Switching device and electronic circuit

Patent metadata

Field	Value
Publication number	US-2016294379-A1
Application number	US-201415037592-A
Country	US
Kind code	A1
Filing date	Nov 18, 2014
Priority date	Nov 20, 2013
Publication date	Oct 6, 2016
Grant date	—

Abstract

A switching device 1 includes a SiC semiconductor chip 11 which has a gate pad 14, a source pad 13 and a drain pad 12 and in which on-off control is performed between the source and the drain by applying a drive voltage between the gate and the source in a state where a potential difference is applied between the source and the drain, a sense source terminal 4 electrically connected to the source pad 13 for applying the drive voltage, and an external resistance (source wire 16) that is interposed in a current path between the sense source terminal 4 and the source pad 13, is separated from sense source terminal 4, and has a predetermined size.

First claim

1 . A switching device including: a switching element which has a first electrode, a second electrode and a third electrode and in which on-oft control is performed between the second electrode and the third electrode by applying a drive voltage between the first electrode and the second electrode in a state where a potential difference is applied between the second electrode and the third electrode;
a drive terminal electrically connected to the second electrode for applying the drive voltage; and a short-circuit capacity improving resistance that is interposed in a current path between the drive terminal and the second electrode, is disposed in a position separated from at least one of the drive terminal and the second electrode, and has a predetermined resistance value.

2 . The switching device according to claim 1 , including: an output terminal for outputting a current flowing by the on control; and
a first conductive member connecting the output terminal and the second electrode, wherein the short-circuit capacity improving resistance includes the first conductive member.

3 . The switching device according to claim 2 , wherein the first conductive member includes a bonding wire stretched between the output terminal and the second electrode.

4 . The switching device according to claim 1 , including: a resin package sealing the switching element, the drive terminal and the short-circuit capacity improving resistance.

5 . The switching device according to claim 1 , wherein the first electrode is a gate electrode, the second electrode is a source electrode, the third electrode is a drain electrode, and the drive terminal is a sense source terminal.

6 . The switching device according to claim 1 , wherein the first electrode is a gate electrode, the second electrode is an emitter electrode, the third electrode is a collector electrode, and the drive terminal is a sense emitter terminal.

7 . The switching device according to claim 1 , wherein the first electrode is a base electrode, the second electrode is an emitter electrode, the third electrode is a collector electrode, and the drive terminal is a sense emitter terminal.

8 . An electronic circuit including: the switching device according to claim 1 ;
an overcurrent detection circuit for detecting that an overcurrent is flowing through the switching device; and an overcurrent protection circuit for blocking the current flowing through the switching device when an overcurrent is detected by the overcurrent detection circuit.

9 . The switching device according to claim 2 , wherein the drive terminal is connected via a second conductive member at a position separated from a connecting point of the first conductive member in the output terminal, and
the short-circuit capacity improving resistance further includes a resistance of a portion between the connecting point of the first conductive member and a connecting point of the second conductive member in the output terminal.

10 . The switching device according to claim 9 , wherein the first conductive member includes a first bonding wire stretched between the output terminal and the second electrode, and
the second conductive member includes a second bonding wire stretched between the output terminal and the drive terminal.

11 . The switching device according to claim 1 , including: a diode element parallelly connected to the switching element; and
a third conductive member electrically connecting the second electrode of the switching element and an anode element of the diode element, wherein the short-circuit capacity improving resistance includes the third conductive member.

12 . The switching device according to claim 11 , wherein the third conductive member is a plate-shaped metal member.

13 . The switching device according to claim 11 , wherein the switching element is a SiC switching element, and the diode element is a SiC diode element.

14 . A semiconductor module, including: a plurality of switching devices that are parallelly connected, wherein
each of the switching devices is the switching device according to claim 11 .

Assignees

• Rohm Co Ltd

Inventors

• Hayashiguchi Masashi
• Ino Kazuhide

Classifications

• H10W72/07653

  changes in shapes · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W72/884

  Die-attach connectors and bond wires · CPC title

• H10W72/886

  Die-attach connectors and strap connectors · CPC title

• H10W72/871

  Bond wires and strap connectors · CPC title