposition, e.g. vacuum deposition or sputtering · CPC title

• H01J37/32623

  Mechanical discharge control means · CPC title

• C23C14/0629

  of zinc, cadmium or mercury · CPC title

• H01J37/32009 Primary

  Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources (plasma generation in general H05H1/24) · CPC title

• H01J37/3255

  Material · CPC title