Manufacturable laser diode

Patent metadata

Field	Value
Publication number	US-2016294162-A1
Application number	US-201615176076-A
Country	US
Kind code	A1
Filing date	Jun 7, 2016
Priority date	Feb 10, 2014
Publication date	Oct 6, 2016
Grant date	—

Abstract

A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.

First claim

1 .- 21 . (canceled)

22 . A laser diode device, the laser diode device comprising:
a carrier chip singulated from a carrier substrate; one or more epitaxial material die transferred to the carrier substrate from a substrate, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region; one or more laser diode stripe regions formed in the epitaxial material die;

23 . The device of claim 22 wherein the laser diode device comprise a pair of facets configured from a cleaving process or an etching process, the etching process being selected from inductively coupled plasma etching, chemical assisted ion beam etching, or reactive ion beam etching.

24 . The device of claim 22 wherein the epitaxial material comprises one or more of GaN, AlN, InN, InGaN, AlGaN, InAlN, InAlGaN, or one or more of AlAs, GaAs, GaP, InP, AlP, AlGaAs, AlinAs, InGaAs, AlGaP , AlInP, InGaP, AlInGaP, AlInGaAs, and AlInGaAsP.

25 . The device of claim 22 where the carrier substrate has a thermal conductivity greater than about 150 K/mW.

26 . The device of claim 22 wherein the carrier substrate comprises one or more of silicon carbide, aluminum nitride, beryllium oxide, gold, silver, copper, or graphite, carbon nanotubes or grapheme or composites thereof.

27 . The device of claim 22 wherein the carrier substrate comprises a cost of less than $0.40/cm2.

28 . The device of claim 22 wherein the carrier substrate comprises at least one of single crystalline silicon, polycrystalline silicon, sapphire or polycrystalline aluminum nitride.

29 . The device of claim 22 wherein electrically insulating layers are disposed overlaying the carrier substrate.

30 . The device of claim 22 wherein each of the die comprise one or more components, the one or more components being selected from at least one of an electrical contact, a current spreading region, an optical cladding region, a laser ridge, a laser ridge passivation, or a pair of facets, either alone or in any combination.

31 . The device of claim 22 wherein a bond pad is located on the side of the carrier opposite the bonded epitaxial material; wherein the laser diode device comprises one or more gallium and nitrogen containing violet or blue emitting laser diodes operable at optical output powers above about 1 W; wherein the carrier chip resulting from the carrier substrate has a thermal conductivity of greater than about 150 K/mW and is comprised of one or more of silicon carbide, aluminum nitride, beryllium oxide, gold, silver, copper, or graphite, carbon nanotubes or grapheme or composites thereof; and wherein the optical output is configured to excite a wavelength conversion material such as a phosphor material.

32 . The device of claim 22 wherein the laser diode device is a RGB device comprising one or more gallium and nitrogen containing blue and green emitting laser diodes and one or more gallium and arsenic containing red emitting laser diodes; wherein each of the blue, green, and red emitting laser diodes are operable at powers of less than 100 mW, less than, 50 mW, and less than 10 mW; and wherein the carrier chip resulting from the carrier substrate is comprised of silicon.

33 . The device of claim 22 wherein the carrier chip is configured to bond directly to the package.

34 . An optical apparatus comprising:
an epitaxial growth material bonded to a sub-mount device with an interface region on a surface region of the sub-mount device, the epitaxial growth material being characterized by a thickness of less than 10 microns and greater than 0.5 micron and detached from a substrate that the epitaxial material was grown on; at least one laser device configured from the epitaxial growth material, the one laser device comprising a laser ridge fabricated in the epitaxial growth material; a peripheral region of the sub-mount device configured from a singulated carrier to provide the sub-mount device, the peripheral region being configured from a sawing, scribing and breaking, or cleaving process; and at least a pair of bonding pads configured on the sub-mount device to electrically connect to the laser device and configured to inject current into the laser device.

35 . The apparatus of claim 34 further comprising an application configured with the laser device, the application being selected from a light bulb, a display, or another application.

36 . The apparatus of claim 34 wherein the epitaxial growth material comprises a gallium and nitrogen containing material; wherein the interface region comprises a bonding region of bonding material.

37 . The apparatus of claim 34 wherein the epitaxial growth material, laser device, and submount are configured within a module device.

38 . An optical apparatus, the apparatus comprising:
a common carrier member comprising a surface region; a red emitting AlInGaAsP epitaxial laser structure (RED) configured onto and transferred from a gallium and arsenic containing substrate member onto a first portion of the surface region or a red emitting AlInGaAsP laser epitaxial structure is formed on the surface region of the common carrier member; a green emitting gallium and nitrogen containing laser epitaxial structure (GREEN) configured onto and transferred from a gallium and nitrogen containing substrate member onto a second portion of the surface region; a blue emitting gallium and nitrogen containing laser epitaxial structure (BLUE) configured onto and transferred from a gallium and nitrogen containing substrate member onto a third portion of the surface region; and a red laser device (RED Laser), a green laser device (GREEN Laser), and a blue laser device (BLUE Laser) configured respectively from the RED, GREEN, and BLUE via processing of the RED, GREEN, and BLUE to form waveguide regions, facet regions, and contact regions.

39 . Apparatus of claim 38 further comprising:
a first connect structure processed onto the common carrier member after the configuration of the RED Laser;
a second connect structure processed onto the common carrier member after the configuration and transfer of the GREEN Laser;
a third connect structure processed onto the common carrier member after the configuration and transfer of the BLUE Laser; and
a module housing configured to house the GREEN Laser, BLUE Laser, and RED Laser (collectively “RGB Lasers”).

40 . Apparatus of claim 38 wherein the module housing is configured with a projection display apparatus or laser display.

41 . Apparatus of claim 38 wherein each of the laser devices is within a pitch ranging from 10 to 100 microns.

42 . Apparatus of claim 38 wherein at least the BLUE and GREEN are bonded to the common carrier member using a p-side down configuration, each of the laser devices coupled to each other using a common p-type electrode provided on the common carrier member; and further comprising an electrical passivation material overlying each of the laser devices while exposing regions for separate n-type electrodes.

43 . Apparatus of claim 38 wherein each of the laser devices is configured to reduce laser speckle; and each of the RGB Lasers is individually addressable.

44 . Apparatus of claim 38 where each of the RGB Lasers is coupled to a common optical element.

Assignees

• Soraa Laser Diode Inc

Inventors

• Mclaurin Melvin
• Sztein Alexander
• Hsu Po Shan
• Goutain Eric
• Steigerwald Dan
• Raring James W

Classifications

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W72/5363

  the connected ends being wedge-shaped · CPC title

• H10W72/536

  the connected ends being ball-shaped · CPC title

• H10W72/0198

  batch processes · CPC title

• H10W72/073

  of die-attach connectors · CPC title