Method for manufacturing aluminum plate, aluminum plate, collector for storage device, and storage device

Patent metadata

Field	Value
Publication number	US-2016294002-A1
Application number	US-201615187057-A
Country	US
Kind code	A1
Filing date	Jun 20, 2016
Priority date	Jan 31, 2014
Publication date	Oct 6, 2016
Grant date	—

Abstract

An object of the present invention is to provide a method for manufacturing an aluminum plate which is simple, is high in productiveness, allows the use of arbitrary aluminum materials, and can be suitably used for collectors having excellent adhesiveness to active material layers, a collector for a storage device, and a storage device. The method for manufacturing an aluminum plate of the present invention is a method for manufacturing an aluminum plate having an aluminum substrate having a plurality of through holes in a thickness direction, including an oxidized film-forming step of forming an oxidized film by carrying out an oxidized film-forming treatment on a surface of the aluminum substrate having a thickness in a range of 5 μm to 1,000 μm and a through hole-forming step of forming through holes by carrying out an electrochemical dissolution treatment after the oxidized film-forming step.

First claim

1 . A method for manufacturing an aluminum plate having an aluminum substrate having a plurality of through holes in a thickness direction, comprising:
an oxidized film-forming step of forming an oxidized film by carrying out an oxidized film-forming treatment on a surface of the aluminum substrate having a thickness in a range of 5 μm to 1,000 μm; and a through hole-forming step of forming through holes by carrying out an electrochemical dissolution treatment after the oxidized film-forming step.

2 . The method for forming an aluminum plate according to claim 1 ,
wherein a quantity of electricity (Q) (C/dm 2 ) in the electrochemical dissolution treatment and a total thickness (t) (μm) of the oxidized film and the aluminum substrate during the electrochemical dissolution treatment satisfy Expression (I) below;
5≦ Q/t≦ 300  (I).

3 . The method for forming an aluminum plate according to claim 1 , comprising:
an oxidized film-removing step of removing the oxidized film after the through hole-forming step.

4 . The method for forming an aluminum plate according to claim 1 , comprising:
a roughening treatment step of carrying out an electrochemical roughening treatment on the aluminum substrate that is yet to be subjected to the oxidized film-forming step or the aluminum plate from which the oxidized film after the oxidized film-removing step is removed.

5 . An aluminum plate having an aluminum substrate having a plurality of through holes in a thickness direction,
wherein an average opening diameter of the through holes is in a range of 0.1 μm to 100 μm, and a proportion of through holes having an opening diameter of 5 μm or smaller in the through holes is 50% or lower.

6 . The aluminum plate according to claim 5 ,
wherein a proportion of through holes having an opening diameter of larger than 30 μm in the through holes is 20% or greater.

7 . The aluminum plate according to claim 5 ,
wherein an arithmetic average roughness Ra of a surface is 0.2 μm or greater.

8 . The aluminum plate according to claim 6 ,
wherein an arithmetic average roughness Ra of a surface is 0.2 μm or greater.

9 . The aluminum plate according to claim 5 , comprising:
unpenetrated recessed portions having an average opening diameter in a range of 0.1 μm to 100 μm, wherein an occupancy of the recessed portions is 10% or greater.

10 . The aluminum plate according to claim 6 , comprising:
unpenetrated recessed portions having an average opening diameter in a range of 0.1 μm to 100 μm, wherein an occupancy of the recessed portions is 10% or greater.

11 . The aluminum plate according to claim 7 , comprising:
unpenetrated recessed portions having an average opening diameter in a range of 0.1 μm to 100 μm, wherein an occupancy of the recessed portions is 10% or greater.

12 . The aluminum plate according to claim 8 , comprising:
unpenetrated recessed portions having an average opening diameter in a range of 0.1 μm to 100 μm, wherein an occupancy of the recessed portions is 10% or greater.

13 . The aluminum plate according to claim 5 ,
wherein a specific surface area ΔS of the surface is 5% or larger; here, the specific surface area ΔS refers to a value obtained from Expression (i) below using an actual area S x that is obtained from three-dimensional data, which is obtained by measuring specific surface areas using an atomic force microscope at 512×128 points in a 25 μm×25 μm range on the surface, using a three-point approximation method and a geometric measurement area S 0 :
Δ S =( S x −S 0 )/ S 0 ×100(%)  (i).

14 . The aluminum plate according to claim 6 ,
wherein a specific surface area ΔS of the surface is 5% or larger; here, the specific surface area ΔS refers to a value obtained from Expression (i) below using an actual area S x that is obtained from three-dimensional data, which is obtained by measuring specific surface areas using an atomic force microscope at 512×128 points in a 25 μm×25 μm range on the surface, using a three-point approximation method and a geometric measurement area S 0 :
Δ S =( S x −S 0 )/ S 0 ×100(%)  (i).

15 . The aluminum plate according to claim 7 ,
wherein a specific surface area ΔS of the surface is 5% or larger; here, the specific surface area ΔS refers to a value obtained from Expression (i) below using an actual area S x that is obtained from three-dimensional data, which is obtained by measuring specific surface areas using an atomic force microscope at 512×128 points in a 25 μm×25 μm range on the surface, using a three-point approximation method and a geometric measurement area S 0 :
Δ S =( S x −S 0 )/ S 0 ×100(%)  (i).

16 . The aluminum plate according to claim 9 ,
wherein a specific surface area ΔS of the surface is 5% or larger; here, the specific surface area ΔS refers to a value obtained from Expression (i) below using an actual area S x that is obtained from three-dimensional data, which is obtained by measuring specific surface areas using an atomic force microscope at 512×128 points in a 25 μm×25 μm range on the surface, using a three-point approximation method and a geometric measurement area S 0 :
Δ S =( S x −S 0 )/ S 0 ×100(%)  (i).

17 . A collector for a storage device made of an aluminum plate having an aluminum substrate having a plurality of through holes in a thickness direction,
wherein the aluminum plate is an aluminum plate that is obtained using the method for manufacturing an aluminum plate according to claim 1 .

18 . A storage device comprising:
the collector for a storage device according to claim 17 .

Assignees

• Fujifilm Corp

Inventors

• Matsuura Atsushi
• Kasuya Yuichi
• Kawaguchi Junji
• Hotta Hisashi
• Hotta Yoshinori
• Komatsu Hiroshi
• Sawada Hirokazu

Classifications

• H01G11/84

  Processes for the manufacture of hybrid or EDL capacitors, or components thereof · CPC title

• C25D3/38

  of copper · CPC title

• C25F3/04

  of light metals · CPC title

• H01M4/80

  Porous plates, e.g. sintered carriers · CPC title

• H01G11/70

  characterised by their structure · CPC title